Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The power modules are arranged at positions equally distant from a center of the inverter and equally distant from the smoothing capacitor.

Abstract: A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

Abstract: A power module includes a substrate that is electrically insulative and includes a substrate main surface and a substrate back surface at opposite sides in a thickness direction. The power module also includes a mounting layer that is conductive and arranged on the substrate main surface. The power module further includes a graphite plate having anisotropic thermal conductivity and including a plate main surface and a plate back surface at opposite sides in the thickness direction. The plate back surface is connected to the mounting layer. The power module further includes a power semiconductor element arranged on the plate main surface.

Abstract: In a vehicle drive unit, a motor and an inverter are disposed adjacent in an axial direction of the motor. A smoothing capacitor and each power module are connected by a busbar. Each power module has a flat shape having a wide width, and has a first cooling surface facing the motor. The first cooling surface of each power module is placed on a placement surface orthogonal to the axial direction. The plate-shaped busbar has a second cooling surface facing the motor. The busbar is connected to the smoothing capacitor and each power module, and is formed with a wide width so as to extend along a direction in which each power module is disposed side by side. The second cooling surface is placed on the placement surface. A cooling portion facing the first and second cooling surfaces is provided closer to the motor than the placement surface.

Abstract: A semiconductor device includes a semiconductor element and a first terminal electrically connected to the semiconductor element. The first terminal includes a first portion at least a portion of which extends in a first direction and a second portion extending in the first direction. The second portion overlaps with the first portion as viewed in a second direction orthogonal to the first direction. The first terminal may include a third portion connecting the first portion and the second portion. The third portion may protrude beyond the first portion and the second portion as viewed in the first direction. The second section may be spaced apart from the first section.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor module includes: a plurality of semiconductor devices that each include a signal terminal extending in a first direction, and that is electrically connected to a semiconductor element; a heat sink; a plurality of first wiring boards that are electrically connected to the plurality of signal terminals of the respective semiconductor devices; and a second wiring board electrically connected to the plurality of first wiring boards. The signal terminal of one of the plurality of semiconductor devices is press-fitted into one of the plurality of first wiring boards in the first direction. The semiconductor module further includes a plurality of communication wirings electrically connecting the plurality of first wiring boards and the second wiring board. The plurality of communication wirings are displaceable in a direction perpendicular to the first direction.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: The power conversion device includes a first semiconductor module, a second semiconductor module, a third semiconductor module, and a capacitor module. As viewed in a z direction, the first center line of the first semiconductor module, the second center line of the second semiconductor module, and the third center line of the third semiconductor module intersect the capacitor body. The first angle formed by the first center line and the second center line and the second angle formed by the second center line and the third center line are equal to each other. The lengths of the first busbar, the second busbar and the third busbar are equal to each other.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A semiconductor device includes a semiconductor element, a first terminal, a second terminal, a first conductor, a first connecting member, and a second connecting member. The semiconductor element includes a first electrode, a second electrode, and a third electrode, and is configured to perform on/off control between the first electrode and the second electrode based on a drive signal inputted to the third electrode. The first terminal and the second terminal are separated apart from each other and electrically connected to the first electrode. The first conductor is electrically connected to the first terminal. The first connecting member electrically connects the first electrode and the first conductor. The second connecting member electrically connects the first conductor and the second terminal.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100 ?.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A semiconductor device includes a switching circuit that switches between conducting state and disconnected state. The switching circuit includes first and second switching elements electrically connected in parallel. The first switching element is an IGBT, and the second switching element is a MOSFET. When a current flowing in the switching circuit is less than a first current value, the second switching element has a lower voltage than the first switching element. When the current flowing in the switching circuit is not less than a second current value and not greater than a third current value, the threshold voltage of the second switching element ranges from ?1.0 V to +0.4 V relative to the threshold voltage of the first switching element. The third current value is not greater than the rated current of the switching circuit. The first current value is less than the third current value.

Abstract: A semiconductor device includes a first MOSFET and a first IGBT. A drain of the first MOSFET and a collector of the first IGBT are electrically connected to each other. A source of the first MOSFET and an emitter of the first IGBT are electrically connected to each other. An element withstand voltage of the first MOSFET is larger than an element withstand voltage of the first IGBT.