Abstract: In a drive unit, a motor and an inverter having power modules are disposed adjacent in an axial direction of the motor. In the motor, first and second coil groups, each including one U-phase coil, one V-phase coil, and one W-phase coil, are provided. The power modules constitute first and second power module groups that are connected in parallel. The first and second power module groups each include one U-phase power module, one V-phase power module, and one W-phase power module. A distance between the U-phase power module of the first power module group and the U-phase coil of the first coil group, a distance between the V-phase power module of the first power module group and the V-phase coil of the first coil group, and a distance between the W-phase power module of the first power module group and the W-phase coil of the first coil group are equal.

Abstract: A semiconductor device includes a plurality of semiconductor elements, each of which has a first electrode, a second electrode, and a third electrode, and is subjected to an ON-OFF control between the first electrode and the second electrode in accordance with a driving signal input to the third electrode. Further, the semiconductor device includes a control terminal to which the driving signal is input, a first wiring portion to which the control terminal is connected, a second wiring portion separated from the first wiring portion, a first connection member to conduct the first wiring portion and the second wiring portion, and a second connection member to conduct the second wiring portion and the third electrode of one of the plurality of semiconductor elements. The respective first electrodes of the plurality of semiconductor elements are electrically connected to one another, and respective second electrodes of the plurality of semiconductor elements are electrically connected to one another.

Abstract: A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Abstract: A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor device includes: a plurality of semiconductor elements connected in parallel; a rectifier element connected in anti-parallel to the plurality of semiconductor elements; a power terminal electrically connected to the plurality of semiconductor elements; and an electrical conductor electrically connected to the power terminal and the plurality of semiconductor elements and including a pad portion to which the plurality of semiconductor elements are bonded. The plurality of first semiconductor elements include a first element and a second element. The minimum conduction path of the first element to the power terminal is shorter than the minimum conduction path of the second element to the power terminal. The pad portion includes a first section to which the first element is bonded and a second section to which the second element is bonded. The rectifier element is located in the first section of the pad portion.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The power modules are arranged at positions equally distant from a center of the inverter and equally distant from the smoothing capacitor.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: In a vehicle drive unit, a motor and an inverter are disposed adjacent in an axial direction of the motor. A smoothing capacitor and each power module are connected by a busbar. Each power module has a flat shape having a wide width, and has a first cooling surface facing the motor. The first cooling surface of each power module is placed on a placement surface orthogonal to the axial direction. The plate-shaped busbar has a second cooling surface facing the motor. The busbar is connected to the smoothing capacitor and each power module, and is formed with a wide width so as to extend along a direction in which each power module is disposed side by side. The second cooling surface is placed on the placement surface. A cooling portion facing the first and second cooling surfaces is provided closer to the motor than the placement surface.

Abstract: In a drive unit, a motor and an inverter having power modules are disposed adjacent in an axial direction of the motor. In the motor, first and second coil groups, each including one U-phase coil, one V-phase coil, and one W-phase coil, are provided. The power modules constitute first and second power module groups that are connected in parallel. The first and second power module groups each include one U-phase power module, one V-phase power module, and one W-phase power module. A distance between the U-phase power module of the first power module group and the U-phase coil of the first coil group, a distance between the V-phase power module of the first power module group and the V-phase coil of the first coil group, and a distance between the W-phase power module of the first power module group and the W-phase coil of the first coil group are equal.

Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The plurality of power modules are disposed at the periphery of the smoothing capacitor. The smoothing capacitor and each of the power modules are disposed in an inner portion of the thin case and arranged on the same plane orthogonal to the rotational axis direction. The busbars are formed to extend in the circumferential direction. An inner edge portion of each of the busbars has an arc shape or a circular shape.

Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The unit capacitors are arranged at positions equally distant from a center of the inverter. A distance between each power module and the unit capacitor closest to the power module is constant.

Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules each including a switching element, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The plurality of power modules are disposed at the periphery of the smoothing capacitor and arranged in the circumferential direction. The busbars are formed to extend in the circumferential direction. An inner edge portion of each of the busbars connected to a terminal of the smoothing capacitor has an arc shape or a circular shape.

Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The plurality of power modules is arranged, with respect to the smoothing capacitor, side by side in a direction perpendicular to the axes of the unit capacitors.

Abstract: An inverter is disposed adjacent to a motor. The inverter includes a plurality of power modules, a smoothing capacitor, and busbars connecting the power modules and the smoothing capacitor. The plurality of power modules are disposed to be arranged along the periphery of the smoothing capacitor. The smoothing capacitor is disposed at a central portion of the inverter and also disposed in the inner portion of the inverter such that the smoothing capacitor and each of the power modules are arranged on the same plane.