Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The plurality of power modules is arranged, with respect to the smoothing capacitor, side by side in a direction perpendicular to the axes of the unit capacitors.

Abstract: In an inverter that includes a smoothing capacitor and a plurality of power modules, the smoothing capacitor includes a plurality of columnar unit capacitors each having electrodes at both ends thereof, a one-end-side bus plate connected to the electrode at one end of each unit capacitor, and an other-end-side bus plate connected to the electrode at the other end of the unit capacitor. The unit capacitors are arranged, with axes thereof parallel to each other, side by side in a direction perpendicular to the axes. The unit capacitors are arranged at positions equally distant from a center of the inverter. A distance between each power module and the unit capacitor closest to the power module is constant.

Abstract: An inverter is disposed adjacent to a motor. The inverter includes a plurality of power modules, a smoothing capacitor, and busbars connecting the power modules and the smoothing capacitor. The plurality of power modules are disposed to be arranged along the periphery of the smoothing capacitor. The smoothing capacitor is disposed at a central portion of the inverter and also disposed in the inner portion of the inverter such that the smoothing capacitor and each of the power modules are arranged on the same plane.

Abstract: In a vehicle drive unit, a motor and an inverter are disposed adjacent in an axial direction of the motor. A smoothing capacitor and each power module are connected by a busbar. Each power module has a flat shape having a wide width, and has a first cooling surface facing the motor. The first cooling surface of each power module is placed on a placement surface orthogonal to the axial direction. The plate-shaped busbar has a second cooling surface facing the motor. The busbar is connected to the smoothing capacitor and each power module, and is formed with a wide width so as to extend along a direction in which each power module is disposed side by side. The second cooling surface is placed on the placement surface. A cooling portion facing the first and second cooling surfaces is provided closer to the motor than the placement surface.

Abstract: In a drive unit, a motor and an inverter having power modules are disposed adjacent in an axial direction of the motor. In the motor, first and second coil groups, each including one U-phase coil, one V-phase coil, and one W-phase coil, are provided. The power modules constitute first and second power module groups that are connected in parallel. The first and second power module groups each include one U-phase power module, one V-phase power module, and one W-phase power module. A distance between the U-phase power module of the first power module group and the U-phase coil of the first coil group, a distance between the V-phase power module of the first power module group and the V-phase coil of the first coil group, and a distance between the W-phase power module of the first power module group and the W-phase coil of the first coil group are equal.

Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules each including a switching element, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The switching element is constituted by a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET). The smoothing capacitor and each of the power modules are disposed in an inner portion of the thin case and arranged on the same plane orthogonal to the rotational axis direction.

Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The plurality of power modules are disposed at the periphery of the smoothing capacitor. The smoothing capacitor and each of the power modules are disposed in an inner portion of the thin case and arranged on the same plane orthogonal to the rotational axis direction. The busbars are formed to extend in the circumferential direction. An inner edge portion of each of the busbars has an arc shape or a circular shape.

Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules each including a switching element, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The plurality of power modules are disposed at the periphery of the smoothing capacitor and arranged in the circumferential direction. The busbars are formed to extend in the circumferential direction. An inner edge portion of each of the busbars connected to a terminal of the smoothing capacitor has an arc shape or a circular shape.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A power module includes a substrate that is electrically insulative and includes a substrate main surface and a substrate back surface at opposite sides in a thickness direction. The power module also includes a mounting layer that is conductive and arranged on the substrate main surface. The power module further includes a graphite plate having anisotropic thermal conductivity and including a plate main surface and a plate back surface at opposite sides in the thickness direction. The plate back surface is connected to the mounting layer. The power module further includes a power semiconductor element arranged on the plate main surface.

Abstract: A semiconductor device includes a semiconductor element, a first terminal, a second terminal, a first conductor, a first connecting member, and a second connecting member. The semiconductor element includes a first electrode, a second electrode, and a third electrode, and is configured to perform on/off control between the first electrode and the second electrode based on a drive signal inputted to the third electrode. The first terminal and the second terminal are separated apart from each other and electrically connected to the first electrode. The first conductor is electrically connected to the first terminal. The first connecting member electrically connects the first electrode and the first conductor. The second connecting member electrically connects the first conductor and the second terminal.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

Abstract: A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100?.

Abstract: A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Abstract: The disclosure provides a semiconductor device. The device includes first and second substrates, first mounting layers, second mounting layers, power supply terminals, an output terminal, electroconductive coupling members and switching elements. The first substrate has first obverse and reverse surfaces facing in a thickness direction. The second substrate has a second obverse surface facing as the first obverse surface faces in the thickness direction and a second reverse surface facing away from the second obverse surface. The second substrate is spaced from the first substrate in a first direction crossing the thickness direction. The first mounting layers are electrically conductive and disposed on the first obverse surface. The second mounting layers are electrically conductive and disposed on the second obverse surface. The power supply terminals are electrically connected to the first mounting layers. The output terminal is connected to one of the second mounting layers.