Abstract: An inverter is disposed adjacent to one end of a motor in a rotational axis direction. The inverter includes a plurality of power modules each including a switching element, a smoothing capacitor, busbars that connect the power modules to the smoothing capacitor, and a thin case that accommodates these components. The switching element is constituted by a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET). The smoothing capacitor and each of the power modules are disposed in an inner portion of the thin case and arranged on the same plane orthogonal to the rotational axis direction.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A power module includes a substrate that is electrically insulative and includes a substrate main surface and a substrate back surface at opposite sides in a thickness direction. The power module also includes a mounting layer that is conductive and arranged on the substrate main surface. The power module further includes a graphite plate having anisotropic thermal conductivity and including a plate main surface and a plate back surface at opposite sides in the thickness direction. The plate back surface is connected to the mounting layer. The power module further includes a power semiconductor element arranged on the plate main surface.

Abstract: A semiconductor device includes a semiconductor element, a first terminal, a second terminal, a first conductor, a first connecting member, and a second connecting member. The semiconductor element includes a first electrode, a second electrode, and a third electrode, and is configured to perform on/off control between the first electrode and the second electrode based on a drive signal inputted to the third electrode. The first terminal and the second terminal are separated apart from each other and electrically connected to the first electrode. The first conductor is electrically connected to the first terminal. The first connecting member electrically connects the first electrode and the first conductor. The second connecting member electrically connects the first conductor and the second terminal.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100?.

Abstract: A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Abstract: A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

Abstract: The disclosure provides a semiconductor device. The device includes first and second substrates, first mounting layers, second mounting layers, power supply terminals, an output terminal, electroconductive coupling members and switching elements. The first substrate has first obverse and reverse surfaces facing in a thickness direction. The second substrate has a second obverse surface facing as the first obverse surface faces in the thickness direction and a second reverse surface facing away from the second obverse surface. The second substrate is spaced from the first substrate in a first direction crossing the thickness direction. The first mounting layers are electrically conductive and disposed on the first obverse surface. The second mounting layers are electrically conductive and disposed on the second obverse surface. The power supply terminals are electrically connected to the first mounting layers. The output terminal is connected to one of the second mounting layers.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A first power supply terminal P is provided with an internal wiring connection portion 31A, an upright portion 31B which is joined to the internal wiring connection portion 31A, an inclined portion 31C which is joined to the upright portion 31B and an external wiring connection portion 31D which is joined to the inclined portion 31C. A second power supply terminal N is provided with an internal wiring connection portion 32A, an upright portion 32B which is joined to the internal wiring connection portion 32A, an inclined portion 32C which is joined to the upright portion 32B and an external wiring connection portion 32D which is joined to the inclined portion 32C. The upright portion 31B of the first power supply terminal P and the upright portion 32B of the second power supply terminal N are arranged so as to face each other, with a predetermined interval kept therebetween.

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.