Abstract: Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate.

Abstract: Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.

Abstract: Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a MgxZn1-xO substrate (0?x?1) having such a principal surface that: a projection axis obtained by projecting a normal line to the principal surface onto a plane formed by an a-axis and a c-axis of substrate crystal axes is inclined towards the a-axis by an angle of ?a degrees; a projection axis obtained by projecting the normal line to the principal surface onto a plane formed by an m-axis and the c-axis of the substrate crystal axes is inclined towards the m-axis by an angle of ?m degrees; the angle ?a satisfies 70?{90?(180/?)arctan(tan(??a/180)/tan(??m/180))?110; and the angle ?m?1.

Abstract: Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of MgxZn1-xO (0?x<1) containing a p-type impurity; and which satisfies at least any one of the following conditions when the main surface is observed with an atomic force microscope: the density of observed hexagonal pits is not more than 5×106 pits/cm2; and no depressed portion, which includes multiple microcrystalline protrusions formed in the bottom portion of the depressed portion, is found in the main surface.

Abstract: Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped MgXZn1-XO (0<X<1) crystalline material. The ZnO-based semiconductor is subjected to a photoluminescence measurement performed at an absolute temperature of 12 Kelvin, and thus a spectrum distribution curve is obtained. The ZnO-based semiconductor is formed so that a peak intensity of the distribution curve obtained at 3.3 eV or larger is stronger than a peak intensity of the distribution curve obtained at 2.7 eV or smaller. Consequently, the self-compensation effect can be reduced and the conversion into p-type becomes easier.

Abstract: A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window.

Abstract: Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers 2 to 6 are epitaxially grown on an MgxZn1-xO (0?x<1) substrate 1 having a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrode 8 is formed on the ZnO-based semiconductor layer 5, and an n-electrode 9 is formed on the underside of the MgxZn1-xO substrate 1. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgxZn1-xO substrate 1, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substrate 1 can be improved.

Abstract: Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a MgxZn1-xO substrate (0?x<1). To this end, as a method of treating the substrate, a final treatment to be applied on the crystal growth-side surface of the MgxZn1-xO substrate (0?x<1) is acidic wet etching at pH 3 or lower. Thereby, it is possible to prevent production of a hydroxide of Zn, and to reduce the density of crystal defects in a thin film formed on the ZnO-based substrate.

Abstract: The present invention relates to the crystalline forms of 2-allyl-1-[6-(I-hydroxy-1 methylethyl)pyridin-2-yl]-6-{[4-(4-methylpiperazin-1-yl)phenyl]amino}-1,2-dihydro-3H-pyrazolo[3,4-d]pyrimidin-3-one or a salt thereof, which are useful in the field of treatment of various cancers as a kinase inhibitor, especially as a Weel kinase inhibitor.

Abstract: To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode 2 is formed on a ZnO-based semiconductor 1, and an Au film 3 is formed on the organic electrode 2. An electrode formed of a multilayer metal film including a Ti film 4 and an Au film 5 is formed on the back surface of the ZnO-based semiconductor 1 so as to be opposed to the organic electrode 2. A bonding interface between the organic electrode 2 and the ZnO-based semiconductor 1 is in a pn junction-like state. Thus, rectification occurs therebetween.

Abstract: Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film (2), as shown in FIG. 1(b), doped oxide layers (2a) doped with an n-type (electron-conductivity type) impurity and undoped oxide layers (2b) not doped with an n-type impurity are laminated in an alternating and repeated manner. When an oxide layer is doped with the n-type impurity at a high concentration, roughness of a surface of the oxide layer becomes large. For this reason, the doped oxide layers (2a) are covered with the undoped oxide layers (2b) capable of ensuring surface flatness, before surface roughness attributable to the doped oxide layers (2a) becomes very large. Thus, a flat oxide thin film can be formed.

Abstract: A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

Abstract: Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil (4) is wound around an outer side of a discharging tube (10), and a terminal of the high-frequency coil (4) is connected to a high-frequency power source (9). The discharging tube (10) is constituted by a discharging cylinder (1), a lid (2) and a gas introducing bottom plate (3). Additionally, a support base (8) is provided, a support post (6) is arranged on the support base (8), and a shutter (5) is connected to the support post (6). With respect to shaded components, that is, the shutter (5), the lid (2), the discharging cylinder (1) and the gas introducing bottom plate (3), an entirety or a part thereof is formed of a silicon-based compound such as quartz.

Abstract: To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO3/SrTiO3/LaMnO3 is arranged between a ferromagnetic metal material La0.6Sr0.4MnO3 (12) and a ferromagnetic metal film material La0.6Sr0.4MnO3 (14). The tunneling film comprises two unit layers of LaMnO3 (13A) arranged on the ferromagnetic metal material La0.6Sr0.4MnO3 (12); five unit layers of SrTiO3 (13B); and two unit layers of LaMnO3 (13C) arranged at the interface between the SrTiO3 (13B) and the ferromagnetic metal film material La0.6Sr0.4MnO3 (14).

Abstract: A nonvolatile memory element in which Rb1-yMbyMnO3 having higher insulation properties than Ra1-xMaxMnO3 is inserted between the Ra1-xMaxMnO3 and a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0<x, y<1).

Abstract: Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers 2 to 6 are epitaxially grown on an MgxZn1-xO (0?x?1) substrate 1 having a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrode 8 is formed on the ZnO-based semiconductor layer 5, and an n-electrode 9 is formed on the underside of the MgxZn1-xO substrate 1. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgxZn1-xO substrate 1, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substrate 1 can be improved.

Abstract: Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector.

Abstract: The high quality magnetoresistance effect element is capable of reducing resistance in the perpendicular-plane direction and preventing performance deterioration of a barrier layer. The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer being provided between the free layer and the pinned magnetic layer, and the barrier layer is composed of a semiconductor.

Abstract: A nonvolatile memory element in which Rb1-yMbyMnO3 having higher insulation properties than Ra1-xMaxMnO3 is inserted between the Ra1-xMaxMnO3 and a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0<x, y<1).

Abstract: Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.