Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO4 or the like can be used for the substrate 16.

Abstract: A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

Abstract: The present invention provides a magnetic sensor capable of reproducing a magnetic record even if the size of a recorded magnetization is a minute one, directly reading a magnetization recorded on a magneto-optical disk without applying incident light itself to the magneto-optical disk, and obtaining signals of a second harmonic having a high S/N ratio. This magnetic sensor includes a magnetic sensor element (102) having electric polarization disposed with respect to a perpendicular recording medium (101), and laser generating means acting on the magnetic sensor element (102). The magnetic sensor reads information in the perpendicular recording medium (101) based on the variation of the rotation angle ? of the polarization plane of a second harmonic (105) of a frequency 2? exiting the magnetic sensor element (102) by the application of laser light (104) with a frequency ? from the laser generation means to the magnetic sensor element (102).

Abstract: Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transition between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200° C. or lower. The quatum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein R=Sc or In, M=Fe, Cr, Ga or Al, A=Zn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and m=a natural number; or (Li, Na)(Ga, Al)O2.

Abstract: A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1-xTiO3 (where 0<x<1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations (4) introduced therein and the second epitaxial thin film (6) has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material.

Abstract: A process for preparing indolopyrrolocarbazole derivatives [I] by trating a compound [V] with a base in an inert solvent to prepare a compound [IV], reacting the compound [IV] with a compound [III]to prepare a compound [II], and deblocking the compound [II]; intermediates [II], [III] and [IV]; and a process for preparing compounds [III]: [wherein Y1 is hydrogen, C1-4 alkyl, phenyl, benzyloxymethyl, or aralkyl; R1, R2, R3, R4, R5, and R6 are each independently a hydroxyl-protecting group; R7 and R8 are each independently hydrogen or a hydroxyl-protecting group; and X is an acid molecule]. The above process is a safe and easy industrial process for preparing indolopyrrolocarbazole derivatives [1] useful as antitumor agents.

Abstract: Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transitions between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200° C. or lower. The quantum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein R=Sc or In, M=In, Fe, Cr, Ga or Al, A=Zn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and m=a natural number; or (Li, Na)(Ga, Al)O2.

Abstract: The present invention relates to a novel process to make indolocarbazole glycosides in high purity which inhibit the growth of tumor cells and are therefore useful in the treatment of cancer in mammals, and the like.

Abstract: A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

Abstract: The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

Abstract: A high-energy electron diffraction apparatus in which its electron beam source includes a field emission type electron emitter and a final lens stop or diaphragm is disposed between an objective lens and a specimen. A region of environment of the electron beam that extends from the electron beam source to an objective lens stop or diaphragm is held to a high vacuum, and a region of environment of the electron beam that extends from the objective lens stop or diaphragm to the final lens stop or diaphragm is held to a medium vacuum. A beam axial alignment electrode assembly is disposed between the objective lens stop or diaphragm and the final lens stop or diaphragm. There are also disposed an astigmatic correction electrode assembly and a scan deflection electrode assembly between the final lens stop or diaphragm and the specimen. A screen is spaced away from the specimen at a distance of 50 mm or less.

Abstract: A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.

Abstract: In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer.

Abstract: The present invention relates to a novel process to make indolocarbazole glycosides in high purity which inhibit the growth of tumor cells and are therefore useful in the treatment of cancer in mammals, and the like.

Abstract: This invention relates to a process for preparation of an indolopyrrolocarbazole derivative [I] by treating a compound [V] with a base in an inert solvent to prepare a compound [IV], reacting the obtained compound [IV] with a compound [III] to prepare a compound [II] and then removing the protective groups of the compound [II], the preparation intermediates compound [II], compound [III] and compound [IV], and processes for preparation of the compound [III].

Abstract: In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer.

Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1 a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

Abstract: The present invention relates to a novel process to make indolocarbazole glycosides in high purity which inhibit the growth of tumor cells and are therefore useful in the treatment of cancer in mammals, and the like.