Abstract: Provided are an electromagnetic wave control element including a first patterned conductive layer, an insulating layer, and a layer containing a material of which conductivity changes with a voltage, and a manufacturing method of an electromagnetic wave control element.

Abstract: The invention provides a method for combusting of a hybrid rocket fuel, comprising supplying aqueous solution of hydrogen peroxide to a combustion chamber provided with a solid fuel, wherein a concentration of hydrogen peroxide in the aqueous solution of hydrogen peroxide is less than 65% by weight, and the method for combusting comprises at least one of: (i) supplying oxygen and the aqueous solution of hydrogen peroxide to the combustion chamber, and (ii) heating the aqueous solution of hydrogen peroxide before supplying the aqueous solution of hydrogen peroxide to the combustion chamber.

Abstract: There is provided a semiconductor film containing an aggregate of semiconductor quantum dots that contain an In element and a Group 15 element and a ligand that is coordinated to the semiconductor quantum dot, in which the Group 15 element includes an Sb element, and the ligand includes an inorganic ligand containing a halogen element. There are also provided a photodetection element, an image sensor, a dispersion liquid, and a manufacturing method for a semiconductor film.

Abstract: There is provided a semiconductor film containing an aggregate of semiconductor quantum dots that contain an In element and a Group 15 element and a ligand that is coordinated to the semiconductor quantum dot, in which the Group 15 element includes an Sb element, and a ratio of the number of the In elements to the number of the Group 15 elements in the semiconductor quantum dot is 1.1 or more. There are also provided a photodetection element, an image sensor, and a manufacturing method for a semiconductor quantum dot.

Abstract: A plug includes a plug body, a spiral gas flow path that is provided in the plug body and that extends from a lower surface of the plug body to an upper surface, and at least one branch path that branches from a position on the spiral gas flow path and that opens on an outer circumferential surface of the plug body or that is in communication with another spiral gas flow path that differs from the spiral gas flow path and that extends from a lower surface of the plug body to an upper surface.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface that includes a wafer placement portion, and a plug that is installed in a plug installation hole extending through the ceramic plate in an up-down direction and that allows gas to pass therethrough, wherein the plug has a gas flow path that includes a plurality of linear flow paths that is combined such that the plurality of linear flow paths intersects with each other in a plug body, and wherein the gas flow path includes a plurality of opening portions in an upper surface and a lower surface of the plug body.

Abstract: Provided are an optical modulation element including a substrate 11; an electrode layer 12 provided on the substrate 11; a dielectric layer 13 provided on the electrode layer 12; and a light absorbing layer 14 provided on the dielectric layer 13 and including inorganic nanoparticles, in which the inorganic nanoparticles exhibit localized surface plasmon resonance by light irradiation, an optical shutter including the optical modulation element, and an optical modulation method including dynamically modulating reflected light or transmitted light of light incident into the optical modulation element by changing a voltage to be applied to the light absorbing layer of the optical modulation element.

Abstract: An internal-combustion engine includes a variable compression ratio mechanism for changing a mechanical compression ratio, and a variable valve timing mechanism for changing the valve timing of an intake valve. When acceleration is demanded, a target compression ratio is set to a lower compression ratio than the target value in a normal condition, and the valve timing is set to the advance angle side. Since the allowable combustion pressure decreases in a prescribed intermediate compression ratio region, if an actual compression ratio exists in the prescribed intermediate compression ratio region in the course of a compression ratio change accompanying acceleration, the variable compression ratio mechanism restricts the intake pressure by increasing a degree of opening of a wastegate valve or reducing a degree of opening of a throttle valve, for example.

Abstract: An object of the present invention is to provide a cured product which is suitable as a material for a layer of low refractive index in a multilayer diffractive optical element, can exhibit a desired chromatic aberration reducing effect over a near-infrared wavelength region to a shortwave infrared wavelength region in a case of being used in the multilayer diffractive optical element, and can exhibit high transmittance in this wavelength range; a curable resin composition suitable for obtaining this cured product; and a diffractive optical element and a multilayer diffractive optical element including this cured product. Provided are a curable resin composition which includes oxide nanoparticles including indium and cerium, a monofunctional or higher functional (meth)acrylate compound, and a dispersant; a cured product formed of the curable resin composition; a diffractive optical element and a multilayer diffractive optical element; and oxide nanoparticles used in this composition.

Abstract: There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

Abstract: There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.

Abstract: Provided is a curable composition including oxide particles that include at least indium and tin, and to which a ligand having a hydrocarbon group and a binding site to the oxide particles is bonded; and a polymerizable compound, in which a content of the oxide particles in the composition is 18 mass % or more with respect to a total solid content of the composition; and a cured product of the curable composition or a lens unit including the cured product.

Abstract: Provided are semiconductor particles including a Group 12-16 semiconductor including a Group 12 element and a Group 16 element, a Group 13-15 semiconductor including a Group 13 element and a Group 15 element, or a Group 14 semiconductor including a Group 14 element, the semiconductor particles having a plasma frequency of 1.7×1014 rad/s to 4.7×1014 rad/s and a maximum length of 1 nm to 2,000 nm; and a dispersion, a film, an optical filter, a building member, or a radiant cooling device, in all of which the semiconductor particles are used.

Abstract: There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

Abstract: There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

Abstract: There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

Abstract: There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

Abstract: Provide are a curable resin composition containing ITO particles, in which a cured product obtained from the curable resin composition can exhibit high transmittance over a visible light to shortwave infrared wavelength region while maintaining a wavelength dependence of a desired refractive index; a cured product formed of the curable resin composition; and a diffractive optical element and a multilayer diffractive optical element. A curable resin composition includes particles which have a core-shell structure, in which a core portion is composed of indium tin oxide, a monofunctional or higher (meth)acrylate compound, and a dispersant; a cured product formed of the curable resin composition; and a diffractive optical element and a multilayer diffractive optical element.

Abstract: A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.

Abstract: A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.