Abstract: A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

Abstract: A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; a thiocyanate ion coordinated to the semiconductor quantum dots; and a metal ion.

Abstract: A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), X1 represents —SH, —NH2, or —OH; and each of A1 and B1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A1 and B1 are both hydrogen atoms, X1 represents —SH or —OH; in Formula (B), X2 represents —SH, —NH2, or —OH; and each of A2 and B2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

Abstract: The single-phase induction motor includes a stator fixed in a cylindrical frame by shrink-fitting or press-fitting, a main winding wire and an auxiliary winding wire provided on the stator, and a rotor provided on an inner circumferential side of the stator, in which an arc-shaped arc portion and a linear cutout portion are formed on an outer circumference of the stator, the arc portion is arranged on the outer circumference of the stator in a direction of the main winding wire magnetic pole with respect to the center of the stator, and a relief portion for reducing a contact area between the arc portion and an inner circumferential surface of the frame is formed on the arc portion.

Abstract: A vehicle control device that sets a target drive force based on a vehicle speed and an accelerator opening degree, in which if a running mode is switched from a normal mode to an acceleration requirement mode, the target drive force is set based on the accelerator opening degree and the vehicle speed at the time of mode switching.

Abstract: A vehicle control device includes a target drive force setting unit configured to set a target drive force based on an operating state, a target speed ratio setting unit configured to set a target speed ratio of a continuously variable transmission to achieve the target drive force and a target torque setting unit configured to set a target torque of a drive source to achieve the target drive force. The target drive force setting unit is configured to set a target drive force reduced in a stepwise manner at the time of upshifting in the continuously variable transmission.

Abstract: A vehicle control device for controlling a vehicle with an engine includes a target engine output calculation unit configured to calculate a target engine output based on a target drive force, a vehicle speed and an air density, and a target engine torque calculation unit configured to calculate a target engine torque based on the target engine output and the air density. The target engine output calculation unit is configured to set a smaller target engine output when the air density is low than when the air density is high, and the target engine torque calculation unit is configured to set a larger target engine torque when the air density is low than when the air density is high.

Abstract: A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: An internal combustion engine 1 at a standstill of a vehicle after cold starting can switch its combustion mode to a homogenous combustion mode or a stratified combustion mode. An operation range of the stratified combustion at the standstill of the vehicle after cold starting is expanded relative to an operation range of the homogenous combustion at the standstill of the vehicle after cold starting as an inclination of the vehicle decreases. With this technique, the operation range of the stratified combustion can be expanded while assuring an intake air negative pressure required for achieving the brake performance, so that HC reduction at the standstill of the vehicle after cold starting is obtained.

Abstract: A motorcycle includes an exhaust chamber (82), having defined therein a chamber expansion compartment (90) for exhaust gases, and a muffler (84) having defined therein muffler expansion compartments (92, 94, 96) for the exhaust gases on a downstream side of the exhaust chamber (82). Respective outer peripheral walls of the exhaust chamber (82) and the muffler (84) are formed by a common casing (69). The exhaust chamber (82) is positioned intermediate between a motorcycle combustion engine (E) and a motorcycle rear wheel (22). The exhaust chamber (82) has an inner side surface positioned laterally inwardly of an outer side surface (22a) of the rear wheel (22) in a motorcycle body widthwise direction, and the muffler (84) has a rear portion positioned laterally outwardly of the rear wheel (22).

Abstract: A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a) Ga(b) Zn(c) O(d), wherein 0<a?37/60, 3a/7?3/14?b?91a/74?17/40, b>0, 0<c<3/5, a+b+c=1, and d>0, and a second region represented by In(p) Ga(q) Zn(r) O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween; and a source electrode and a drain electrode which are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

Abstract: An exhaust chamber (34) for a motorcycle is disposed at a location upstream of a muffler (36) of an exhaust passage (38) leading from a combustion engine (E). The exhaust chamber (34) includes a chamber body (40) having expansion compartments (41, 42, 43) defined therein, a chamber outlet pipe (46) having an outlet passage defined therein for discharging the exhaust gases (G) from the chamber body (40), and an exhaust control valve (72) disposed in the chamber outlet pipe (46) for adjusting the sectional area of the outlet passage inside the chamber outlet pipe (46).

Abstract: An extruder comprises an extruding section, a chamber drum, and a forming section. The extruding section kneads and extrudes a kneaded material including a ceramic raw material. The chamber drum includes a first space portion which extends from the extrusion port side of the extruding section in an extruding direction and allows the kneaded material to flow in the extruding direction, and a second space portion which extends from a downstream side of the first space portion in a downward direction, allows the kneaded material to flow in the downward direction different from the extruding direction, and has a discharge port to discharge the kneaded material. The forming section includes a die through which the kneaded material discharged through the discharge port of the chamber drum is pushed out, to extrude and form ceramic formed bodies.

Abstract: Antifouling coating compositions that do not substantially contain cuprous oxide and organotins, and that comprise: A) a metal-containing copolymer obtained by copolymerization of a polymerizable unsaturated monomer (a1) containing a metal and an unsaturated monomer (a2) capable of radical polymerization containing no metals; (B) 4,5-dichloro-2-n-octyl-4-isothiazolin-3-one; and (C) a metal pyrithione compound.

Abstract: An object is to provide a vent plug having a structure in which an air-permeable membrane is unlikely to be damaged. More specifically, a vent plug is produced, which includes: a cylindrical member 1 having a through-hole 1a; a support 2 connected to the cylindrical member 1 so as to be across the through-hole 1a; and an air-permeable membrane 3 circumferentially attached to the cylindrical member 1, wherein the air-permeable membrane 3 is held on the support 2 and a convex portion 3a that follows the shape of the support 2 is formed on the air-permeable membrane 3.

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10?6×T3?0.0092×T2+3.6×T?468±0.1 is satisfied.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

Abstract: A motorcycle includes an exhaust chamber (82), having defined therein a chamber expansion compartment (90) for exhaust gases, and a muffler (84) having defined therein muffler expansion compartments (92, 94, 96) for the exhaust gases on a downstream side of the exhaust chamber (82). Respective outer peripheral walls of the exhaust chamber (82) and the muffler (84) are formed by a common casing (69). The exhaust chamber (82) is positioned intermediate between a motorcycle combustion engine (E) and a motorcycle rear wheel (22). The exhaust chamber (82) has an inner side surface positioned laterally inwardly of an outer side surface (22a) of the rear wheel (22) in a motorcycle body widthwise direction, and the muffler (84) has a rear portion positioned laterally outwardly of the rear wheel (22).