Patents by Inventor Masashi Sahara

Masashi Sahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
    Patent number: 6268658
    Abstract: A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: July 31, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shinji Nishihara, Shuji Ikeda, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Atushi Ogishima, Hiroyuki Uchiyama, Sonoko Abe
  • Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
    Patent number: 6031288
    Abstract: A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
    Type: Grant
    Filed: November 12, 1996
    Date of Patent: February 29, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shinji Nishihara, Shuji Ikeda, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Atushi Ogishima, Hiroyuki Uchiyama, Sonoko Abe
  • Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
    Patent number: 5904556
    Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
    Type: Grant
    Filed: January 11, 1996
    Date of Patent: May 18, 1999
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System, Ltd.
    Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura