Abstract: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.

Abstract: A membrane electrode assembly includes an MEA structure unit and a resin frame member. The MEA structure unit includes a cathode, an anode, and a solid polymer electrolyte membrane interposed between the cathode and the anode. The resin frame member is formed around the MEA structure unit, and joined to the MEA structure unit. An adhesive layer is provided between an outer marginal portion of the solid polymer electrolyte membrane extending outward beyond an outer end of a second gas diffusion layer and an inner extension of the resin frame member. The adhesive layer includes an overlapped portion overlapped on an outer marginal end of the second gas diffusion layer.

Abstract: A solid polymer electrolyte membrane is made from a solid polymer electrolyte membrane roll in which a solid polymer electrolyte membrane sheet is wound in a winding direction. A first electrode is disposed on a first surface of the solid polymer electrolyte membrane in a stacking direction. A second electrode is disposed on a second surface of the solid polymer electrolyte membrane in the stacking direction and has a size smaller than a size of the first electrode viewed in the stacking direction. A resin frame member has a rectangular peripheral shape and a rectangular window therein viewed in the stacking direction. The rectangular stepped membrane electrode assembly is provided in the rectangular window so that the outer peripheral surface of the solid polymer electrolyte membrane is surrounded by the resin frame member. The rectangular peripheral shape has a longitudinal side which extends in the winding direction.

Abstract: A resin frame equipped membrane electrode assembly includes an MEA having different sizes of components and a resin frame member. A clearance is formed between an outer end of a second gas diffusion layer and an inner expansion. The second electrode layer has a frame shaped outer marginal portion provided at the clearance. The crack density of cracks of the frame shaped outer marginal portion is 30 cracks/mm2 or less, and the interval between the cracks is 0.06 mm or more.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: A resin frame equipped membrane electrode assembly includes a membrane electrode assembly and a resin frame member. The membrane electrode assembly includes an anode, a cathode, and a solid polymer electrolyte membrane interposed between the anode and the cathode. The resin frame member is provided around the solid polymer electrolyte membrane. The resin frame member includes an inner extension protruding toward the outer periphery of the cathode to contact the outer end of the solid polymer electrolyte membrane. The inner extension of the resin frame member includes a plurality of columnar projections formed integrally with an adhesive surface where an adhesive layer is provided.

Abstract: The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Abstract: A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Abstract: A resin-framed membrane electrode assembly for a fuel cell includes a stepped membrane electrode assembly and a resin frame member. The stepped membrane electrode assembly includes a solid polymer electrolyte membrane, an anode electrode, and a cathode electrode. The resin frame member surrounds an outer periphery of the solid polymer electrolyte membrane and includes an inner protruding portion that protrudes from an inner peripheral base portion toward the cathode electrode and that has a thickness. The inner protruding portion has an adhesive application portion to which an adhesive is applied so as to surround a part of the inner protruding portion. The part is in contact with the stepped membrane electrode assembly. A thickness of a cathode diffusion layer is larger than a thickness of an anode diffusion layer.

Abstract: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.

Abstract: An electrolyte membrane-electrode structure with a resin frame is provided with: an electrolyte membrane-electrode structure that is provided with an anode-side electrode and a cathode-side electrode, with a solid polymer electrolyte membrane being held therebetween; and a resin frame member that is arranged around the outer periphery of the solid polymer electrolyte membrane. An intermediate layer is continuously arranged: between an outer peripheral end portion of the cathode-side electrode and a first inner peripheral end portion of the resin frame member; on an outer peripheral end portion of the solid polymer electrolyte membrane, said outer peripheral end portion being exposed outside the outer peripheral end portion of the cathode-side electrode; and between an outer peripheral end portion of the anode-side electrode and a second inner peripheral end portion of the resin frame member.

Abstract: An electrolyte membrane-electrode assembly is provided with: a solid polymer electrolyte membrane; and an anode-side electrode and a cathode-side electrode that sandwich the solid polymer electrolyte membrane. The cathode-side electrode has smaller planar dimensions than the anode-side electrode. In the electrolyte membrane-electrode assembly, a resin frame member is provided around the outer periphery of the solid polymer electrolyte membrane. The resin frame member is bonded to the cathode-side electrode by having only the outer peripheral portion of the cathode-side electrode being impregnated with the inner peripheral portion of the resin frame member.

Abstract: A membrane electrode assembly includes an MEA structure unit and a resin frame member. The MEA structure unit includes a cathode, an anode, and a solid polymer electrolyte membrane interposed between the cathode and the anode. The resin frame member is formed around the MEA structure unit, and joined to the MEA structure unit. An adhesive layer is provided between an outer marginal portion of the solid polymer electrolyte membrane extending outward beyond an outer end of a second gas diffusion layer and an inner extension of the resin frame member. The adhesive layer includes an overlapped portion overlapped on an outer marginal end of the second gas diffusion layer.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: A temperature adjustment method is provided to improve operating efficiency and reduce costs. Control of a heating unit in a thermal processing system including a heating control section is performed based on a first output control pattern obtained by subjecting a detection temperature provided by a first temperature detecting unit to an integral operation, a differential operation, and a proportional operation under a condition of a first set of temperature-setting conditions, a second output control pattern obtained by determining a first heat quantity in a period from the start of an increase in temperature detected by a second temperature detecting unit until the temperature inside the processing chamber reaches a maximum temperature, and using a second heat quantity obtained by subtracting the part of the output provided by the proportional operation from the first heat quantity.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: There are provided a heat treatment apparatus and a method of processing a substrate, which can control uniformity in thickness of a film formed on a substrate.

Abstract: A semiconductor manufacturing method includes a determination of, when the heater is controlled using a first output control pattern, an output amount by differential operation, and an output amount by a proportional operation such that a temperature detected by the first thermometer becomes a target temperature from a temperature at a ramp-up start time, patterning a part of an operation amount of the heater by using a first heat amount to determine a second output control pattern, the second heat amount being determined based on a temperature detected by the second thermometer and being defined at a period from the ramp-up start time to a time of maximum temperature, the operation amount of the heater being defined at the period, and a processing of the substrate while controlling the heater by using the second output control pattern.

Abstract: A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.