Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: A semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer is provided. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

Abstract: Provided is a mounting method making it possible to, when an object such as an element, or more particularly, a microscopic object is mounted on a substrate, achieve mounting readily and reliably with high positional precision by: forming an element holding layer 12, which is made of a material whose viscosity can be controlled, on a substrate 11; controlling the viscosity of a first part 12a of the element holding layer 12, which includes a mounting region for an element, into a viscosity making the element naturally movable, and controlling the viscosity of a second part 12b of the element holding layer 12 outside the first part 12a into a viscosity making the element naturally immovable; and after mounting one element 13 in the first part 12a, controlling the viscosity of the first part 12a into the viscosity making the element 13 naturally immovable.

Abstract: A method for manufacturing a light-emitting diode display is provided. The method includes pre-fixing first, second, and third light-emitting diodes on a light emitting unit production substrate to produce light-emitting units each including first, second, and third light-emitting diodes, first electrodes of the first, second, and third light-emitting diodes being connected to a sub-common electrode. The method also includes transferring and fixing the light-emitting units from the light-emitting unit production substrate to a display substrate to produce a light-emitting diode display including the light-emitting units which are arranged in a first direction and a second direction perpendicular to the first direction (i.e., arranged in a two-dimensional matrix).

Abstract: A light emitting diode is provided. The light emitting diode includes a semiconductor layer that forms a light emitting diode structure and has a major face and an end face inclined at an angle ?1 to the major face, and a reflector that is provided outside the end face with being opposed to the end face, and includes at least a portion inclined at an angle ?2 to the major face, the angle ?2 being smaller than the angle ?1.

Abstract: A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on the first substrate makes contact with the second substrate side in parallel to the second substrate, a movable stage for supporting and moving the swinging unit, a sensor unit for sensing the condition where the device on the first substrate has made contact with the second substrate side, the sensor unit being provided between the first substrate support portion and a sensor support portion formed in the swinging unit, and a measuring unit 61 for measuring the position of stop of a motion of the first substrate due to the contact of the first substrate with the second substrate, and for measuring the moving amount of the swinging unit after the approaching motion of the first substrate is stopped.

Abstract: A display apparatus is provided. In the display apparatus, a plurality of light emitting devices are mounted in an orderly arranged state, mending light emitting devices capable of light emission are disposed directly above the failed ones of the plurality of light emitting devices, whereby the portions of the failed ones of the plurality of light emitting devices can be mended (repaired), and it is possible to eliminate dark spot defects in use of the display apparatus.

Abstract: An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

Abstract: Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.

Abstract: A display device for displaying an image using matrix driving includes: an emission element corresponding to each pixel to be displayed, disposed on L lines, with the scanning direction as lines; a display portion whereby the M lines worth of the emission elements are simultaneously driven; and a connection unit for connecting an on-substrate wiring line extracted from the emission element of the display portion externally; with the connection units including connection terminals for connecting each of the on-substrate wiring lines externally, and at least a part of the connection terminals being arrayed two-dimensionally so as to make up M columns; and with each of the M columns worth of the connection terminals being connected with the on-substrate wiring lines which are thinned out (M?1) wiring lines at a time.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

Abstract: A method of forming a wiring of a light emitting device having an electrode on a light emission surface is disclosed. The method includes: forming the electrode nearly in a linear shape in which the width is narrower than the light emission surface; and forming a wiring that is connected to the electrode nearly in a linear shape in which the width is narrower than the light emission surface to cross the electrode.

Abstract: There is obtained a semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: A device transfer method and a display apparatus are provided. A device transfer method and a display apparatus are provided by or in which, in transferring devices arranged on a substrate onto another substrate, it is possible to easily strip the substrate after the transfer of the devices, to lower the possibility of damaging of the substrate, and to additionally transfer devices onto the same substrate after the transfer of the devices. A plurality of devices arranged on a temporary holding substrate are embedded into and held in a pressure sensitive adhesive layer formed on a transfer substrate, and the devices are stripped from the temporary holding substrate. Other devices are further additionally embedded into the pressure sensitive adhesive layer before hardening the pressure sensitive adhesive layer, whereby the devices can be arranged on a transfer substrate having a large area.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is connected directly to light output surfaces so as to cover the whole areas of the light output surfaces. The transparent electrode is formed to be larger in area than the light output surfaces, and are securely electrically connected to n-type semiconductor layers including the light output surfaces.

Abstract: Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is connected directly to light output surfaces so as to cover the whole areas of the light output surfaces. The transparent electrode is formed to be larger in area than the light output surfaces, and are securely electrically connected to n-type semiconductor layers including the light output surfaces.