Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract: A chip resistor includes: an insulating chip substrate 11 having an upper surface formed with a resistive film 12 and a pair of left and right upper electrodes 13 at two ends thereof; a cover coat 14 covering the resistive film; auxiliary upper electrodes 15 formed on upper surfaces of the upper electrodes 13 to overlap the cover coat 14; a left and a right side electrodes 16 formed on a left and a right end surfaces 11a of the insulating substrate 11; and metal plate layers formed on surfaces of the auxiliary upper electrodes and side electrodes. The cover coat 14 is formed with an uppermost over coat 19 covering a region where the auxiliary upper electrodes 15 overlap the cover coat 14, whereby the upper electrodes 13 and the auxiliary upper electrodes 15 are protected from migration caused by sulfur gases.

Abstract: A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In this device, a back plane of the crystal growth layer has irregularities. Since light generated in the device is prevented from being totally reflected from the back plane of the crystal growth layer, the light emergence efficiency of the device can be increased.

Abstract: A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another.

Abstract: A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

Abstract: An apparatus for making a color proof based on an image signal including yellow, magenta, cyan and black component data Y, M, C, K for each pixel, comprises; an image signal input section to receive the image signal; a black component correcting section to correct the black component data K on the basis of the yellow, magenta and cyan component data Y, M, C for each pixel in accordance with a predetermined black component correcting condition; an image signal output section to output an image signal including yellow, magenta, cyan and corrected-black component data Y, M, C, K?; and a color proof making section to expose a silver halide light sensitive material based on the outputted image signal with a plurality of light sources different in wavelength and to make a color proof sheet for each color of yellow, magenta, cyan and black.

Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.

Abstract: Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

Abstract: Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

Abstract: There is described an image-forming apparatus, which can prevent unevenness of an image by controlling the brightness of light-sources. The apparatus includes a light source, including a plurality of light-emitting elements aligned within a predetermined width; an exposure-controlling section to individually control each of intensities of light beams emitted by the plurality of light-emitting elements; and a memory section to store light-intensity compensation data for each of the plurality of light-emitting elements. The image is formed by simultaneously exposing the light beams aligned within the predetermined width onto the photosensitive recording medium, and the exposure-controlling section controls each of the plurality of light-emitting elements based on the light-intensity compensation data concerned, so that each of intensities of the light beams substantially coincides with each of target intensities set in advance.

Abstract: Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract: A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.

Abstract: A chip resistor includes an insulating chip substrate, a resistor film formed on the substrate, a pair of upper electrodes formed from silver paste to be connected to the resistor film, a cover coat covering the resistor film, an auxiliary electrode formed on each of the upper electrodes to partially overlap the cover coat, a side electrode formed on each of the side surfaces of the substrate to be connected to the upper electrode and the auxiliary electrode, a nickel-plated layer covering the auxiliary electrode and the side electrode, and a soldering layer covering the nickel-plated layer. The side electrode is made from nonmagnetic conductive resin paste, whereas the auxiliary upper electrode is made from carbon-based conductive resin paste.

Abstract: A device transfer method and a display apparatus are provided. A device transfer method and a display apparatus are provided by or in which, in transferring devices arranged on a substrate onto another substrate, it is possible to easily strip the substrate after the transfer of the devices, to lower the possibility of damaging of the substrate, and to additionally transfer devices onto the same substrate after the transfer of the devices. A plurality of devices arranged on a temporary holding substrate are embedded into and held in a pressure sensitive adhesive layer formed on a transfer substrate, and the devices are stripped from the temporary holding substrate. Other devices are further additionally embedded into the pressure sensitive adhesive layer before hardening the pressure sensitive adhesive layer, whereby the devices can be arranged on a transfer substrate having a large area.

Abstract: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device.

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.