Patents by Inventor Masato Doi

Masato Doi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Display system and method of producing the same
    Publication number: 20050174023
    Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 11, 2005
    Inventors: Hideharu Nakajima, Masato Doi
  • Method of fabricating semiconductor device and semiconductor device
    Patent number: 6927164
    Abstract: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device.
    Type: Grant
    Filed: August 2, 2002
    Date of Patent: August 9, 2005
    Assignee: Sony Corporation
    Inventors: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
  • Image display unit
    Publication number: 20050167677
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Process for producing a semiconductor light-emitting device
    Publication number: 20050167676
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Lighting system
    Publication number: 20050167675
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Process for producing a semiconductor light-emitting device
    Publication number: 20050170538
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Lighting system
    Publication number: 20050167678
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Semiconductor light-emitting device and process for producing the same
    Patent number: 6924500
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: August 2, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Process for production of nitride semiconductor device and nitride semiconductor device
    Publication number: 20050161688
    Abstract: Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.
    Type: Application
    Filed: March 22, 2005
    Publication date: July 28, 2005
    Inventors: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
  • Semiconductor light emitting device
    Publication number: 20050161661
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Application
    Filed: March 9, 2005
    Publication date: July 28, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Semiconductor light emitting device, display unit, method of fabricating semiconductor light emitting device, and method of fabricating semiconductor laser
    Publication number: 20050161681
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Application
    Filed: March 9, 2005
    Publication date: July 28, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Semiconductor light-emitting device and process for producing the same
    Publication number: 20050145859
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: February 24, 2005
    Publication date: July 7, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Semiconductor light emitting element and method for manufacturing same, integrated semiconductor light-emitting device and method for manufacturing same, image display and method for manufacturing same, and illuminating device and method for manufacturing same
    Publication number: 20050145865
    Abstract: A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
    Type: Application
    Filed: February 19, 2004
    Publication date: July 7, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Jun Suzuki, Toyoharu Oohata
  • Semiconductor light emitting device
    Patent number: 6881982
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Grant
    Filed: March 5, 2002
    Date of Patent: April 19, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Crystal layer separation method, laser irradiation method and method of fabricating devices using the same
    Patent number: 6870125
    Abstract: Disclosed are a crystal layer separation method capable of separating a crystal layer formed on a substrate therefrom without occurrence of any crack, and a laser irradiation method used therefor, and a method of fabricating devices using the same. The crystal layer separation method includes the step of separating a crystal layer made from a GaN based compound formed on a sapphire substrate therefrom by irradiating the crystal layer with a laser beam from the back surface of the substrate, wherein the crystal layer is irradiated with the laser beam in a line-shape. In this method, an irradiation width of the laser beam is preferably equal to or less than a thickness of the crystal layer, and the laser beam preferably has a light intensity distribution smoothened in the width direction.
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: March 22, 2005
    Assignee: Sony Corporation
    Inventors: Masato Doi, Toshiaki Iwafuchi, Toyoharu Oohata
  • Display unit and semiconductor light emitting device
    Patent number: 6870190
    Abstract: A display unit and semiconductor light emitting devices are provided. The display unit includes a number of the semiconductor light emitting devices arrayed on a base body, wherein each of the semiconductor light emitting devices is formed together with dummy devices for setting an emission wavelength of the semiconductor light emitting device, and the semiconductor light emitting device is formed by selective growth, and one conductive layer is formed in self-alignment on planes grown from tilt planes formed by selective growth. Such a display unit has a structure suitable for multi-colors without increasing the number of production steps.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: March 22, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Masaru Minami
  • Semiconductor light emitting device and fabrication method thereof
    Publication number: 20050045894
    Abstract: Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
    Type: Application
    Filed: October 8, 2004
    Publication date: March 3, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Chip resistor
    Patent number: 6856234
    Abstract: A chip resistor includes an insulating substrate 2 in the form of a chip having an upper surface and an opposite pair of side surfaces, a resistor film 4 formed on the upper surface of the insulating substrate 2, a pair of upper electrodes 5 formed on the upper surface of the insulating substrate 2 to flank the resistor film 4 in electrical connection thereto, a cover coat 6 covering the resistor film 4, an auxiliary upper electrode 7 formed on each of the upper electrodes 5 and including a first portion 7a adjoining the relevant side surface of the insulating substrate 2 and a second portion 7b overlapping the cover coat 6, and a side electrode 8 formed on each of the side surfaces of the insulating substrate 2 and electrically connected to at least the upper electrode 5 and the auxiliary upper electrode 7.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: February 15, 2005
    Assignee: Rohm Co., Ltd.
    Inventors: Takahiro Kuriyama, Masato Doi
  • Semiconductor element
    Patent number: D505923
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: June 7, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Semiconductor element
    Patent number: D505924
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: June 7, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata