Abstract: The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.

Abstract: The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.

Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: Provided is a curable resin composition which exhibits improved developability even in through holes and can suppress the generation of development residue and which can yield a cured product with excellent heat resistance and hardness. A curable resin composition which comprises a carboxyl-containing resin, a photopolymerization initiator, and barium sulfate that has been pretreated with a dispersant having an acid group and/or a dispersant having a block copolymer structure, a graft polymer structure, and/or a star polymer structure.

Abstract: In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Abstract: The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively.

Abstract: A navigation apparatus is disclosed. The navigation apparatus includes a remote control device having a manipulation member and a force generator. The manipulation member is movable in response to user's manipulation and enables the user to point to a position on a display screen of the display device remotely. The force generator applies a force to the manipulation member against the manipulation of the manipulation member. The navigation apparatus sets content of the force based on an arrangement of an item image on the display screen, so that the force causes the pointed position to be attracted toward a fixed item image when the pointed position is located around the fixed item image, while the first force does not cause the pointed position to be attracted toward an on-map item image, which is superimposed on a map image.

Abstract: Provided is a laser apparatus including: a DFB fiber laser 40 including, as an amplitude medium, a rare earth doped silica optical fiber codoped with a high concentration of aluminum; an optical feedback path 50 formed by a ring-shaped optical fiber; and an optical coupler 70 a) feeding back a part of an output of the DFB fiber laser 40 to the DFB fiber laser 40 via the optical feedback path 50, and b) outputting, to outside, another part of the output of the DFB fiber laser 40, where the optical fiber forming the optical feedback path 50 is longer than a length at which a relaxation oscillation noise in the output to the outside becomes ?110 dB/Hz.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.

Abstract: The present invention includes a dicing sheet-attached film for forming a semiconductor protection film (14), which protects a semiconductor element (18) mounted on a base material and positioned on the outermost side. The dicing sheet-attached film for forming a semiconductor protection film (14) comprises a protection film-forming layer (12) which is composed of a resin composition and protects a surface of the semiconductor element (18) opposite to the surface of the semiconductor element (18) mounted on the base material, and a dicing sheet (13) laminated on the protection film-forming layer.

Abstract: The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.