Abstract: The present invention aims to provide an iminopyridine derivative compound having an ?1D adrenergic receptor antagonistic action, which is useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: The present invention aims to provide a compound having a superior selective ?1D adrenergic receptor antagonistic action and useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: The present invention aims to provide an iminopyridine derivative compound having an ?1D adrenergic receptor antagonistic action, which is useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: There is provided a charging apparatus that, even when an AC adapter is connected and there is heavy load, makes it possible to reduce heat produced due to the power loss of a control transistor, reduce cost and area for implementation, and improve safety. Charging apparatus 100 has: P-channel MOS transistors M1 and M2 that control charging current; current detecting resistance Rs that is connected to current output terminals of P-channel MOS transistors M1 and M2 and detects the charging current; switch 130 that is arranged on a path that bypasses current detecting resistance Rs; and load 300 that receives power supply from battery 200 without involving current detecting resistance Rs when switch 130 is closed.

Abstract: A cylinder head cleaning method capable of cleaning a cylinder head with an enhanced foreign matter removing rate. The method is used to clean a cylinder head having therein a water jacket including a narrow space portion having a narrow flow path and a large space having a flow path wider than the narrow space portion, and the cylinder head further including holes communicating with the water jacket. Cleaning nozzles are inserted into the water jacket from the holes selected from the holes, clearing liquid is ejected from the cleaning nozzles toward the narrow space portion, and the cleaning liquid flowing from the narrow space portion to the large space is discharged to the outside of the cylinder head from the hole communicating with the space.

Abstract: The adhesive film of the present invention is adapted to be used for bonding a semiconductor element and a substrate together or bonding semiconductor elements together. The adhesive film is formed of a resin composition containing an epoxy resin, an acrylic resin, and an acrylic oligomer having a weight average molecular weight of 6,000 or less. The resin composition is characterized in that in the case where an amount of the acrylic resin contained in the resin composition is defined as Wa and an amount of the acrylic oligomer contained therein is defined as Wb, a ratio of Wa/Wb is in the range of 0.5 to 4. Further, the semiconductor device of the present invention is characterized in that a semiconductor element and a substrate or semiconductor elements are bonded together using the above mentioned adhesive film.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: An interface detecting circuit and interface detecting method are provided, whereby operations can be carried out depending on peripheral devices connected to USB terminals, and whereby the system can be simplified and software load can be reduced. A pull-down resistor is connected to an ID terminal of a Mini-A receptacle of a peripheral device, the voltage generated by the pull-down resistor, which is pulled down by the ID terminal of the Mini-A receptacle of the peripheral device, and a pull-up resistor, which is pulled up by the ID terminal of a Mini-B receptacle of a device, is detected in an analog fashion, using a detecting section comprised of comparators, and, via a logic section, a logic output is subjected to noise cancellation in a filter section and is memorized in a register section. The operations of other devices are determined according to the states memorized in the register section.

Abstract: A navigation apparatus is disclosed. The navigation apparatus includes a remote control device having a manipulation member and a force generator. The manipulation member is movable in response to user's manipulation and enables the user to point to a position on a display screen of the display device remotely. The force generator applies a force to the manipulation member against the manipulation of the manipulation member. The navigation apparatus sets content of the force based on an arrangement of an item image on the display screen, so that the force causes the pointed position to be attracted toward a fixed item image when the pointed position is located around the fixed item image, while the first force does not cause the pointed position to be attracted toward an on-map item image, which is superimposed on a map image.

Abstract: A laser oscillator includes a ring resonator. The ring resonator includes an optical circulator having first, second, third, and fourth ports and a first optical amplification fiber connected to the optical circulator. Light incident on the first port is exited from the second port, and light incident on the second port is exited from the third port. The fourth port provides an exciting light and injects the exciting light into the ring resonator through the first port. The first optical amplification fiber amplifies light exited from the third port with the exciting light provided by the fourth port. The laser oscillator also includes an optical member connected to the optical circulator. The optical member reflects at least a part of the light exited from the second port and injects the same into the second port again.

Abstract: Provided is a laser apparatus including: a DFB fiber laser 40 including, as an amplitude medium, a rare earth doped silica optical fiber codoped with a high concentration of aluminum; an optical feedback path 50 formed by a ring-shaped optical fiber; and an optical coupler 70 a) feeding back a part of an output of the DFB fiber laser 40 to the DFB fiber laser 40 via the optical feedback path 50, and b) outputting, to outside, another part of the output of the DFB fiber laser 40, where the optical fiber forming the optical feedback path 50 is longer than a length at which a relaxation oscillation noise in the output to the outside becomes ?110 dB/Hz.

Abstract: Provided are an iminopyridine derivative having a selective ?1D adrenergic receptor antagonistic action and useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like, and a screening method for a compound having an ?1D adrenergic receptor antagonistic action. An ?1D adrenergic receptor antagonist containing a compound represented by the formula: wherein each symbol is as defined in the specification, or a salt thereof, and a method of screening for an agent having an ?1D adrenergic receptor antagonistic action for the prophylaxis or treatment of a lower urinary tract disease, which includes measuring the bladder smooth muscle tension of rats with bladder outlet obstruction.

Abstract: The present invention aims to provide an iminopyridine derivative compound having an ?1D adrenergic receptor antagonistic action, which is useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

Abstract: To extend the temperature range for a stable operation without mode hopping and obtain a stable laser oscillation, a laser oscillator is provided. The laser oscillator includes: an optical circulator in which light incident on a first port is exited from the second port, light incident on the second port is exited from a third port, and light incident on a fourth port is exited from the first port; a first optical amplification fiber that amplifies the light exited from the third port because of being excited by an exciting light and injects the same into the first port; a reflective optical filter that reflects light with a predetermined wavelength among the light exited from the second port and injects the same into the second port again; and an pump light source that generates an exciting light to excite the first optical amplification fiber.

Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.