Abstract: A thinner composition includes: (B) a solvent containing: (B1) a compound represented by the following general formula (b-1): wherein R0 is an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an acyl group having 1 to 10 carbon atoms, and R1 is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.

Abstract: A polymer including tellurium in the main chain, which is prepared by reacting (A) a compound having a plurality of cyclic (thio) ether groups, and (B) TeX4, wherein X is a halogen atom.

Abstract: A resist auxiliary film composition includes: (A) a resin; and (B) a solvent containing: (B1) a compound represented by the following general formula (b-1), wherein the content of the active component is 45% by mass or less based on the total amount of the resist auxiliary film composition: wherein R0 is an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an acyl group having 1 to 10 carbon atoms, and R1 is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.

Abstract: A compound represented by the following formula (1): wherein RG is a group containing at least one cyclic structure, I is an iodine atom, R1 is a monovalent functional group having 0 to 30 carbon atoms, containing no polymerizable unsaturated bond, and being optionally the same or different; n is an integer of 1 to 5, and m is an integer of 1 to 5.

Abstract: A composition for spin-on carbon film formation, that is a composition for forming a spin-on carbon film as an underlayer film for lithography, containing a dendritic polymer.

Abstract: A resist auxiliary film composition includes: (A) a resin; and (B) a solvent containing: (B1) a compound represented by the following general formula (b-1), wherein the content of the active component is 45% by mass or less based on the total amount of the resist auxiliary film composition: wherein R1 is an alkyl group having 1 to 10 carbon atoms.

Abstract: A resist composition includes: (A) a resin; and (B) a solvent containing: (B1) a compound represented by the following general formula (b-1), wherein the content of the active component is 45% by mass or less based on the total amount of the resist composition: wherein R1 is an alkyl group having 1 to 10 carbon atoms.

Abstract: A compound represented by the following formula (1). The compound can be used as a film forming material for lithography or an optical component forming material. A resin may also be obtained using this compound as a monomer, a composition, a method for forming a resist pattern, a method for forming an insulating film, a method for forming a circuit pattern, and a method for purifying the above compound or resin.

Abstract: A thinner composition includes: (B) a solvent containing: (B1) a compound represented by the following general formula (b-1): wherein R1 is an alkyl group having 1 to 10 carbon atoms. A method for manufacturing a semiconductor device includes applying the thinner composition to a substrate, before applying a photoresist film material or a photoresist underlayer film material to the substrate.

Abstract: In order to provide a film forming material for lithography or the like that has high film formability and solvent solubility, is applicable to a wet process, is excellent in curability, film heat resistance, film etching resistance, embedding properties to a substrate having difference in level, and film flatness, and is useful for forming a photoresist underlayer film, a film forming material for lithography according to the present disclosure contains a compound having an amino group bonded to an aromatic ring, and the compound is one represented by, for example, formula (1A), formula (1B), formula (2), formula (3), formula (4), or the like, as described in the specification.

Abstract: A polymer having a constituent unit derived from a monomer represented by the following formula (0), wherein the polymer has sites in which the constituent units are linked by direct bonding between aromatic rings of the monomer represented by the formula (0): wherein R is a monovalent group, and m is an integer of 1 to 5, wherein at least one R is a hydroxyl group, an alkoxy group having 1 to 40 carbon atoms and optionally having a substituent, or an amino group having 0 to 40 carbon atoms and optionally having a substituent.

Abstract: A composition for film formation containing a polycyclic polyphenolic resin having repeating units derived from at least one monomer selected from the group consisting of aromatic hydroxy compounds represented by the formulas (1-0), (1A), and (1B), wherein the repeating units are linked by a direct bond between aromatic rings:

Abstract: An object of the present invention is to provide a novel resin that is useful as a film forming material for lithography and the like. The problem can be solved by a resin containing a constituent unit represented by the following formula (1) or (1)?: wherein the variables in the formulas are as described in the specification.

Abstract: A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin are provided. The compounds and materials can provide for high solubility in a safe solvent.

Abstract: Provided is a compound, a polymer, a composition, a composition for film formation, a pattern formation method, an insulating film formation method, and a method for producing a compound, by which a resist having excellent exposure sensitivity can be obtained. A compound represented by the following formula (1): wherein RA is a hydrogen atom, a methyl group, or a trifluoromethyl group; RX is ORB or a hydrogen atom; RB is a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms; and P is a hydroxy group, an alkoxy group, an ester group, an acetal group, a carboxyalkoxy group, a carbonate ester group, a nitro group, an amino group, a carboxyl group, a thiol group, an ether group, a thioether group, a phosphine group, a phosphone group, a urethane group, a urea group, an amide group, an imide group, or a phosphate group.

Abstract: The present invention provides a film forming composition for lithography containing at least one selected from a compound having a predetermined structure and a resin obtained using the compound as a monomer.

Abstract: An object of the present invention is to provide a resist underlayer film forming composition for lithography that has features of having excellent smoothing performance on an uneven substrate, good embedding performance into a fine hole pattern, and a smoothed wafer surface after film formation, and the like. The object can be achieved by an underlayer film forming composition for lithography containing a compound having a protecting group.

Abstract: A polycyclic polyphenolic resin having repeating units derived from at least one monomer selected from the group consisting of aromatic hydroxy compounds represented by the formulas (1A) and (1B); or a polycyclic polyphenolic resin having repeating units derived from an aromatic hydroxy compound represented by the formula (C-1A), wherein the repeating units are linked to each other by a direct bonding between aromatic rings: wherein in the formula (1A), R1 is a 2n-valent group having 1 to 60 carbon atoms or a single bond, each R2 is independently an alkyl group having 1 to 40 carbon atoms and optionally having a substituent, an aryl group having 6 to 40 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 40 carbon atoms and optionally having a substituent, an alkynyl group having 2 to 40 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 40 carbon atoms and optionally having a substituent, a halogen atom, a thiol group, an amino group, a nitro group, a

Abstract: A polymer having repeating units derived from at least one monomer selected from the group consisting of aromatic hydroxy compounds represented by the formulas (1A) and (1B), wherein the repeating units are linked to each other by direct bonding between aromatic rings: wherein each R is independently an alkyl group having 1 to 40 carbon atoms and optionally having a substituent, an aryl group having 6 to 40 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 40 carbon atoms and optionally having a substituent, an alkynyl group having 2 to 40 carbon atoms, an alkoxy group having 1 to 40 carbon atoms and optionally having a substituent, a halogen atom, a thiol group, an amino group, a nitro group, a cyano group, a nitro group, a heterocyclic group, a carboxyl group, or a hydroxy group, at least one R is a group containing a hydroxy group, and each m is independently an integer of 1 to 10.

Abstract: An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).