Abstract: In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body. In addition, a switching element is also provided to such harmonics control circuit to enable the harmonics control without giving any influence on the radio frequency signal of each communication system.

Abstract: A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive the first frequency f1 and the second frequency f2 (f2=2×f1) is structured as explained below. This radio frequency power amplifier module for dual-band type mobile communication apparatus is comprised of a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor.

Abstract: In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

Abstract: A power MOSFET for a high frequency amplification element having good output power characteristics and high frequency characteristics is described. In the power MOSFET, a shield conductive film electrically connected to via an insulating film is arranged over a drain-offset semiconductor region. A wiring for a drain electrode is so arranged as to extent in parallel to the shield conductive film at one end side of the shield conductive film. On the other hand, a wiring for the gate electrode, a wiring for a source electrode and a gate shunt wiring are arranged in this order to extend in parallel to each other at the other end side of the shield conductive film. The shield conductive film is so formed that the thickness thereof is smaller than that of the wiring for the gate electrode. In this way, the input and output capacitances of the MOSFET can be decreased.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, lid (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A motor drive method and apparatus for reducing noise of a motor. The motor drive apparatus includes first, second and third half bridge circuits. Each of the first, second and third half bridge circuits includes a first transistor which is adapted to form a current path between a first operational potential and an output terminal thereof and a second transistor which is adapted to form a current path between a second operational potential and the output terminal thereof. Each of the output terminals are connected to the corresponding drive coil of a motor. Each of the first and second transistors includes a control terminal to which a control signal is supplied.

Abstract: In a semiconductor device including a power MOSFET (M.sub.0) for the output stage, a temperature detection circuit produces an output signal upon detecting an abnormal rise in the chip temperature, the signal turns on a set input element (M.sub.1) in a latch circuit so that the latch circuit becomes a set state, the set output of the latch circuit turns on a control element (M.sub.5), causing the power MOSFET to become non-conductive so that it is protected from destruction. The latch circuit is not brought to a reset state even if the external gate terminal of the device is brought to zero volt. With a voltage outside the range of the normal input signal, e.g., a large negative voltage, being applied to the external gate terminal, the gate capacitance of the control element (M.sub.5) discharges, and consequently the latch circuit is brought to the reset state and the protective operation is cancelled.

Abstract: A process for producing polyolefin with a vapor-phase fluidized-bed reactor, wherein the reaction is started after filling the reactor with particles which contain moisture and/or molecular oxygen and can form a fluidized bed in order to prevent the formation of molten resin which is liable to occur at the start of the reaction and to attain a smooth operation of the reactor.

Abstract: A process for producing polyolefin with a vapor-phase fluidized-bed reactor, wherein the reaction is started after filling the reactor with particles which contain moisture and/or molecular oxygen and can form a fluidized bed in order to prevent the formation of molten resin which is liable to occur at the start of the reaction and to attain a smooth operation of the reactor.

Abstract: A semiconductor integrated circuit has a semiconductor output device (3) , a sensor (5) generating an electric signal (7) relevant to heat generation (6) of the output device (3) and a microprocessor unit MPU 2, inside a chip (1). The MPU (2) is constructed of a memory (20) and CPU (22). The electric signal (7) generated from the sensor (5) is processed by the CPU (22) in accordance with a stored program of the memory (20). Accordingly, the drivability of the semiconductor output device (3) can be set in an optimum state corresponding to changes in chip temperature including changes that are only momentary.

Abstract: A process for feeding a powder catalyst with a gas intermittently to a high-pressure fluidized bed reactor for the vapor phase polymerization of olefin, wherein the cross section of a catalyst feed pipe is reduced midway through the pipe to thereby make continual catalyst feeding possible and prevent the formation of a lump polymer.

Abstract: A process for feeding a powder catalyst with a gas intermittently to a high-pressure fluidized bed reactor for the vapor phase polymerization of olefin, wherein the cross section of a catalyst feed pipe is reduced midway through the pipe to thereby make continual catalyst feeding possible and prevent the formation of a lump polymer.