Abstract: An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprises: a first conductive layer; a metal oxide layer provided on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer provided on the metal oxide layer; a second conductive layer; an electrolyte layer provided between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent; and wherein the functional dye layer is formed from an organic solvent ink.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.

Abstract: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Abstract: A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most ?30° C. and an oxygen concentration of at most 100 ppm.

Abstract: A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

Abstract: A dendron (2) comprising a focal point (4) and a plurality of fluorinated end groups (9) is disclosed, including one having a thiol, a silane, a carboxylic acid, a phosphonate or another moiety at the focal point suitable for chemisorption to a substrate (3). A self-assembled monolayer comprising a plurality of dendrons bonded to a substrate and a device comprising the self-assembled monolayer are also disclosed.

Abstract: A manufacturing method of a three-dimensional structure includes (a) placing a second porous sheet on top of a first porous sheet that has a predetermined external shape and at least part of which contains a first functional liquid, (b) bonding at least a range surrounded by a predetermined shape of the second porous sheet onto the first porous sheet, (c) processing the second porous sheet in the predetermined shape, and (d) after step (b), causing a second functional liquid to be contained in at least part of the range of the second porous sheet so that the first functional liquid and the second functional liquid are brought into contact through the first porous sheet and the second porous sheet.

Abstract: A communication terminal having a wireless communication facility including sending and receiving a message which is sent to a receiving terminal without a send request from a receiving terminal through a message center, including: a message sending/receiving unit sending and receiving the message; a time control unit controlling current time; a message analysis unit analyzing a message which is sent by a message center, received by the message sending/receiving unit, and includes time information assigned by a message center, and retrieving the time information; and a time setting unit setting in the time control unit a time indicated by the time information retrieved by the message analysis unit as a current time.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Abstract: To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element.

Abstract: Aspects of the invention can provide a method of effectively observing the photodecomposition process of a monolayer in real time. The invention can provide a method of observing the decomposition process of a monolayer when the monolayer is irradiated with UV rays, where the structure of the constituent molecule of the monolayer in an ultrahigh vacuum atmosphere and an oxygen-containing atmosphere respectively can be measured by a molecular structure measuring device during the UV irradiation. The invention can also provide a method of controlling the degree of surface decomposition of the monolayer that controls the ozone concentration accompanying the UV irradiation based on observation results obtained by using the observation method. The invention can further provide a method of patterning the monolayer that employs the control method.

Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.

Abstract: An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: A method of producing a multilayered wiring board having at least two wiring layers (wiring patterns 17, 31), polyamide 22 (an interlayer insulation film) between the wiring layers, and an interlayer conducting post (a conductor post) 18 for conducting between the wiring pattern 17 and the wiring pattern 31, wherein the polyimide 22 is disposed around the interlayer conducting post 18 using a liquid drop discharge system.

Abstract: An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprising: a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent, and wherein the metal oxide layer is formed from a metal oxide particle dispersion liquid.

Abstract: An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.