Abstract: To ensure that a liquid is placed in a predetermined region (without being placed in an adjacent region) with a uniform thickness in the region, when a light emitting layer constituting an organic EL element is placed by, for example, ink jet process. Thin SiO2 film pattern 3 having opening 3ais formed on ITO electrode 2. Next, ultrathin organic film pattern 41 having opening 4b is formed on thin SiO2 film pattern 3. The surface of ultrathin organic film pattern 41 becomes repellent to liquid. Hole transporting layer 61 is formed in opening 4b, and then liquid 7 containing a material for the formation of light emitting layer is discharged thereon by ink jet process. Fluid 7 does not remain on the surface of ultrathin organic film pattern 41 but enters opening 4b.

Abstract: A seamiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (O≦x, O≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1-s-t)AltN (O≦s, O≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.

Abstract: The present invention provides a III-V compound semiconductor having a laminated superlattice structure in which a first monoatomic layer and a second monoatomic layer are regularly laminated, the first monoatomic layer being formed by laminating 1 atomic layer of a group III atom selected from Al, Ga and In and 1 atomic layer of a group V atom selected from P, As and Sb, the second monoatomic layer being formed by laminating 1 atomic layer of the group III atom and 1 atomic layer of a nitrogen atom, and a semiconductor device using the same.

Abstract: A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

Abstract: A magneto-optical recording medium permitting satisfactory recording of information even at a small magnetic field in magnetic field modulation recording. The magneto-optical recording medium comprises a recording film formed by deposition of a recording layer and an antiferromagnetic layer. The thickness of the antiferromagnetic layer is 150 angstroms or less. When the Curie temperature of the recording layer is Tc1 and the Neel temperature of the antiferromagnetic layer is Tc2, Tc2 is higher than Tc1.

Abstract: In a magneto-optical recording medium, a first dielectric layer 12, a recording layer 13, an auxiliary recording layer 14, a second dielectric layer 15 and a reflective layer 16 are sequentially laminated on a transparent substrate 11. Recording layer 14 is formed of a rare-earth transition-metal amorphous alloy having a film thickness of about several hundreds angstroms. Auxiliary recording layer 14 is also formed of a rare-earth transition-metal amorphous alloy. However, the Curie temperature T.sub.C2 of auxiliary recording layer 14 is 10.degree. K or more higher than the Curie temperature T.sub.C1 of recording layer 13, and the film thickness of auxiliary recording layer is ultra-thin, such as, 70 .ANG. or less. Further, the squareness ratio of auxiliary recording layer 14 at the Curie temperature T.sub.C1 of recording layer 13 is 0.7 or higher.

Abstract: In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a second magnetic layer 12 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a third magnetic layer 13 formed of a light rare earth element-heavy rare earth element-transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element.

Abstract: In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a second magnetic layer 12 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a third magnetic layer 13 formed of a light rare earth element--heavy rare earth element--transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element.

Abstract: In a magneto-optical recording medium, a first dielectric layer 12, a recording layer 13, an auxiliary recording layer 14, a second dielectric layer 15 and a reflective layer 16 are sequentially laminated on a transparent substrate 11. Recording layer 14 is formed of a rare-earth transition-metal amorphous alloy having a film thickness of about several hundreds angstroms. Auxiliary recording layer 14 is also formed of a rare-earth transition-metal amorphous alloy. However, the Curie temperature T.sub.C2 of auxiliary recording layer 14 is 10.degree. K or more higher than the Curie temperature T.sub.C1 of recording layer 13, and the film thickness of auxiliary recording layer is ultra-thin, such as, 70.ANG. or less. Further, the squareness ratio of auxiliary recording layer 14 at the Curie temperature T.sub.C1 of recording layer 13 is 0.7 or higher.

Abstract: In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a second magnetic layer 12 formed of a light rare earth element--heavy rare earth element--transition metal alloy, a third magnetic layer 13 formed of a light rare earth element--heavy rare earth element--transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element.

Abstract: When data are thermo-magnetically recorded to a perpendicular magnetized film of a recording medium, it is possible to prevent unnecessary magnetic domains from being formed and unerasable magnetic domains from being produced. The medium 11 is rotated by a motor 12. When being passed through a recording field generated by a magnet 14, the medium 11 is irradiated with a recording beam generated by an optical head 13, so that data can be recorded to a perpendicular magnetized film of the medium 11 as bubble magnetic domains. Further, when the medium 11 passes through a correcting magnetic field generated by a magnet 15 disposed away from the position at which data are recorded, unnecessary and/or unerasable domains can be eliminated.