Abstract: A method of forming a metal oxide layer having metal oxide particles and a binder for an electrochemical cell, comprises: depositing a layer of metal oxide; and depositing a polymeric linking agent onto the layer of metal oxide. Additionally, a method of forming an electrochemical cell comprises forming a metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; and applying a pressure to the metal oxide layer. Furthermore, an electrochemical cell comprising the metal oxide layer formed using the above mentioned method may be formed.

Abstract: One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate alignment. A method of fabricating a patterned structure on a polymer layer for the manufacture of an electrochemical cell is provided. The method comprises: depositing a polymer layer upon a substrate; and stamping the polymer layer to form an embossed polymer layer using an embossing tool, the embossing tool having a first array of adjacent cells, spaced from one another and extending from the stamping face of the embossing tool and thereby forming a second array of adjacent cells, spaced from one another and extending as cavities within the embossed polymer layer.

Abstract: An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprises a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer; wherein at least one of the first and second conductive layers is transparent. In one embodiment, the electrochemical cell further comprises separating means formed on the first conductive layer and surrounding each of the plurality of adjacent metal oxide cells.

Abstract: An electrochemical cell and a method of manufacturing the same is provided. The electrochemical cell comprises a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent; and the functional dye layer comprises at least two different coloured functional dyes each having a depth of colour, such that at least some of the plurality of adjacent metal oxide cells have different colours.

Abstract: A method of forming a metal oxide layer for an electrochemical cell is provided. The method includes: forming a plurality of adjacent metal oxide cells, spaced from one another; and performing localised heating of the plurality of adjacent metal oxide cells. A method of forming an electrochemical cell is also provided. The method includes: forming a first conductive oxide layer; forming the metal oxide layer on the first conductive layer; forming a functional dye layer on the metal oxide layer; and forming a second conductive layer; and providing an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent.

Abstract: One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate-alignment. Accordingly a method of fabricating a patterned structure in the manufacture of an electrochemical cell comprising a soft-contact printing and ink-jet printing is provided.

Abstract: An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprises: a first conductive layer; a metal oxide layer provided on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer provided on the metal oxide layer; a second conductive layer; an electrolyte layer provided between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent; and wherein the functional dye layer is formed from an organic solvent ink.

Abstract: A nitride-based semiconductor light-emitting device having excellent reliability and long lifetime, and a method of manufacturing the same are provided. A nitride-based semiconductor light-emitting element chip, in which a nitride-based semiconductor layer and a first electrode are formed on a surface of an electrically conductive substrate and a second electrode is formed on a rear surface of the electrically conductive substrate, is mounted on a submount, and the submount having the nitride-based semiconductor light-emitting element chip mounted thereon is further mounted on a stem to form a nitride-based semiconductor light-emitting device.

Abstract: A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0?x, 0?y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0?s, 0?t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.

Abstract: In a nitride semiconductor light-emitting device, a cap is pressure-bonded on the top surface of a stem under electric discharge to form a package. The package encloses a heatsink, a nitride semiconductor laser element, electrode pins, and wires, and has sealed inside it a gas containing oxygen as a sealed atmosphere. At least the inner surface of the cap is plated with Ni and Pd, which are metals that can occlude hydrogen.

Abstract: A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Abstract: A communication terminal having a wireless communication facility including sending and receiving a message which is sent to a receiving terminal without a send request from a receiving terminal through a message center, including: a message sending/receiving unit sending and receiving the message; a time control unit controlling current time; a message analysis unit analyzing a message which is sent by a message center, received by the message sending/receiving unit, and includes time information assigned by a message center, and retrieving the time information; and a time setting unit setting in the time control unit a time indicated by the time information retrieved by the message analysis unit as a current time.

Abstract: A self-assembled monolayer (SAM) is fabricated using either a semi-fluorinated sulphur containing compound, or a sem-fluorinated silane derivative and compressed carbon dioxide (CO2) as the solvent medium. The temperature and/or pressure of the compressed CO2 may be varied during the fabrication process to improve the molecular packing density of the monolayer. By using compressed CO2 as the solvent medium, monolayers with good molecular packing density can be fabricated relatively quickly without the use of environmentally unfriendly solvents.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III–V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the, cap is kept clean.

Abstract: A dendron (2) comprising a focal point (4) and a plurality of fluorinated end groups (9) is disclosed, including one having a thiol, a silane, a carboxylic acid, a phosphonate or another moiety at the focal point suitable for chemisorption to a substrate (3). A self-assembled monolayer comprising a plurality of dendrons bonded to a substrate and a device comprising the self-assembled monolayer are also disclosed.

Abstract: A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most ?30° C. and an oxygen concentration of at most 100 ppm.

Abstract: Aspects of the invention can provide a method of effectively observing the photodecomposition process of a monolayer in real time. The invention can provide a method of observing the decomposition process of a monolayer when the monolayer is irradiated with UV rays, where the structure of the constituent molecule of the monolayer in an ultrahigh vacuum atmosphere and an oxygen-containing atmosphere respectively can be measured by a molecular structure measuring device during the UV irradiation. The invention can also provide a method of controlling the degree of surface decomposition of the monolayer that controls the ozone concentration accompanying the UV irradiation based on observation results obtained by using the observation method. The invention can further provide a method of patterning the monolayer that employs the control method.

Abstract: The invention provides an organic silane molecular film, having a thickness of 3 nm or less and an aromatic hydrocarbon group as a part of the molecular structure of the film that is formed on the surface of the substrate. Accordingly, a molecular film pattern can be efficiently formed by using a molecular film having a superior photolytic property. Additionally, the invention can provide a patterning technique that can easily form a molecular film pattern at a high speed with the number of steps of manufacturing a semiconductor device, as well as the cost, being reduced.