Abstract: A polymer (P) to generate an acid by light exposure and to change in solubility in a developer with an action of the acid, the polymer containing: a repeating unit represented by the following formula (A-1); a repeating unit represented by any one or more selected from the following formulae (B-1), (B-2), (B-3), and (B-4) to generate an acid by light exposure; and a repeating unit represented by the following formula (a-1) or (a-2) other than the repeating unit represented by the formula (A-1). This provides a polymer to be contained in a resist composition that is excellent in etching resistance and that makes it possible to form a pattern with high sensitivity, high resolution, high contrast, and small LWR and CDU when using, in particular, an electron beam or an extreme ultraviolet ray (EUV) having a wavelength of 13.5 nm; a resist composition containing the polymer; and a patterning process using the resist composition.

Abstract: The present invention is a resist composition, including: a resin (A) having: a repeating unit represented by the general formula (p-1); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); a resin (B) having: a repeating unit represented by the general formula (p-2); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); and a solvent (D), wherein a content of the resin (A) contained in the resist composition is smaller than a content of the resin (B). This provides a resist composition that reduces roughness and size uniformity of a hole pattern with high resolution exceeding that of conventional resist materials even with a high exposure-dose region, that has good pattern shape after exposure, and that has excellent etching resistance.

Abstract: An object of the present invention is to provide a resist material and a pattern forming method with which the edge roughness and dimension variation become small, superior resolution can be obtained, pattern shape becomes preferable after exposure, and further preferable storage stability can be obtained.

Abstract: Provided is a polymer, a resist composition, and a pattern forming method with high sensitivity, high resolution, and high contrast, and that can form a pattern with small variation in pattern width (LWR), and small in-plane uniformity of the pattern (CDU) with high energy ray. A polymer to generate an acid by light exposure and to change in solubility in a developing liquid with an action of the acid, the polymer including: a repeating unit represented by the following formula (A-1); and a repeating unit represented by any one or more of the following formulae (B-1) to (B-4), wherein, M? represents a non-nucleophilic counterion, A+ represents an onium cation, n1 represents an integer of 1 or 2, n2 represents an integer of 0 to 2, n3 represents an integer of 0 to 5, n4 represents an integer of 0 to 2, and “c” represents an integer of 0 to 3.

Abstract: A salt having formula (1) or (2) serving as an acid diffusion inhibitor is provided as well as a resist composition comprising the acid diffusion inhibitor. When processed by lithography, the resist composition exhibits a high sensitivity, and excellent lithography properties such as CDU and LWR.

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: A chemically amplified resist composition is provided comprising (A) a polymer P comprising repeat units having an acid labile group containing a fluorinated aromatic ring, repeat units having a phenolic hydroxy group, and repeat units adapted to generate an acid upon exposure, (B) an onium salt type quencher, and (C) a solvent. The resist composition exhibits a high sensitivity, low LWR and improved CDU when processed by photolithography.

Abstract: A positive resist material contains an acid generator, and a base polymer containing a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond. The repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond is represented by a repeating unit-a in the following formula (1). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials and smaller dimensional variation; and a patterning process.

Abstract: A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

Abstract: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.

Abstract: A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

Abstract: Polymerization reaction is performed using a polymerizable monomer shown by the following general formula (1) and at least one monomer selected from monomers each having a structure of a salt among a lithium salt, a sodium salt, a potassium salt, and a nitrogen compound salt of a fluorosulfonic acid or the like; then, the structure of the salt of the repeating unit of a polymer obtained by the polymerization reaction is changed to the fluorosulfonic acid or the like by ion exchange. Thus, the present invention provides a polymer compound for a conductive polymer and a method for producing the polymer compound which is suitably used as a dopant for a fuel cell and a conductive material, and which is a copolymer containing a repeating unit of styrene having a 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylisobutyl ether group, and a repeating unit having any of a fluorosulfonic acid, a fluorosulfonimide group, and a n-carbonyl-fluoro-sulfonamide group.

Abstract: A positive resist material contains a base polymer containing: a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond; and a repeating unit having an acid generator shown by any of the following formulae (b1) to (b3). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials, and smaller dimensional variation; and a patterning process using this inventive positive resist material.

Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Abstract: A polymer comprising recurring units having a multiple bond-containing acid labile group, recurring units having a phenolic hydroxyl group, and recurring units adapted to generate an acid upon exposure is used to formulate a resist composition, which exhibits a high sensitivity, low LWR and improved CDU when processed by lithography using EUV of wavelength 13.5 nm.

Abstract: An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.

Abstract: A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

Abstract: Polymerization reaction is performed using a polymerizable monomer shown by the following general formula (1) and at least one monomer selected from monomers each having a structure of a salt among a lithium salt, a sodium salt, a potassium salt, and a nitrogen compound salt of a fluorosulfonic acid or the like; then, the structure of the salt of the repeating unit of a polymer obtained by the polymerization reaction is changed to the fluorosulfonic acid or the like by ion exchange. Thus, the present invention provides a polymer compound for a conductive polymer and a method for producing the polymer compound which is suitably used as a dopant for a fuel cell and a conductive material, and which is a copolymer containing a repeating unit of styrene having a 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylisobutyl ether group, and a repeating unit having any of a fluorosulfonic acid, a fluorosulfonimide group, and a n-carbonyl-fluoro-sulfonamide group.