Patents by Inventor Masayoshi Yajima

Masayoshi Yajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210381128
    Abstract: A vapor phase growth apparatus of an embodiment includes: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; a plurality of first gas conduits for supplying the first process gas from the first gas chamber to the reactor, each of the first gas conduits having a predetermined length; and a first adjustment conduit inserted to an upper side of one of the plurality of first gas conduits. The first adjustment conduit has as annular protrusion provided on an outer periphery of an upper end portion and is removable from the first gas conduit.
    Type: Application
    Filed: August 25, 2021
    Publication date: December 9, 2021
    Inventors: Yoshiaki DAIGO, Masayoshi YAJIMA, Kunihiko SUZUKI, Akio ISHIGURO
  • Publication number: 20210180208
    Abstract: According to an embodiment, provided is a vapor phase growth apparatus including: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; and a plurality of first gas flow paths supplying the first process gas from the first gas chamber to the reactor, in which at least one of the plurality of gas flow paths has a first region and a second region located between the first region and the reactor, the first region has a first opening cross-sectional area in a plane perpendicular to a direction of a flow of the first process gas and a first length in the direction, the second region has a second opening cross-sectional area in the plane perpendicular to the direction and a second length in the direction, the first opening cross-sectional area is smaller than the second opening cross-sectional area, and the first length is equal to or less than the second length.
    Type: Application
    Filed: February 1, 2021
    Publication date: June 17, 2021
    Applicant: NuFlare Technology, Inc.
    Inventors: Yoshiaki DAIGO, Masayoshi YAJIMA, Kunihiko SUZUKI, Akio ISHIGURO
  • Patent number: 10745824
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: August 18, 2020
    Assignee: NuFlare Technology, Inc.
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Masayoshi Yajima, Kazukuni Hara, Hiroaki Fujibayashi, Hideki Matsuura, Katsumi Suzuki
  • Patent number: 10316429
    Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 11, 2019
    Assignees: Kabushiki Kaisha Toshiba, NuFlare Technology, Inc.
    Inventors: Shinya Higashi, Kaori Deura, Kunihiko Suzuki, Masayoshi Yajima
  • Publication number: 20180135175
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber capable of housing a substrate therein; a gas supplier located in an upper part of the film forming chamber and having a plurality of nozzles supplying gases onto a film forming face of the substrate; a heater configured to heat the substrate; and a first protection cover having a plurality of opening parts at positions corresponding to the nozzles of the gas supplier, respectively.
    Type: Application
    Filed: November 15, 2017
    Publication date: May 17, 2018
    Inventors: Kunihiko SUZUKI, Naohisa IKEYA, Masayoshi YAJIMA, Kazukuni HARA, Hiroaki FUJIBAYASHI, Hideki MATSUURA, Katsumi SUZUKI
  • Publication number: 20180135203
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.
    Type: Application
    Filed: November 15, 2017
    Publication date: May 17, 2018
    Inventors: Kunihiko SUZUKI, Naohisa IKEYA, Masayoshi YAJIMA, Kazukuni HARA, Hiroaki FUJIBAYASHI, Hideki MATSUURA, Katsumi SUZUKI
  • Publication number: 20180073163
    Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.
    Type: Application
    Filed: September 6, 2017
    Publication date: March 15, 2018
    Applicants: Kabushiki Kaisha Toshiba, NuFlare Technology, Inc.
    Inventors: Shinya HIGASHI, Kaori Deura, Kunihiko Suzuki, Masayoshi Yajima
  • Patent number: 9552983
    Abstract: A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: January 24, 2017
    Assignee: NuFlare Technology, Inc.
    Inventors: Hironobu Hirata, Masayoshi Yajima, Yoshikazu Moriyama
  • Publication number: 20150228477
    Abstract: A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
    Type: Application
    Filed: April 28, 2015
    Publication date: August 13, 2015
    Inventors: Hironobu HIRATA, Masayoshi YAJIMA, Yoshikazu MORIYAMA
  • Patent number: 8524103
    Abstract: A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: September 3, 2013
    Assignee: NuFlare Technology, Inc.
    Inventors: Hideki Arai, Masayoshi Yajima, Kunihiko Suzuki
  • Publication number: 20110200749
    Abstract: A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly.
    Type: Application
    Filed: February 3, 2011
    Publication date: August 18, 2011
    Inventors: Kunihiko SUZUKI, Masayoshi Yajima
  • Patent number: 7967912
    Abstract: A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: June 28, 2011
    Assignee: NuFlare Technology, Inc.
    Inventors: Masayoshi Yajima, Kunihiko Suzuki
  • Patent number: 7923355
    Abstract: A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: April 12, 2011
    Assignee: Nuflare Technology, Inc.
    Inventors: Masayoshi Yajima, Yoshikazu Moriyama
  • Publication number: 20100163524
    Abstract: A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.
    Type: Application
    Filed: December 11, 2009
    Publication date: July 1, 2010
    Inventors: Hideki ARAI, Masayoshi Yajima, Kunihiko Suzuki
  • Publication number: 20100075509
    Abstract: A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
    Type: Application
    Filed: September 21, 2009
    Publication date: March 25, 2010
    Inventors: Hironobu Hirata, Masayoshi Yajima, Yoshikazu Moriyama
  • Publication number: 20090269490
    Abstract: An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.
    Type: Application
    Filed: April 16, 2009
    Publication date: October 29, 2009
    Inventors: Yoshikazu MORIYAMA, Hideaki NISHIKAWA, Masayoshi YAJIMA, Hiroshi FURUTANI, Shinichi MITANI, Michio NISHIBAYASHI
  • Publication number: 20090142933
    Abstract: A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.
    Type: Application
    Filed: November 26, 2008
    Publication date: June 4, 2009
    Inventors: Masayoshi YAJIMA, Kunihiko SUZUKI
  • Publication number: 20090139448
    Abstract: A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism.
    Type: Application
    Filed: November 25, 2008
    Publication date: June 4, 2009
    Inventors: Hironobu HIRATA, Masayoshi Yajima
  • Publication number: 20090111278
    Abstract: A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.
    Type: Application
    Filed: October 24, 2008
    Publication date: April 30, 2009
    Inventors: Masayoshi YAJIMA, Yoshikazu Moriyama
  • Publication number: 20090068851
    Abstract: A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.
    Type: Application
    Filed: September 10, 2008
    Publication date: March 12, 2009
    Inventors: Hironobu Hirata, Yoshikazu Moriyama, Masayoshi Yajima, Shinichi Mitani