Abstract: One aspect of the present invention relates to a dinaphthyl ether compound represented by formula (1): in the formula (1), R1 and R2 are the same or different and each represent a linear or branched hydrocarbon group having 6 to 32 carbon atoms; m and n are each a real number of 0 or more and satisfy 1.0?m+n?3.0.

Abstract: One aspect of the present invention relates to a naphthyl phenyl ether compound represented by formula (1): in the formula (1), R1 and R2 are the same or different and each represent a linear or branched hydrocarbon group having 6 to 28 carbon atoms; m and n are each a real number of 0 or more and satisfy 1.0?m+n?3.0.

Abstract: A semiconductor laser element includes a substrate and a semiconductor stack. The semiconductor stack includes an N-side semiconductor layer, an active layer, a P-side semiconductor layer, and a P-type contact layer. The semiconductor stack includes two end faces. Laser light resonates between the two end faces. The semiconductor stack includes: a ridge portion; and a bottom portion surrounding the ridge portion in a top view of the semiconductor stack. The ridge portion protrudes upward from the bottom portion, is spaced apart from the two end faces, and includes at least a portion of the P-type contact layer. A current injection window is provided only on the ridge portion out of a top face of the semiconductor stack, the current injection window being a region into which a current is injected. A distance from a top face of the active layer to the bottom portion is constant.

Abstract: For a node in which a difference between a base sensor value which is a sensor value obtained at certain time intervals and a first reference value which is a sensor value obtained when an organic EL element does not emit light in normal temperature state is greater than a threshold value, a correction value calculation circuit stores the product of a base computing value and a third reference value as a correction value in a correction value storage unit, the third reference value representing a ratio of the first reference value to a second reference value which is a sensor value obtained when the organic EL element emits light in normal temperature state, and the base computing value being obtained by providing the product of the third reference value and the base sensor value as an input value to a base computing value calculation circuit.

Abstract: A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.

Abstract: A light source unit includes: a first light emission point from which a first beam is emitted; a second light emission point from which a second beam is emitted and which is disposed apart from the first light emission point in a second direction perpendicular to a first direction; a deflection element that deflects the first and/or second beam; and a first condensing optical element that focuses, on a light collection surface, the first and second beams. The first beam at the first light emission point overlaps the second beam at the second light emission point in a third direction, and on the light collection surface, the first and second beams overlap each other in the second direction and are separate from each other in the third direction.

Abstract: A light source module includes a first semiconductor laser element hermetically sealed, a second semiconductor laser element hermetically sealed, and firth to fourth optical elements. A first laser beam prior to reaching the first optical element has divergence angle ?fd1 in a direction along a second optical axis and divergence angle ?sd1 in a direction along a third optical axis, and satisfy 90°>?fd1>?sd1>0°. Divergence angle ?fd12 of a first laser beam in the direction along the second optical axis decreases from divergence angle ?fd1, the first laser beam having exited the first optical element. A component of a first laser beam in the direction along the second optical axis is collimated, the first laser beam having exited the second optical element. The same applies to the second semiconductor laser element.

Abstract: An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.

Abstract: For a node in which a difference between a base sensor value which is a sensor value obtained at certain time intervals and a first reference value which is a sensor value obtained when an organic EL element does not emit light in normal temperature state is greater than a threshold value, a correction value calculation circuit stores the product of a base computing value and a third reference value as a correction value in a correction value storage unit, the third reference value representing a ratio of the first reference value to a second reference value which is a sensor value obtained when the organic EL element emits light in normal temperature state, and the base computing value being obtained by providing the product of the third reference value and the base sensor value as an input value to a base computing value calculation circuit.

Abstract: Provided is a touch-panel-integrated display device in which influences of noises due to voltages of data lines can be reduced, or noise correction can be easily performed. A touch-panel-integrated display device 1 includes a display panel that has a display area that includes a plurality of pixels defined by a plurality of gate lines 101 and a plurality of data lines 102. In the display area, a plurality of electrodes 111, and a plurality of lines 112 connected with the electrodes, are provided. A predetermined voltage is applied to each line 112 every fixed time period, and changes in the capacitance at each electrode 111 are detected. To each data line 102, a voltage having a polarity different from that for an adjacent one of the data lines 102 is applied. Each of the electrodes 111 is connected with at least one of the plurality of lines 112.

Abstract: A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0<x?y<z?y is satisfied, and D/L>0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

Abstract: A light source unit includes: a first light emission point from which a first beam is emitted; a second light emission point from which a second beam is emitted and which is disposed apart from the first light emission point in a second direction perpendicular to a first direction; a deflection element that deflects the first and/or second beam; and a first condensing optical element that focuses, on a light collection surface, the first and second beams. The first beam at the first light emission point overlaps the second beam at the second light emission point in a third direction, and on the light collection surface, the first and second beams overlap each other in the second direction and are separate from each other in the third direction.

Abstract: Provided is a touch-panel-integrated display device in which influences of noises due to voltages of data lines can be reduced, or noise correction can be easily performed. A touch-panel-integrated display device 1 includes a display panel that has a display area that includes a plurality of pixels defined by a plurality of gate lines 101 and a plurality of data lines 102. In the display area, a plurality of electrodes 111, and a plurality of lines 112 connected with the electrodes, are provided. A predetermined voltage is applied to each line 112 every fixed time period, and changes in the capacitance at each electrode 111 are detected. To each data line 102, a voltage having a polarity different from that for an adjacent one of the data lines 102 is applied. Each of the electrodes 111 is connected with at least one of the plurality of lines 112.

Abstract: A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.

Abstract: Provided is a touch-panel-integrated display device that, even in a case where it is caused to operate in the wake-up mode, flicker does not occur when the device returns from the sleep state. The touch-panel-integrated display device includes a plurality of electrodes provided in the display area, and a plurality of lines that are connected with the electrodes, wherein a touch scan signal is supplied to the plurality of lines, and a touch operation is detected based on changes in capacitances of the electrodes. When a predetermined time has elapsed since the last time a touch operation was detected, an operation state is shifted to a sleep state in which updating of display in the display panel is stopped. When a touch operation is detected by a detection circuit in the sleep state, the updating of the display in the display panel is resumed.

Abstract: A liquid crystal display device 10 includes a backlight device 12 exiting light, a liquid crystal panel 11 disposed on a light exit side with respect to the backlight device 12, a first conductive layer 31, and a conductive bonding member 32. The liquid crystal panel 11 includes an array substrate 11b, a CF substrate 11a overlapping the array substrate 11b on an opposite side from the backlight device 12 side, and a first polarizing plate 11d disposed on the backlight device 12 side with respect to the array substrate 11b. The first conductive layer 31 is disposed on a plate surface of one of the array substrate 11b and the first polarizing plate 11d. The conductive bonding member 32 is electrically connected to the first conductive layer 31 to bond the backlight device 12 and the liquid crystal panel 11 and connected to ground.

Abstract: The present invention aims to allow a liquid crystal display device with a built-in touch sensor using a common electrode as an electrode for touch detection to reduce occurrence of flicker when switching from the sleep period to the display period is performed. At least during a part of a sleep period, a display drive portion performs image data write processing in which a voltage is applied to a pixel electrode in a state in which a backlight is maintained in a light-out state by a backlight control portion. For example, the display drive portion applies a voltage corresponding to one of a specific image and a black image to a pixel electrode every predetermined period throughout the sleep period. Further, for example, the display drive portion applies a voltage corresponding to a display image during a period immediately before switching to the display period is performed in the sleep period.

Abstract: A display panel 10 includes an array board 10b including TFTs arranged in a matrix, a CF board 10a bonded to the array board 10b to be opposite the array board 10b, a first polarizing plate 10c bonded to the CF board 10a on a plate surface opposite from an array board 10b side, the first polarizing plate 10c including a conductive bonding layer 30 that is bonded to the CF board 10a, a conductive member 31 disposed on the plate surface of the CF board 10a opposite from the array board 10b side and overlapping the conductive bonding layer 30 on a CF board 10a side with respect to the conductive bonding layer 30, and a ground connection member 32 having one end connected to the conductive member 31 and another end connected to ground.

Abstract: A method of producing a touchscreen 12 includes a pattern forming process, a cutting process, and a three-dimensional forming process. The pattern forming process is for forming a touchscreen pattern 12P including at least electrode portions 17 and line portions on a plate surface of a base that has a sheet shape with flexibility. The cutting process is for cutting a use portion 16U out of the base 16 on which the touchscreen pattern 12 is formed. The three-dimensional shape forming process is for forming the use portion 16U out of the base 16 into a three-dimensional shape.

Abstract: A liquid crystal display device 10 includes a backlight device 12 exiting light, a liquid crystal panel 11 disposed on a light exit side with respect to the backlight device 12, a first conductive layer 31, and a conductive bonding member 32. The liquid crystal panel 11 includes an array substrate 11b, a CF substrate 11a overlapping the array substrate 11b on an opposite side from the backlight device 12 side, and a first polarizing plate 11d disposed on the backlight device 12 side with respect to the array substrate 11b. The first conductive layer 31 is disposed on a plate surface of one of the array substrate 11b and the first polarizing plate 11d. The conductive bonding member 32 is electrically connected to the first conductive layer 31 to bond the backlight device 12 and the liquid crystal panel 11 and connected to ground.