Abstract: A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

Abstract: A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.

Abstract: A coordinate sensor of the present invention includes light emitting diodes (10) and line sensors (13) each including light receiving elements (13s), and further includes, between the light emitting diodes (10) and the light receiving elements (13s), wavelength selective reflection mirrors (11) for allowing light emitted from the light emitting diodes (10) to be selectively incident to the light receiving elements (13s).

Abstract: A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: In an LED unit (23U), a plurality of P (an integer of three or more) units of LEDs (23) are placed so as to be mutually spaced apart while facing a line sensor (22C), and to supply light by way of being lit sequentially to a placement space (MS) to be lit. A position detection unit (12) uses a triangulation method to detect the positions of one or more objects, such as fingers, on a coordinate map area (MA) from the changes in the amount of light received according to P or more shadows at a line sensor unit (22U) that have been generated by light of the plurality of LEDs (23) illuminating at most P?1 objects placed in the placement space (MS).

Abstract: The amount of the light emitted from a light-emitting diode is changed from that of the initial condition to increase, among the light sensors that are not shielded from the light emitted from the light-emitting diode, the number of the light sensors at which the difference (C?D) between the light detection amount at the light sensor when the light-emitting diode is ON and the light detection amount at the light sensor when the light-emitting diode is OFF is equal to the difference (A?B) between the light detection amount at the light sensor in the initial condition when the light-emitting diode was ON and the light detection amount at the light sensors in the initial condition when the light-emitting diode was OFF with no detection object present.

Abstract: The present invention provides a location identification sensor (60) capable of identifying a location and moving pattern of an object with correction made in consideration of the moving pattern even if the object is moving. The sensor (60) identifies a location of an object by triangulation principle, and includes at least one pair of light emitting diodes (10a, 10b), line sensors (13), and location identification means for identifying location of an object (50) between the line sensors (13) and the diodes (10) based on the triangulation principle by using first positional information and second positional information, where the first positional information indicates where the object (50) was at a predetermined timing (T2) when the diode (10a) is on, and the second positional information indicates where the object (50) was at two timings (T1 and T3) when the diode (10b) is on, T1 and T3 being before and after T2, respectively.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

Abstract: In this semiconductor laser apparatus, a first wire-bonding portion is arranged at a position in a fourth direction from a first semiconductor laser device and in a first direction from a photodetector, and a second wire-bonding portion is arranged at a position in the fourth direction from the first semiconductor laser device and in a third direction from the first wire-bonding portion. A third wire-bonding portion is arranged at a position in a second direction from a third semiconductor laser device and in the first direction from the photodetector, and a fourth wire-bonding portion is arranged at a position in the second direction from the third semiconductor laser device and in the third direction from the third wire-bonding portion.

Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.