Abstract: To realize an electrophotographic photoreceptor excellent in abrasion resistance, the photosensitive layer of the photoreceptor comprises a polyester resin containing a repeating structural unit represented by the formula (1) and a hydrazone compound. (In the formula (1), Ar1 to Ar4 each represents, independently of each other, an arylene group which may have a substituent. X1 represents a bivalent group (including a single bond) and X2 represents a bivalent group (including a single bond) with 3 or less atoms.

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Abstract: A semiconductor device is disclosed which can prevent interlayer cracking of interlayer dielectric films while improving the adhesion between the interlayer dielectric films in a dicing process using a dicing blade. In a scribing line area, dummy wirings are formed respectively in a blade area through which a dicing blade passes in a dicing process and in non-blade areas formed on both sides of the blade area and through which the dicing blade does not pass. In the non-blade areas, vertically adjacent dummy wirings are coupled together through dummy vias, while in the blade area the vertically adjacent dummy wirings are not coupled together through dummy vias.

Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Abstract: To provide an electrophotographic photoreceptor having a high sensitivity, a good balance of various electric properties such as chargeability and residual potential, a good stability of the coating solution, and an excellent light resistance. An electrophotographic photoreceptor comprising an electroconductive support having thereon a photosensitive layer, wherein the photosensitive layer contains a compound represented by the following formula (1): (wherein R1 represents a group having a chiral center, R2 represents a hydrogen atom, an alkyl group which may have a substituent, or an aryl group which may have a substituent, R3 and R4 each independently represents an alkylene group which may have a substituent, or an arylene group which may have a substituent, and R5, R6, R7 and R8 each independently represents an alkyl group which may have a substituent, or an aryl group which may have a substituent, and at least one member of R5 to R8 is an aryl group having a substituent).

Abstract: To provide an electrophotographic photoreceptor excellent in electric characteristics and various characteristics, capable of forming a uniform photosensitive layer and excellent in repetitive characteristics, an image forming apparatus using it and an electrophotgraphic cartridge. A lamination type electrophotographic photoreceptor comprising an electroconductive substrate and a photosensitive layer formed thereon, characterized in that the photosensitive layer contains a compound represented by the following formula (1), the ratio of the weight of the compound represented by the formula (1) to the weight content of all binder resins contained in the photosensitive layer is from 0.15 to 0.

Abstract: Mechanical strength and moisture resistance of a multilayer interconnect structure is to be improved. A semiconductor device includes a circuit region and a seal ring region formed around the circuit region, on a semiconductor substrate. The seal ring region includes a plurality of interconnect layers including interconnect lines and a plurality of via layers including a plurality of slit vias stacked on one another, and a pitch between the slit vias in at least one of the via layers (lower or middle layer) is different from a pitch between the slit vias in other via layers (upper layer).

Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Abstract: To realize an electrophotographic photoreceptor excellent in abrasion resistance, the photosensitive layer of the photoreceptor comprises a polyester resin containing a repeating structural unit represented by the formula (1) and a hydrazone compound. (In the formula (1), Ar1 to Ar4 each represents, independently of each other, an arylene group which may have a substituent. X1 represents a bivalent group (including a single bond) and X2 represents a bivalent group (including a single bond) with 3 or less atoms.

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract: A designing method of a semiconductor device is achieved by setting interconnection reference data indicating permissible interconnection widths which are discrete, and a permissible interval between adjacent two of interconnections, the interconnection intervals being discrete; and by specifying an interconnection relating an impermissible width and interconnections relating to an impermissible interval from the interconnections for a semiconductor device based on the interconnection data. The permissible widths and the permissible intervals are preferably equal to or larger than a minimum design dimension.

Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.

Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.

Abstract: To provide an electrophotographic photoreceptor having a high sensitivity, a good balance of various electric properties such as chargeability and residual potential, a good stability of the coating solution, and an excellent light resistance. An electrophotographic photoreceptor comprising an electroconductive support having thereon a photosensitive layer, wherein the photosensitive layer contains a compound represented by the following formula (1): (wherein R1 represents a group having a chiral center, R2 represents a hydrogen atom, an alkyl group which may have a substituent, or an aryl group which may have a substituent, R3 and R4 each independently represents an alkylene group which may have a substituent, or an arylene group which may have a substituent, and R5, R6, R7 and R8 each independently represents an alkyl group which may have a substituent, or an aryl group which may have a substituent, and at least one member of R5 to R8 is an aryl group having a substituent).

Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Abstract: The semiconductor device 100 includes a multilayer wiring structure formed on the semiconductor substrate. The multilayer wiring structure includes at least a first inter layer dielectric film 120 in which interconnects 124 are formed, and at least a second inter layer dielectric film 122 in which vias 126 are formed. The multilayer wiring structure includes a circuit region 110 in which the interconnects 124 and the vias 126 are formed, a seal ring region 112 formed around the circuit region 110 and in which seal rings surrounding the circuit region 110 in order to seal the circuit region 110 are formed, and a peripheral region 114 formed around the seal ring region 112. The semiconductor device 100 further includes dummy vias 136 formed of a metal material, formed in the second interlayer dielectric film 122 at the peripheral region 114.

Abstract: A designing method of a semiconductor device is achieved by setting interconnection reference data indicating permissible interconnection widths which are discrete, and a permissible interval between adjacent two of interconnections, the interconnection intervals being discrete; and by specifying an interconnection relating an impermissible width and interconnections relating to an impermissible interval from the interconnections for a semiconductor device based on the interconnection data. The permissible widths and the permissible intervals are preferably equal to or larger than a minimum design dimension.