Abstract: An intermediate film 222 in a three-layered resist film 225 is formed by the chemical vapor deposition process at a temperature not higher than 300° C., using Si(OR1)(OR2)(OR3)(OR4) , where each of R1, R2, R3 and R4 independently represents a carbon-containing group or a hydrogen atom, excluding the case where all of R1 to R4 are hydrogen atoms.

Abstract: Mechanical strength and moisture resistance of a multilayer interconnect structure is to be improved. A semiconductor device includes a circuit region and a seal ring region formed around the circuit region, on a semiconductor substrate. The seal ring region includes a plurality of interconnect layers including interconnect lines and a plurality of via layers including a plurality of slit vias stacked on one another, and a pitch between the slit vias in at least one of the via layers (lower or middle layer) is different from a pitch between the slit vias in other via layers (upper layer).

Abstract: A subject for the invention is to provide an electrophotographic photoreceptor which has high durability in exposure to ozone, NOx, etc., is excellent in mechanical properties including printing durability, wearing resistance, scratch resistance, and slip properties in repetitions of use, and further has excellent electrophotographic properties. The invention relates to an electrophotographic photoreceptor comprising an electro conductive substrate and at least a photosensitive layer formed thereover, characterized in that the photosensitive layer contains at least a polyarylate resin and an amine compound represented by a specific structure.

Abstract: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Abstract: The semiconductor device 100 includes a multilayer wiring structure formed on the semiconductor substrate. The multilayer wiring structure includes at least a first inter layer dielectric film 120 in which interconnects 124 are formed, and at least a second inter layer dielectric film 122 in which vias 126 are formed. The multilayer wiring structure includes a circuit region 110 in which the interconnects 124 and the vias 126 are formed, a seal ring region 112 formed around the circuit region 110 and in which seal rings surrounding the circuit region 110 in order to seal the circuit region 110 are formed, and a peripheral region 114 formed around the seal ring region 112. The semiconductor device 100 further includes dummy vias 136 formed of a metal material, formed in the second interlayer dielectric film 122 at the peripheral region 114.

Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.

Abstract: An electrophotographic photoreceptor comprising an electroconductive substrate and at least a photosensitive layer formed on the substrate, wherein the photosensitive layer contains a carrier generation material having a sensitivity in a near-infrared wavelength region and a coloring matter having no substantial sensitivity in a visible light region and a near-infrared wavelength region.

Abstract: The disclosure describes an electrophotographic copying process for reversal development using a laminate-type electrophotographic photoreceptor having laminated on an electroconductive support a charge generation layer containing a phthalocyanine compound and a charge transport layer, and capable of forming plural copies of image, comprising at least charging step, image exposing step, developing step, transferring step and charge erasing step by light, wherein the charge erasure by light is not conducted in image formation by the first rotation of photoreceptor and is conducted in image formation by the second and succeeding rotations of photoreceptor.

Abstract: Disclosed herein are an image-forming process which comprises steps of:uniformly charging a latent image carrier by a charging member disposed in contact with or in close vicinity to the latent image carrier,forming a latent image pattern on the latent image carrier by exposure,developing the formed latent image pattern with a developer composed of image-developing particles and conductive particles having an average particle size of smaller than that of said image-developing particles, thereby transferring at least said image-developing particles in the developer to the latent image carrier, andtransferring the image-developing particles transferred to the latent image carrier, to a transfer material; a developer for use in the image-forming process; and an image-forming system.

Abstract: Disclosed herein are an electrostatic developer comprising image-forming particles which are magnetic, conductive particles having an average particle size of not more than that of the image-forming particles and more than 0.1 .mu.m, and particles obtainable by subjecting insulative inorganic oxide particles having a frictional charging polarity opposite to that of the image-forming particles to a hydrophobic treatment with silicone; and an electrostatic developing method in which the developer is used.

Abstract: An image readout device having a plurality of readout elements for converting image into electrical signals, each element having a photoconductive layer and a pair of electrodes which contact the photoconductive layer, and between which the layer is disposed. The photoconductive layer contains a charge generation material and a charge transport material. Oxytitanium phthalocyanine is used as the charge generation material.