Abstract: An image processing device includes a determination unit configured to determine a type of autophagy induced in a cell, based on information indicative of autophagic activity in the cell present in a cell image in which the cell is image captured and based on information indicative of congestion of molecules in the cell present in the cell image.

Abstract: A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

Abstract: A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

Abstract: A hard coating comprising a lower layer formed by an fcc-based titanium aluminum nitride coating, and an upper layer formed by an aluminum nitride coating having an hcp crystal system, the upper layer having a columnar crystal structure, the columnar crystals having an average transverse cross section diameter of 0.05-0.6 ?m, and a ratio of an X-ray diffraction peak value Ia(002) of (002) planes to an X-ray diffraction peak value Ia(100) of (100) planes in the upper layer meeting the relation of Ia(002)/Ia(100)?6.

Abstract: A titanium aluminum nitride coating having a columnar crystal structure, which is formed on a substrate, comprises high-Al TiAlN having an fcc structure, which has a composition represented by (Tix1, Aly1)N, wherein x1 and y1 are numbers meeting x1=0.005-0.1, and y1=0.995-0.9 by atomic ratio, and network-like, high-Ti TiAlN having an fcc structure, which has a composition represented by (Tix2, Aly2)N, wherein x2 and y2 are numbers meeting x2=0.5-0.9, and y2=0.5-0.1 by atomic ratio; the high-Al TiAlN being surrounded by the network-like, high-Ti TiAlN.

Abstract: A hard coating comprising a lower layer formed by an fcc-based titanium aluminum nitride coating, and an upper layer formed by an aluminum nitride coating having an hcp crystal system, the upper layer having a columnar crystal structure, the columnar crystals having an average transverse cross section diameter of 0.05-0.6 ?m, and a ratio of an X-ray diffraction peak value Ia(002) of (002) planes to an X-ray diffraction peak value Ia(100) of (100) planes in the upper layer meeting the relation of Ia(002)/Ia(100)?6.

Abstract: A titanium aluminum nitride coating having a columnar crystal structure, which is formed on a substrate, comprises high-Al TiAlN having an fcc structure, which has a composition represented by (Tix1, Aly1)N, wherein x1 and y1 are numbers meeting x1=0.005-0.1, and y1=0.995-0.9 by atomic ratio, and network-like, high-Ti TiAlN having an fcc structure, which has a composition represented by (Tix2, Aly2)N, wherein x2 and y2 are numbers meeting x2=0.5-0.9, and y2=0.5-0.1 by atomic ratio; the high-Al TiAlN being surrounded by the network-like, high-Ti TiAlN.

Abstract: A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.

Abstract: A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.

Abstract: A lower back supporter including a pair of flat anchor parts that come into contact with the lower back of a wearer with a specified space in between, a pair of anchor belts that wrap around the abdomen with the end portions connected to each other, a first and second support belt that cross over each other on the back, and a connecting belt that connects the anchor parts. The inner side surface of the anchor part comprising a non-slip material that closely contacts the skin of the wearer, and the outer side surface comprising a material that fastens to surface fasteners. After the anchor belts are put on, operation belts connected to the first and second support belts are pulled, the surface fasteners are fastened to the outer side surfaces of the anchor parts, applying tensile force between the anchor parts in closely contact to the lower back.

Abstract: A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1?<tOP<2?, and so as to make (t1×n1)/(t2×n2) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×109/cm3. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.

Abstract: A lower back supporter including a pair of flat anchor parts that come into contact with the lower back of a wearer with a specified space in between, a pair of anchor belts that wrap around the abdomen with the end portions connected to each other, a first and second support belt that cross over each other on the back, and a connecting belt that connects the anchor parts. The inner side surface of the anchor part comprising a non-slip material that closely contacts the skin of the wearer, and the outer side surface comprising a material that fastens to surface fasteners. After the anchor belts are put on, operation belts connected to the first and second support belts are pulled, the surface fasteners are fastened to the outer side surfaces of the anchor parts, applying tensile force between the anchor parts in closely contact to the lower back.

Abstract: To provide a steering device for tilt and telescopic adjustments in which the locked condition can be made stronger, and when unlocked, tilt and telescopic adjustment can be smoothly carried out. A steering device, comprising: a fixed bracket having fixed side parts on both sides in the width direction; a movable bracket arranged between the fixed side parts; a friction plate fixed and oppositely arranged with a suitable gap with respect to at least one of the two fixed side parts of the fixed bracket; and a friction washer that is inserted between the fixed side part and the friction plate. A lock bolt passes through for connecting the fixed bracket, the movable bracket, the friction plate, and the friction washer to be freely locked and unlocked.

Abstract: There is provided a brazing method which makes it possible to rationally perform not only the brazing between a metal member such as a stator made of a magnetic material and a metal member such as a guide pipe made of a non-magnetic material but also the magnetic annealing of these metal members. By making use of a brazing material (90) which can be fused at a lower temperature than a magnetic annealing temperature of metal member (33), the metal member such as a stator made of a magnetic material and the metal member (35) such as a guide pipe made of a non-magnetic material are heated to a predetermined temperature in a furnace to perform the magnetic annealing of the metal member (33) concurrent with the brazing of these metal members.

Abstract: The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

Abstract: A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1?<tOP<2?, and so as to make (t1×n1)/(t2×n2) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×109/cm3. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.

Abstract: The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

Abstract: To provide a steering device for tilt and telescopic adjustments in which the locked condition can be made stronger, and when unlocked, tilt and telescopic adjustment can be smoothly carried out. A steering device, comprising: a fixed bracket having fixed side parts on both sides in the width direction; a movable bracket arranged between the fixed side parts; a friction plate fixed and oppositely arranged with a suitable gap with respect to at least one of the two fixed side parts of the fixed bracket; and a friction washer that is inserted between the fixed side part and the friction plate. A lock bolt passes through for connecting the fixed bracket, the movable bracket, the friction plate, and the friction washer to be freely locked and unlocked.

Abstract: There is provided a brazing method which makes it possible to rationally perform not only the brazing between a metal member such as a stator made of a magnetic material and a metal member such as a guide pipe made of a non-magnetic material but also the magnetic annealing of these metal members. By making use of a brazing material (90) which can be fused at a lower temperature than a magnetic annealing temperature of metal member (33), the metal member such as a stator made of a magnetic material and the metal member (35) such as a guide pipe made of a non-magnetic material are heated to a predetermined temperature in a furnace to perform the magnetic annealing of the metal member (33) concurrent with the brazing of these metal members.