Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]*j*H(Tg)*t (I), y?1.58*10?4*(22.

Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

Abstract: The present disclosure relates to an information processing device and an information processing system which enable management of acquisition of a content and use of an acquired content. A content acquired in a content acquisition permission area and ticket identification information associated with the content and configured to identify a ticket for entering the content acquisition permission area are supplied to an external device. Whether or not to permit use of a content is determined on the basis of user-related information that is information regarding a user corresponding to ticket identification information associated with the content acquired in a content acquisition permission area and configured to identify a ticket for entering the content acquisition permission area. The present disclosure can be applied to, for example, an image processing device, an information processing device, an imaging device, an electronic device, an information processing method, a program, and the like.

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm?3 or more, and the concentration of the hydrogen element is 1×1019 cm?3 or more.

Abstract: Image processing apparatuses and information processing systems are disclosed. In one example, user information is generated on condition that a session is being established with a provision destination of a captured image, and the user information is provided to an information processing device that stores imaging location information. Alternatively, acquisition of imaging location information is permitted on the basis of permission information obtained from a provision destination on the condition that a session is being established with the provision destination of a captured image, the imaging location information provided from the information processing device associated with an imaging location is acquired in the permitted state, and the imaging location information and the user information are provided to an external device that verifies the user information.

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm?3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “?”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1?k*H(Ts)]/[k*H(Ts)?j*H(Tg)]j*H(Tg)*t (I), y?1.58*10?4*(22.

Abstract: A group Ill nitride crystal manufacturing apparatus includes a raw material chamber generating a group Ill elemental oxide gas, and a growth chamber allowing the group Ill element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element- containing gas between the seed substrate and an exhaust port for discharging the unreacted group Ill oxide gas and the nitrogen element-containing gas.

Abstract: A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.

Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Abstract: An orientation detection device obtains a detection information of a sensor that detects a displacement in the vertical direction occurring in the vehicle, computes a pitch angle of the vehicle on the basis of the detection information, obtains a gradient information indicating a gradient of a road on which the vehicle travels, and corrects a correlation between the detection information used in computation and the pitch angle on the basis of the gradient information.

Abstract: An object detection device acquires a plurality of images captured by a camera mounted in a moving body and acquires movement information of the camera. The object detection device extracts an edge from a first image among the acquired images. The object detection device calculates a plurality of candidate points corresponding to the edge in a second image, based on the movement information and calculates candidate points corresponding to a plurality of heights as height candidates of the edge. The object detection device calculates a correlation index value between the edge and each of the plurality of candidate points and detects the candidate point with the largest correlation as a correspondence point of the edge. The object detection device detects an object at a position of the edge when the correlation index value of the detected correspondence point is equal to or smaller than a predetermined threshold.

Abstract: A display control device controls display of a virtual image which is superimposed on foreground of a vehicle by projection of a display light image from an optical unit to a projection area. The display control device sets a projection position of the display light image which is projected in the projection area on the basis of a relative position of a superimposition object on which the virtual image is superimposed, obtains a measurement information from one vehicle height sensor measuring a displacement in a vertical direction occurring in the vehicle, obtains a gradient information indicating a gradient of a road on which the vehicle travels on the basis of three-dimensional map data, and corrects the projection position of the display light image on the basis of the measurement information and the gradient information.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.