Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm?3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm?3 or more, and the concentration of the hydrogen element is 1×1019 cm?3 or more.

Abstract: A display control device for controlling a display position of a virtual image displayed and superimposed on a foreground in a vehicle (A), includes: an information acquisition unit for acquiring state information of the vehicle and extracting attitude change information and vibration information of the vehicle from the state information; a position correction unit for correcting a displacement of the display position of the virtual image with respect to the foreground caused by the attitude change of the vehicle, based on the attitude change information; a rough road determination unit for determining whether a road is a rough road, the road on which the vehicle is traveling or scheduled to travel, based on the vibration information; and a correction suppression unit for suppressing a correction control of the display position executed by the position correction unit and continuing to display the virtual image, based on a rough road determination.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

Abstract: An orientation detection device obtains a detection information of a sensor that detects a displacement in the vertical direction occurring in the vehicle, computes a pitch angle of the vehicle on the basis of the detection information, obtains a gradient information indicating a gradient of a road on which the vehicle travels, and corrects a correlation between the detection information used in computation and the pitch angle on the basis of the gradient information.

Abstract: A display control device controls display of a virtual image which is superimposed on foreground of a vehicle by projection of a display light image from an optical unit to a projection area. The display control device sets a projection position of the display light image which is projected in the projection area on the basis of a relative position of a superimposition object on which the virtual image is superimposed, obtains a measurement information from one vehicle height sensor measuring a displacement in a vertical direction occurring in the vehicle, obtains a gradient information indicating a gradient of a road on which the vehicle travels on the basis of three-dimensional map data, and corrects the projection position of the display light image on the basis of the measurement information and the gradient information.

Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Abstract: A sensor calibration device acquires a measured value of an attitude of a vehicle based on an output of an attitude sensor, acquires vehicle speed information indicating a traveling speed of the vehicle, acquires map information on a road on which the vehicle travels, and sets a calibration value applied to the measured value to cause a calculated position of the vehicle calculated based on the vehicle speed information and the measured value to come close to a reference position indicated in the map information.

Abstract: An object detection device acquires a plurality of images captured by a camera mounted in a moving body and acquires movement information of the camera. The object detection device extracts an edge from a first image among the acquired images. The object detection device calculates a plurality of candidate points corresponding to the edge in a second image, based on the movement information and calculates candidate points corresponding to a plurality of heights as height candidates of the edge. The object detection device calculates a correlation index value between the edge and each of the plurality of candidate points and detects the candidate point with the largest correlation as a correspondence point of the edge. The object detection device detects an object at a position of the edge when the correlation index value of the detected correspondence point is equal to or smaller than a predetermined threshold.

Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

Abstract: A display control device for controlling a display position of a virtual image displayed and superimposed on a foreground in a vehicle (A), includes: an information acquisition unit for acquiring state information of the vehicle and extracting attitude change information and vibration information of the vehicle from the state information; a position correction unit for correcting a displacement of the display position of the virtual image with respect to the foreground caused by the attitude change of the vehicle, based on the attitude change information; a rough road determination unit for determining whether a road is a rough road, the road on which the vehicle is traveling or scheduled to travel, based on the vibration information; and a correction suppression unit for suppressing a correction control of the display position executed by the position correction unit and continuing to display the virtual image, based on a rough road determination.

Abstract: Provided is a signal processing device including a control information acquiring unit configured to acquire image control information regarding control of an image, an image receiver configured to selectively receive one or more images transmitted using multicast based on the image control information, one or more image processing units configured to perform an image process on an image received by the image receiver based on the image control information, and an image sender configured to transmit an image subjected to the image process by the image processing unit based on the image control information, the image being transmitted using multicast.