Abstract: Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a III-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.

Abstract: Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a Ill-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.