Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: A photographic printer for printing negative images on a negative film onto photographic paper. The printing direction can be changed over between "lateral" and "longitudinal" without changing the feed direction of the negative film. A reflecting mirror is inclined by 45.degree. with respect to the optical axis of the light emitted from a light source to the negative film and is supported to be rotatable about the optical axis. A driving unit is provided to rotate the reflecting mirror by 90.degree. about the optical axis between a reference position and a second position. Exposure stages are provided on the optical axes of the light beams reflected by the reflecting mirror when the mirror is in its reference position and second position, respectively. The photographic paper is guided through the exposure stages. According to the position of the mirror, negative images are printed on the paper at one of the two exposure stages.

Abstract: A photographic printing apparatus having a single light source and a reflecting mirror. The mirror is provided between the light source and the light-modulating device having light-modulating filters, a mirror tunnel and diffusers and has a light-passing portion. Most part of the light from the light source is reflected by the mirror and used for exposing negative films after passing it through the light-modulating device. The remainder of the light from the light source passes through the light-passing portion and is used for scanning.

Abstract: A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Abstract: In a semiconductor integrated circuit device having at least three conductor layers, a connection hole for the lower conductor layer and the upper conductor layer can be formed in self-alignment to the intermediate conductor layer after flattening the underlying insulation film for the upper conductor layer and deterioration of the insulation withstand voltage between the upper conductor layer and the intermediate conductor layer can be prevented.

Abstract: A method of operating an air-supplied type coating booth in which conditioned air supplied from an air supply blower is enforced downwardly to the inside of a tunnel-shaped coating booth and the air in the coating booth is drawn together with paint mists and the likes down to the beneath of a booth floor by way of an air exhaust blower comprises the steps of detecting the flow velocity of air streams flowing into or out of inlet and the exit of the coating booth, applying primary and secondary averaging processings for signals for averaging variations caused by external disturbances fluctuating at relatively shorter and longer periods of time, judging the thus averaged direction and the flow velocity of the air streams at the inlet and the exit, variably controlling the flow rate of exhaust from the exhaust blower in accordance with the direction and the flow velocity.

Abstract: A method of operating an air-supplied type coating booth adapted to enforce conditioned air by an air supply blower through a filter downwardly to the inside of a tunnel-shaped coating booth at a predetermined flow velocity and then drawn to discharge together with coating mists, etc. to the beneath of the floor comprises the step of detecting the flow velocity of conditioned air flowing through the filter to the inside of continuously, applying primary and secondary averaging processings for the detected signals containing variations fluctuating at relatively shorter and longer periods respectively, comparing the value obtained from the signals applied with the secondary averaging processing with a predetermined flow velocity value and variably controlling the flow rate of the air supplied from the air supply blower depending on the deviation and thereby maintaining the flow velocity of the conditioned air flowing to the inside of the coating booth always constant.

Abstract: A method of operating an air-supplied type coating booth in which conditioned air is enforced from an air supply blower downwardly to the inside of a coating booth and then discharged to the beneath of the booth floor by an exhaust blower, in which the booth operation is stopped after memorizing the balanced flow rates for the supply blower and the exhaust blowers kept just before the completion of the booth operation, and the supply blower and the exhaust blower are automatically set to the above-mentioned balanced flow rates respectively upon re-starting the booth operation again. Balanced and stable booth operation where no air streams flow into or out of the inlet and the exit can be attained rapidly at the start of the booth operation.

Abstract: An apparatus for coating by electrodeposition a workpiece immersed in a reservoir containing coating material to be electro-deposited wherein the workpiece is set for a first electrode, and a second electrode is disposed along side wall and the bottom of the reservoir for effecting electrodeposition coating on the workpiece by applying DC voltage across the first and second electrodes. The second electrode is consisted of a plurality of conductive rods supported by supporting members at a predetermined height from the bottom of the reservoir. The conductive rods are disposed at a predetermined interval.

Abstract: An electrode of a metal oxide sintered mass, comprising: an electrode body having therein a metal member as a core the outer circumference of which is covered with an electroconductive material and a metal oxide sintered mass; and a sheathed lead wire joined to said electrode body, the joint therebetween being covered with a resin.

Abstract: An electrode of a metal oxide sintered mass, comprising: an electrode body having therein a metal member as a core the outer circumference of which is covered with an electroconductive material and a metal oxide sintered mass; and a sheathed lead wire joined to said electrode body, the joint therebetween being covered with a resin.

Abstract: In order to suppress the Barkhausen oscillation previously observed in fluorescent display tubes, the electron-stream transmission of the grid electrode is controlled by shielding regions of solid or fine mesh form provided in each of the grid meshes in opposing relationship to the exposed insulating portions of the anode substrate lying within the corresponding set of anode segments, which are arranged in a pattern of substantially figure-of-eight configuration.

Abstract: In a Static Induction Transistor Logic (or an Integrated Injection Logic) semiconductor device having a lateral PNP transistor used as an injector and a longitudinal field effect transistor (or a longitudinal NPN transistor) used as a driving transistor, a collector of a transistor for a level-converter which converts a signal level from an upper layer or first logic level to a lower layer or second logic level is connected to a gate (or a base) of a driving transistor placed in the lower layer through a current limiting element integrated on the same chip to effectively use an injection current in a signal-level converting circuit used in a Static Induction Transistor Logic or in an Integrated Injection Logic which is constructed by using a laminated circuit construction.