Abstract: An object of the present invention is to provide washing liquid for semiconductor substrate capable of removing grinding grains of silica, alumina or the like in a polishing agent and polishing trashes of copper, and capable of leaving little organic substance due to an additive used for preventing corrosion of copper on the surface of a copper wiring after washing, while corrosion of copper is suppressed, and a method of producing a semiconductor device using this washing liquid. The object is achieved by washing liquid for a semiconductor substrate having a copper wiring, comprising a basic compound and at least one selected from the group consisting of sugar alcohols and saccharides.

Abstract: An electrode having a thermoplastic resin having gas permiability and a metal (3b) supported in a three-dimensional matrix form; an electrolyte composite having an electrolyte membrane (1) and a pair of electrodes (3), the electrodes (3) comprising a porous thermoplastic resin having gas permiability and a metal (3b) supported in a three-dimensional matrix form; a method of manufacturing an electrode (3) comprising plating a metal coating on surfaces of numerous particles (3a) of a thermoplastic resin, and pressurizing the particles; and a method of manufacturing an electrolyte composite having an electrolyte membrane (1), and a pair of electrodes (3), comprising manufacturing the electrodes (3) by plating a metal coating on surfaces of numerous particles (3a) of a thermoplastic resin and pressurizing the particles, and joining the electrolyte membrane (1) through the catalyst to one surface of each electrode and joining the electrolyte membranes, or joining the electrodes (3) through the catalysts (2) to opp

Abstract: Numerous particles of thermoplastic resin supporting a metal on surfaces thereof are joined together by pressure welding. The metal is supported in a three-dimensional matrix on the group of joined particles.

Abstract: (Object) To provide a new electronic parts cleaning solution that inhibits the corrosion of silicon or metals other than the silicon, and that efficiently cleans off fine dust or organic matters adhered on the surface of electronic parts, and that does not have white turbidity easily. (Solution) An electronic parts clearing solution which is characterized in containing an anionic surfactant, hydroxide, metal corrosion inhibitor, water, and a nonionic surfactant represented by formula (I) and/or a nonionic surfactant represented by formula (II): HO-((EO)x—(PO)y)z—H ??(I) R-[((EO)a—(PO)b)c—H]m ??(II) (EO is an oxyethylene group, and PO is an oxypropylene group. x and y, and a and b are positive number, which x(x+y) and a(a+b) are 0.05 to 0.5 respectively, and z and c are positive integers. R is a residue group wherein hydrogen atoms are removed from hydroxyl group of alcohol or amine represented by a group having valency of 1˜4).

Abstract: (Problem) It is to provide a stripper having excellent ability to suppress corrosion or damage to the copper wiring or the low-k film, and having excellent photoresist residue removability after ashing. (Solution) The invention provides a photoresist stripper composition characterized in containing salts of at least two different inorganic acids, surfactants and a corrosion inhibitor for metal, and having a pH in the range of 3-10; and a process for preparation of semiconductor devices characterized in that the photoresist residues generated during the preparation of semiconductor devices which employs copper or a copper-dominant alloy as the material for wiring is stripped using said photoresist stripper.

Abstract: (Problem) Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or the Low-k film, and which has excellent property of removing ashed photoresist residues. (Solution) The invention provides a photoresist stripper (hereinafter, referred to as the stripper of the invention) characterized in containing a tertiary amine compound, an alkaline compound, a fluoro compound and an anionic surfactant; and a process for preparation of semiconductor devices using the stripper of the invention.

Abstract: A stripping composition comprising at least one of alcohols having an ether-bond in the molecule thereof as component (a), and an anticorrosive as component (b). Furfuryl alcohol or tetrahydrofurfuryl alcohol is preferable as component (a).

Abstract: An object of the present invention is to provide a metal polishing composition which can polish a metal such as Cu and Ta at a high speed, has a higher efficiency of washing for a hydrophobic low dielectric constant film, and is excellent stability without precipitation of a polishing particle during storage (excellent in stability for storing). The object is achieved by a metal polishing composition comprising an anionic surfactant having 2 or more anionic functional groups in a molecule, a polishing abrasive, an inorganic salt, and water.

Abstract: An abrasive for metal having particle that have a functional group capable of trapping a metal ion, a process for producing the abrasive, and a polishing composition having the abrasive, an oxidizing agent and water, are provided.

Abstract: A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:

Abstract: The present invention provides a washing liquid for a semiconductor substrate having a pH of 6 to 12 and comprising a chelating agent and a chelate accelerating agent.

Abstract: An object of the present invention is to provide washing liquid for semiconductor substrate capable of removing grinding grains of silica, alumina or the like in a polishing agent and polishing trashes of copper, and capable of leaving little organic substance due to an additive used for preventing corrosion of copper on the surface of a copper wiring after washing, while corrosion of copper is suppressed, and a method of producing a semiconductor device using this washing liquid. The object is achieved by washing liquid for a semiconductor substrate having a copper wiring, comprising a basic compound and at least one selected from the group consisting of sugar alcohols and saccharides.

Abstract: A cleaning agent for a semiconductor device contains a hydroxide, water and a compound expressed in the following general formula (I) and/or the following general formula (II): HO—((EO)x—(PO)y)z—H  (I) R—[(EO)x—(PO)y)z—H]m  (II) Thus provided is a cleaning agent for a semiconductor device, which is so improved as not to disconnect a wire or an embedded conductive layer.

Abstract: A stripping composition comprising at least one of alcohols having an ether-bond in the molecule thereof as component (a), and an anticorrosive as component (b). Furfuryl alcohol or tetrahydrofurfuryl alcohol is preferable as component (a).

Abstract: An electronic parts cleaning solution comprising a hydroxide, water, metal corrosion inhibitor, and at least one compound represented by the following general formula (I) or (II): HO—((EO)x-(PO)y)z-H  (I) wherein, EO represents an oxyethylene group, PO represents an oxypropylene group, x and y represent integers satisfying the relation: x/(x+y)=0.05 to 0.4, and z represents a positive integer, R—[((EO)x-(PO)y)z-H]m  (II) wherein, EO, PO, x, y and z are the same as in the general formula (I), R represents a residual group obtained by removing a hydrogen atom on a hydroxyl group of alcohol or amine having a hydroxyl group, or a residual group obtained by removing a hydrogen atom on an amino group of amine, and m represents an integer of 1 or more.

Abstract: A metal polishing pad having a functional group which captures a metal ion, a polishing apparatus comprising an apparatus of contacting a polishing subject having a metal surface with the confronting polishing pad according to claim 1 and applying pressure uniformly between them, an apparatus of rotating or transferring a polishing subject and a polishing pad while maintaining contact between them, and an apparatus of feeding a polish promoting agent for promoting polishing into between a polishing subject and a polishing pad, and a method for polishing a metal by chemical mechanical polishing with the metal polishing apparatus.

Abstract: An electronic parts cleaning solution comprising a hydroxide, water, metal corrosion inhibitor, and at least one compound represented by the following general formula (I) or (II):

Abstract: A cleaning liquid for cleaning a substrate having, on its surface, a plurality of exposed insulating films comprising silicon dioxide containing impurities in different concentrations, which comprises an organic alkaline amine compound and hydrogen peroxide. After cleaning with such a cleaning liquid, no step is formed between the insulating films containing impurities in different concentrations.

Abstract: A hydrogen storage material is disclosed with no collapse due to pulverization of hydrogen storage alloy particles by repeated hydrogen absorption and desorption thereby permitting repeated use while manifesting excellent electric and thermal conductivities. Pressure molding of hydrogen storage alloy particles, each being covered with a plated metal film having microgranules of a thermoplastic resin, at a temperature higher than a glass transition temperature or a melting point of and below a thermal decomposition temperature of the thermoplastic resin can produce a porous hydrogen storage material of hydrogen storage alloy particles being bonded to each other via the thermoplastic resin. The hydrogen storage material can become firm and strong because the plated metal films covering the hydrogen storage alloy particles are clasped with each other complexly.

Abstract: According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20 % by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.