Abstract: To provide a drive device for a self-propelled elevator which is capable of moving a car in a vertical direction and a horizontal direction with a simple configuration. The drive device for a self-propelled elevator includes: a rotating body which is rotatably coupled to a back face of a cab; and wheels which are provided on the rotating body so as to sandwich guide surfaces of a rail on a back face side of the cab, which generate, by friction between the wheels and the rail, a force that moves the cab in a vertical direction when a longitudinal direction of the rail is the vertical direction, and which generate, by a friction force between the wheels and the rail, a force that moves the cab in a horizontal direction when the longitudinal direction of the rail is the horizontal direction.

Abstract: One object of the present invention is to provide a method or apparatus for purifying target particles from high-concentration particles in a short time. The above problem can be solved by a method for purifying target particles, characterized in that the method comprises a step of sorting the target particles from a high concentration of non-target particles, wherein the sorting step is repeated for three times or more.

Abstract: Upon receiving a copy of upstream communication from a first switch, a second switch specifies an NF apparatus serving as a transmission source of the upstream communication, based on apparatus information indicating a MAC address of each apparatus and a transmission source MAC address contained in the copy of the upstream communication. The second switch refers to the apparatus information, and MAC address information indicating, for each port of the switch, a MAC address of an apparatus connected via the port, thereby specifying a port of the second switch connected to the NF apparatus, and a MAC address of the transmission source via the port. The second switch stores session information in which information on the specified port and MAC address is associated with header information set for the copy of the upstream communication. Upon receiving downstream communication, the second switch transfers the downstream communication to the NF apparatus.

Abstract: A vacuum pump and a control device, on a pump side, performs heater control of a pipe to suppress precipitation of a deposit from a process gas and cooling control of a deposit trap to remove the deposit, and perform heater control and cooling control the process gas situation. A temperature sensor is disposed on an outer periphery or an inner periphery of an introduction pipe 3H, outputs temperature information a control device. Temperature information from the inside of a deposit trap is also sent to control device. The control device, performs ON/OFF control a heater such that a temperature of the introduction pipe 3H has a predetermined temperature value, based on the input temperature information 31. The control device, performs opening/closing control on a valve such that an internal temperature of the deposit trap has a predetermined cooling temperature value, based on the input temperature information.

Abstract: The present invention relates to a RET fusion gene such as a CCDC6-RET fusion gene as a biomarker to monitor the activity of the compound 3-Z-[1-(4-(N-((4-methyl-piperazin-1-yl)-methylcarbonyl)-N-methyl-amino)-anilino)-1-phenyl-methylene]-6-methoxycarbonyl-2-indolinone or a pharmaceutically acceptable salt thereof, and especially its monoethanesulphonate salt form, when used alone or optionally in combination with further pharmaceutically active ingredients and/or further treatments. The present invention also relates to specific uses of said specific compound in the treatment of cancers.

Abstract: A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.

Abstract: A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

Abstract: A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.