Abstract: A flow passage structure includes a member. The member includes a plurality of first openings, a plurality of second openings, a flow passage, and a plurality of joining and branching parts. The flow passage connects the first openings with the second openings. The joining and branching parts are provided in the flow passage and each have a plurality of first parts having respective first ends connected with each other and a plurality of second parts having respective second ends connected with each other. The second parts are closer to the second openings than the first parts are, in a path between the first opening and the second opening. The first ends are connected with the second ends in each joining and branching part.

Abstract: Disclosed herein is a power feeding device including: power transmitting section which transmits electric power by way of a magnetic field; a set of first and second electrodes which are spaced from each other; a power supply which applies a voltage between the first and second electrodes; and a detector which detects whether foreign matter is present on the power transmitting section or not based on the voltage applied by the power supply.

Abstract: Provided is a compound represented by formula (I) or a pharmacologically acceptable salt thereof: wherein L1 is an optionally substituted C1-6 alkylene group or the like, L2 is a single bond or the like, L3 is a single bond or the like, R1, R2, and R3 are each independently an optionally substituted C1-4 alkyl group or the like, R4 is a hydrogen atom or the like, and R5 is a hydrogen atom or the like.

Abstract: According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

Abstract: An additive manufacturing apparatus according to an embodiment includes an acquirer, a generator, and an additive manufacturing unit. The acquirer acquires, from three-dimensional shape data, shape data of each layer in a predetermined thickness to be added for manufacturing an object. The generator generates, from the shape data of each layer, layer modeling data representing a cross-sectional shape of modeling data having a lattice structure converted from the inside of the object generated from the three-dimensional shape data. The additive manufacturing unit forms each layer in the predetermined thickness and adds the layers for manufacturing the object, in accordance with the layer modeling data generated by the generator.

Abstract: According to one embodiment, a material feeding device includes a feeding unit. The feeding unit includes an electrode unit electrically chargeable by application of voltage thereto and an insulating unit covering the electrode unit, the electrode unit being configured to attract and separate a material to and from a surface of the insulating unit by control of a charged state of the electrode unit.

Abstract: A branching structure according to an embodiment includes an introduction path part and branch path parts. The introduction path part includes an introduction path extending in a first direction. The branch path part includes parallel branch paths. The branch paths each include an upstream section extending in a second direction intersecting with the first direction and a downstream section extending in the first direction. The branch paths continue into the introduction path or upstream branch paths. In each of the branch path parts, the numbers of the upstream sections up to the branch paths are the same. The branch path parts more downstream have a larger number of downstream sections.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first and second gate electrode layers, an inter-layer insulating layer, a channel layer, a tunneling insulating layer, first and second charge storage portions, and a blocking insulating layer. The channel layer is separated from the first and second gate electrode layers, and the inter-layer insulating layer. The tunneling insulating layer is provided between the first gate electrode layer and the channel layer. The first charge storage portion is provided between the first gate electrode layer and the tunneling insulating layer. The second charge storage portion is provided the second gate electrode layer and the tunneling insulating layer. The blocking insulating layer is provided between the inter-layer insulating layer and the tunneling insulating layer, between the first gate electrode layer and the first charge storage portion, between the inter-layer insulating layer and the first charge storage portion.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer, a first electrode, first to third layers, and nitride portions of nitride molecules. The first layer is provided between the semiconductor layer and the first electrode. The second layer is provided between the first layer and the first electrode. The second energy of a conduction band edge of the second layer is lower than a first energy of a conduction band edge of the first layer. The second layer includes a first region and a second region. The first region is provided between the first layer and the second region. The third layer is provided between the second layer and the first electrode. The third energy of a conduction band edge of the third layer is higher than the second energy.

Abstract: A semiconductor memory device includes a semiconductor layer, a stacked body on the semiconductor layer, the stacked body including a first insulating layer and an electrode layer, a channel layer within and extending through the stacked body and electrically connected to the semiconductor layer, a second insulating layer between the channel layer and the electrode layer, a charge storage layer between the second insulating layer and the electrode layer, and a third insulating layer between the charge storage layer and the electrode layer. The third insulating layer includes an insulating film on a side of the charge storage layer and a first dielectric layer on a side of the electrode layer. The first dielectric layer includes a first material, a second material, and oxygen.

Abstract: A nozzle device according to an embodiment includes a first opening, a plurality of second openings, and a first duct part. The first duct part includes at least one first branching part having a first part extending in a first direction and a plurality of second parts connected to a first end of the first part and extending in respective directions intersecting with the first direction. The first duct part connects the first opening and the second openings and is branched at least once by the first branching part in a path extending from the first opening to the second openings. The path lengths and the numbers of first branching parts between the first opening and the respective second openings are the same. The cross-sectional area of the first end of the first part is smaller than the cross-sectional area of a second end of the first part.

Abstract: Provided is an information processing system configured to: receive a plurality of images; select a standard image; search, in extracting partial images for complementing a too bright region/too dark region in the standard image from a reference images, using correction images obtained by subjecting each of the images to multivalued processing for each division of luminance components, for regions having matching shapes of respective regions included in the correction image of the standard image and the correction images of the other images; and complement image portions corresponding to the too bright region and/or too dark region in the correction image of the standard image using image portions, which are matching regions and correspond to appropriately bright regions, to thereby generate a synthetic image.

Abstract: A basis image is converted into a more functional image by image synthesis technology using a number of imaging devices arranged independently of each other. A multocular imaging system is provided with a plurality of imaging parts that can be arranged independently of each other, a similar component search part operable to acquire a basis image outputted from at least one imaging part of the plurality of imaging parts and a reference image outputted from another imaging part of the plurality of imaging parts and to search a similar component included in the reference image for each of components included in the basis image, and an image synthesis part operable to perform a synthesis process on at least one component included in the basis image into a desired image with reference to the similar component extracted by the similar component search part and to output the desired image as a synthesis image.

Abstract: An optical shaping apparatus includes: a light source unit that outputs collimated light; an optical function unit that is disposed on an optical path of the collimated light and modulates the optical path or a phase of the collimated light; and a control unit that controls operation of the optical function unit, to irradiate a target surface with modulated light produced in the optical function unit.

Abstract: The present disclosure relates to a transmission device and a transmission method, a reception device and a reception method, and a program that enable acquisition of accurate location information in an indoor environment. A reception device includes: an intra-body communication reception unit that receives location identification information from another device by a communication method using the human body as the communication medium, the location identification information being for identifying the location of the reception device; a location recognition unit that recognizes the current location of the reception device in accordance with the received location identification information; and a storage unit that stores the recognized current location. The present disclosure can be applied to transmission/reception devices and the like that perform communication by a communication method using the human body as the communication medium.

Abstract: An image processing unit has an image acquisition part, a correlation determination part, a reference image generation part, and an interpolation image generation part. The image acquisition part acquires an original image. The correlation determination unit determines whether the correlation of an image component of a primary reference band with image components of respective bands other than the primary reference band is either high correlation or low correlation. The reference image generation part interpolates missing pixels in the image component of the primary reference band by switching the interpolation method based on the correlation determination result obtained by the correlation determination part. The interpolation image generation part interpolates, using the correlation determination result and the primary reference image, missing pixels in at least some of the image component of the primary reference band.

Abstract: A semiconductor memory device according to an embodiment, includes a stacked body, a semiconductor member, a charge storage layer, a charge block layer and an electrode antioxidant layer. The stacked body includes a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers. The semiconductor member extends in a stacking direction of the stacked body and penetrates the stacked body. The tunnel insulating layer is provided on a side surface of the semiconductor member. The charge storage layer is provided on a side surface of the tunnel insulating layer. The charge block layer is provided on a side surface of the charge storage layer and contains oxygen. The electrode antioxidant layer is provided between the charge block layer and the electrode layer and has a composition different from that of the electrode layer.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a stacked body provided on the substrate, a plurality of electrode films being stacked to be separated from each other in the stacked body, a semiconductor pillar piercing the plurality of electrode films, a first insulating film provided between the semiconductor pillar and the electrode films, a second insulating film provided between the semiconductor pillar and the first insulating film; and a third insulating film provided between the first insulating film and the electrode films. The first insulating film includes silicon, nitrogen, oxygen, and carbon.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; and charge storage film. The stacked body includes the plurality of electrode layers separately stacked each other. The semiconductor body is provided in the stacked body and extends in a stack direction of the stacked body and includes an oxide semiconductor. The charge storage film is provided between the semiconductor body and the plurality of electrode layers.

Abstract: A material feeder in an additive manufacturing apparatus according to one embodiment includes a feeding unit. The feeding unit includes a container capable of containing a powdery material, a first wall that is provided with a plurality of openings communicated with the container and that at least partially covers a region onto which the material is fed, and an opening-closing part capable of individually opening and closing the openings, the feeding unit forming a layer of the material on at least a part of the region by feeding the material inside the container onto the region from at least one of the openings that is opened by the opening-closing part.