Abstract: An optical element includes first and second optical portions, and a first connection region. The first optical portion has first and second surfaces opposed each other. The first optical portion is light transmissive. The second optical portion has a third surface opposing the first surface and separated from the first surface, and a fourth surface on an opposite side to the third surface. The second optical portion is light transmissive. The first connection region connects at least a portion of an end of the first optical portion and at least a portion of an end of the second optical portion, and provides a seamless connection to the first and second optical portions. The first connection region is light transmissive. At least one of the first or second surfaces includes a portion slanted to a plane perpendicular to a first direction from the second optical portion toward the first optical portion.

Abstract: According to one embodiment, a material feeder includes a feeding unit. The feeding unit includes a container that is containable of a powdery material and a first wall that is provided with a plurality of first openings communicated with the container and at least partially covers a region to which the material is fed, the feeding unit feeding the material in the container from the first openings to the region to form a layer of the material.

Abstract: A light irradiation device according to an embodiment is for an additive layer manufacturing apparatus. The light irradiation device includes a light condensing unit and a function unit. The light condensing unit condenses a plurality of first light beams. At least a part of the function unit is positioned at a location among the plurality of first light beams or at a location surrounded by the plurality of first light beams.

Abstract: A method for manufacturing an additive manufactured object according embodiments includes supplying a powdered first material capable of being melted or sintered by irradiation with energy rays; supplying a powdered second material through which the energy rays are transmitted; melting or sintering the first material by irradiation with the energy rays; and solidifying the first material after melting or solidifying the first material by sintering.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a core film, and a stacked film. The stacked body includes a plurality of conductive layers stacked with an insulating layer between the conductive layers. The core film extends in the stacked body in a stacking direction of the stacked body, and includes a metal oxide film having a higher dielectric constant than a dielectric constant of silicon nitride. The stacked film includes a semiconductor film and charge storage film. The semiconductor film is provided between the conductive layers and the core film. The semiconductor film extends in the stacking direction. The charge storage film is provided between the conductive layers and the semiconductor film.

Abstract: A non-volatile semiconductor storage device disclosed in the embodiment has a semiconductor substrate, a first insulating film, a first charge storage film, a second insulating film, a second charge storage film, a third insulating film, and a control electrode. In this non-volatile semiconductor storage device, the first and second charge storage films comprise a metallic material, a semi-metallic material or a semiconductor material. One of the first, second, and third insulating films is a multi-layered insulating film formed by layering multiple insulating films. This non-volatile semiconductor storage device further has a film comprising of any one of an oxide film, nitride film, boride film, sulfide film, and carbide film that is in contact with one interface of the laminated insulating film and contains one type of atom selected from aluminum, boron, alkaline earth metal, and transition metal at a concentration in the range of 1E12 atoms/cm2 to 1E16 atoms/cm2.

Abstract: The present invention allows for a photocurable composition which exhibits stable physical characteristics in a heat resistance test and an oil resistance test, and exhibits good debubbling properties and excellent workability. A photocurable composition including components (A) to (C). component (A): a compound that has a polymer obtained from a (meth)acrylic monomer as a main skeleton, and has at least two (meth)acrylic groups in the molecule component (B): a (meth)acrylic monomer including a component (b-1) and/or a component (b-2) component (b-1): a (meth)acrylic monomer having a hydroxyl group in the molecule, in an amount of 0.1 to 50 parts by mass with respect to 100 parts by mass of the component (A), component (b-2): a (meth)acrylic monomer having a saturated alicyclic skeleton in the molecule, in an amount of 0.1 to 10 parts by mass with respect to 100 parts by mass of the component (A), component (C): a photoinitiator.

Abstract: A device for manufacturing a layered object includes a container, a vibration unit, and an energy beam irradiation unit. The container includes a stage, a wall surrounding the stage, and a lid. The vibration unit vibrates raw material powder to planarize a face of the raw material powder supplied into the container. The energy beam irradiation unit irradiates part of the raw material powder with an energy beam to form part of the layered object. The lid presses the raw material powder when the vibration unit vibrates the raw material powder. A space is formed between the wall and the lid in the container when the lid is in contact with the raw material powder. The raw material powder is allowed to flow into the space.

Abstract: Provided is an information processing system configured to: receive a plurality of images; select a standard image; search, in extracting partial images for complementing a too bright region/too dark region in the standard image from a reference images, using correction images obtained by subjecting each of the images to multivalued processing for each division of luminance components, for regions having matching shapes of respective regions included in the correction image of the standard image and the correction images of the other images; and complement image portions corresponding to the too bright region and/or too dark region in the correction image of the standard image using image portions, which are matching regions and correspond to appropriately bright regions, to thereby generate a synthetic image.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion.

Abstract: A feed unit includes: a power transmission coil provided to perform power transmission with use of a magnetic field; a parallel LC resonance circuit including the power transmission coil; a series LC resonance circuit; an alternating-current signal generating section supplying the parallel LC resonance circuit and the series LC resonance circuit with an alternating-current signal used to perform the power transmission; and a control section controlling the alternating-current signal generating section with use of a predetermined control signal, the control section performing frequency control of the control signal to allow a circuit current that flows upon the power transmission to become smaller.

Abstract: A semiconductor memory device according to an embodiment, includes a stacked body, a semiconductor member, a charge storage layer, a charge block layer and an electrode antioxidant layer. The stacked body includes a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers. The semiconductor member extends in a stacking direction of the stacked body and penetrates the stacked body. The tunnel insulating layer is provided on a side surface of the semiconductor member. The charge storage layer is provided on a side surface of the tunnel insulating layer. The charge block layer is provided on a side surface of the charge storage layer and contains oxygen. The electrode antioxidant layer is provided between the charge block layer and the electrode layer and has a composition different from that of the electrode layer.

Abstract: According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al).

Abstract: According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second chemical element being an chemical element not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system.

Abstract: In the present invention, the two-pack type curable resin composition using a compound having one or more (meth)acrylic groups in the molecule enables both of prolongation of a working life and maintenance of physical properties of a cured product. Prior art had a difficulty in controlling a working life continuously; however, the present invention can easily control the working life and therefore makes it possible to be used in various conditions. Provided is a two-pack type curable resin composition, containing components (A) to (E): component (A) being a compound having one or more (meth)acrylic groups in the molecule thereof; component (B) being hydroperoxide; component (C) being at least one type of copper compound and vanadium compound; component (D) being a compound having 2 to 6 thiol groups in the molecule thereof; and component (E) being saccharin.

Abstract: According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.

Abstract: A basis image is converted into a more functional image by image synthesis technology using a number of imaging devices arranged independently of each other. A multocular imaging system is provided with a plurality of imaging parts that can be arranged independently of each other, a similar component search part operable to acquire a basis image outputted from at least one imaging part of the plurality of imaging parts and a reference image outputted from another imaging part of the plurality of imaging parts and to search a similar component included in the reference image for each of components included in the basis image, and an image synthesis part operable to perform a synthesis process on at least one component included in the basis image into a desired image with reference to the similar component extracted by the similar component search part and to output the desired image as a synthesis image.

Abstract: The present invention provides a high-resolution image generation method which is capable of generating a high-resolution image from multiple low-resolution images having displacements without using an iterative computation. A high-resolution image generation method for generating a high-resolution image from multiple low-resolution images having displacements, comprises a first step of performing a registration processing of multiple low-resolution images; a second step of generating an average image having the undefined pixels and a weighted image based on the displacement information obtained by the registration processing and multiple low-resolution images; and a third step of generating the high-resolution image by estimating pixel values of the undefined pixels included in the average image.

Abstract: According to a nonvolatile memory device including a semiconductor layer, a control electrode, a memory layer provided between the semiconductor layer and the control electrode, a first insulating film provided between the semiconductor layer and the memory layer, and a second insulating film provided between the control electrode and the memory layer. The second insulating film includes a metal oxide having a monoclinic structure.

Abstract: Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.