Abstract: Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.

Abstract: The invention is directed to a method of forming small, thin glass articles having a thickness of less than 5 mm by the use of a plunger and a die, the die having walls, a terminal area and a transition area in contact with both the walls and the transition area is such that the interior distance dimensions of the die gradually decrease as one progresses from the terminal area through the transition area to the walls.

Abstract: The invention relates to glass articles suitable for use as electronic device housing/enclosure or protective cover which comprise a glass material. Particularly, a housing/enclosure/cover comprising an ion-exchanged glass exhibiting the following attributes (1) radio, and microwave frequency transparency, as defined by a loss tangent of less than 0.03 and at a frequency range of between 15 MHz to 3.0 GHz; (2) infrared transparency; (3) a fracture toughness of greater than 0.6 MPa·m1/2; (4) a 4-point bend strength of greater than 350 MPa; (5) a Vickers hardness of at least 450 kgf/mm2 and a Vickers median/radial crack initiation threshold of at least 5 kgf, (6) a Young's Modulus ranging between about 50 to 100 GPa; (7) a thermal conductivity of less than 2.0 W/m° C., and (9) and at least one of the following attributes: (i) a compressive surface layer having a depth of layer (DOL) greater and a compressive stress greater than 400 MPa, or, (ii) a central tension of more than 20 MPa.

Abstract: A rare-earth-containing glass material having a composition, expressed in mole percentages on and oxide basis, comprising: SiO2: 66-75 Al2O3: 11-17 B2O3: 0-4 MgO: 1-6.5 CaO: 2-7 SrO: 0-4 BaO: 0-4 Y2O3: 0-4 La2O3: 0-4 Y2O3+La2O3: 0.1-4. The inclusion of Y2O3 and/or La2O3 in the composition reduces the T2.3 of the glass thereby allowing higher annealing-point glasses to be produced. The glass is particularly useful for low-temperature polycrystalline silicon-based semiconductor devices.

Abstract: A glass that is ion exchangeable to a depth of at least 20 ?m (microns) and has a internal region having a tension of less than or equal to 100 MPa. The glass is quenched or fast cooled from a first temperature above the anneal point of the glass to a second temperature that is below the strain point of the glass. In one embodiment, the glass is a silicate glass, such as an alkali silicate glass, an alkali aluminosilicate glass, an aluminosilicate glass, a borosilicate glass, an alkali aluminogermanate glass, an alkali germanate glass, an alkali gallogermanate glass, and combinations thereof.

Abstract: A fining agent for reducing the concentration of seeds or bubbles in a silicate glass. The fining agent includes at least one inorganic compound, such as a hydrate or a hydroxide that acts as a source of water. In one embodiment, the fining agent further includes at least one multivalent metal oxide and, optionally, an oxidizer. A fusion formable and ion exchangeable silicate glass having a seed concentration of less than about 1 seed/cm3 is also provided. Methods of reducing the seed concentration of a silicate glass, and a method of making a silicate glass having a seed concentration of less than about 1 seed/cm3 are also described.

Abstract: A silicate glass that is tough and scratch resistant. The toughness is increased by minimizing the number of non-bridging oxygen atoms in the glass. In one embodiment, the silicate glass is an aluminoborosilicate glass in which ?15 mol 1%?(R2O+R?O—Al2O3—ZrO2)—B2O3?4 mol %, where R is one of Li, Na, K, Rb, and Cs, and R? is one of Mg, Ca, Sr, and Ba.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.

Abstract: A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/?20×10?7/° C. of the linear coefficient thermal of expansion of the germanium first layer.

Abstract: Compositions, and articles having low thermal expansion suitable for high temperature applications, such as automotive exhaust treatment and method of manufacturing such articles are disclosed.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.

Abstract: An optical article having a rare earth doped, fluorinated aluminosilicate glass core composition consisting essentially, in mole %, of: SiO2 0-90 GeO2 0-90 Na2O 0-25 Li2O 0-10 K2O 0-25 Rb2O 0-25 Cs2O 0-25 Al2O3 5-40 Ga2O3 5-40 RE2(1)O3 0-40 RE2(2)O3 0-1  Er2O3 0.

Abstract: An optical article having a rare earth doped, fluorinated aluminosilicate glass core composition consisting essentially, in mole %, of:______________________________________ SiO.sub.2 0-90 GeO.sub.2 0-90 Na.sub.2 O 0-25 Li.sub.2 O 0-10 K.sub.2 O 0-25 Rb.sub.2 O 0-25 Cs.sub.2 O 0-25 Al.sub.2 O.sub.3 5-40 Ga.sub.2 O.sub.3 5-40 RE.sub.2 (1)O.sub.3 0-40 RE.sub.2 (2)O.sub.3 0-1 Er.sub.2 O.sub.3 0.001-5 Yb.sub.2 O.sub.3 0-5 PbO 0-15 RO 0-20 ZnO 0-10 ZrO.sub.2 0-2 TiO.sub.2 0-2 Nb.sub.2 O.sub.5 0-10 Ta.sub.2 O.sub.5 0-10 P.sub.2 O.sub.5 0-5 B.sub.2 O.sub.3 0-15 As.sub.2 O.sub.3 0-10 Sb.sub.2 O.sub.3 0-20 Na.sub.2 Cl.sub.2 0-10 Bi.sub.2 O.sub.3 0-5, and ______________________________________up to 15 weight % fluorine in the form of at least one of a fluorinated component of the glass composition and a batch constituent selected from a group consisting of at least one of AlF.sub.3, REF.sub.3, NH.sub.5 F.sub.2, NaF, Na.sub.2 SiF.sub.6, Na.sub.3 AlF.sub.

Abstract: A transparent class ceramic composition includes an oxide component, a rare earth component, a halide component, and a substantially pure rare earth-halide (e.g., REF.sub.3) crystal component. A method for making a transparent oxyfluoride glass includes preparing an oxyfluoride glass containing rare earth ions by a conventional melting method and subjecting the glass to a heat treatment thereby precipitating fluoride fine crystals containing a large amount of rare earth ions.

Abstract: The present invention relates to a transparent glass-ceramic article which includes a glass matrix and a crystalline phase of apatite crystals in the glass matrix. The present invention further relates to a method of producing the transparent glass-ceramic article.