Abstract: Various methods of fabricating a conductor structure are provided. In one aspect, a method of fabricating a conductor structure on a first workpiece is provided. A silicon film is formed on the first workpiece. An anti-reflective coating is formed on the silicon film. A mask is formed on a first portion of the anti-reflective coating, while a second portion thereof is left unmasked. The second portion of the anti-reflective coating and the silicon film are etched. The mask is removed, and the anti-reflective coating is removed by isotropic plasma etching. Use of isotropic etching for anti-reflective coating removal eliminates thermal shock associated with heated acid bath anti-reflective coating removal.

Abstract: A method for controlling spacer width in a semiconductor device is provided. A substrate having a gate formed thereon is provided. An insulative layer is formed over at least a portion of the substrate. The insulative layer covers the gate. The thickness of the insulative layer is measured. A portion of the insulative layer to be removed is determined based on the measured thickness of the insulative layer. The portion of the insulative layer is removed to define a spacer on the gate. A processing line for forming a spacer on a gate disposed on a substrate includes a deposition tool, a thickness metrology tool, and automatic process controller, and a spacer etch tool. The deposition tool is adapted to form an insulative layer over at least a portion of the substrate. The insulative layer covers the gate. The thickness metrology tool is adapted to measure the thickness of the insulative layer.

Abstract: Various methods of fabricating a circuit structure, such as a gate electrode or a resistor are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon structure on a substrate and forming an oxide film on the silicon structure. A first portion of the oxide film is masked while a second portion is left unmasked. The second portion of the oxide film is removed by isotropic plasma etching to expose a portion of the silicon structure, and the first portion of the oxide film is unmasked. Use of isotropic etching for removal of a resistor protect oxide reduces the potential for isolation structure damage due to aggressive overetching associated with conventional anisotropic etching techniques.

Abstract: The present invention provides for a method and an apparatus for controlling critical dimensions. At least one run of semiconductor devices is processed. A critical dimension measurement is performed upon at least one of the processed semiconductor device. An analysis of the critical dimension measurement is performed. A secondary process upon the semiconductor device in response to the critical dimension analysis is performed.

Abstract: A method for controlling spacer width in a semiconductor device is provided. A substrate having a gate formed thereon is provided. An insulative layer is formed over at least a portion of the substrate. The insulative layer covers the gate. The thickness of the insulative layer is measured. A portion of the insulative layer to be removed is determined based on the measured thickness of the insulative layer. The portion of the insulative layer is removed to define a spacer on the gate. A processing line for forming a spacer on a gate disposed on a substrate includes a deposition tool, a thickness metrology tool, and automatic process controller, and a spacer etch tool. The deposition tool is adapted to form an insulative layer over at least a portion of the substrate. The insulative layer covers the gate. The thickness metrology tool is adapted to measure the thickness of the insulative layer.