Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus.

Abstract: A metrology system includes a first beam analysis system for analyzing at least one first measurement beam that was coupled from the excitation laser beam before a reflection on the target material and a second beam analysis system for analyzing at least one second measurement beam that was coupled from the excitation laser beam after a reflection on the target material. Each of the first beam analysis system and the second beam analysis system has at least one wavefront sensor system.

Abstract: A method for producing a reflecting optical element for a projection exposure apparatus (1). The element has a substrate (30) with a substrate surface (31), a protection layer (38) and a layer partial system (39) suitable for the EUV wavelength range. The method includes: (a) measuring the substrate surface (31), (b) irradiating the substrate (30) with electrons (36), and (c) tempering the substrate (30). Furthermore, an associated reflective optical element for the EUV wavelength range, a projection lens with a mirror (18, 19, 20) as reflective optical element, and a projection exposure apparatus (1) including such a projection lens.

Abstract: A measuring assembly for the frequency-based determination of the position of a component, in particular in an optical system for microlithography, includes at least one optical resonator, which has a stationary first resonator mirror, a movable measurement target assigned to the component, and a stationary second resonator mirror. The second resonator mirror is formed by an inverting mirror (130, 330, 430, 530), which reflects back on itself a measurement beam coming from the measurement target.

Abstract: The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus.

Abstract: The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: A projection exposure system (10) for microlithography includes projection optics (12) configured to image mask structures into a substrate plane (16), an input diffraction element (28) configured to convert irradiated measurement radiation (21) into at least two test waves (30) directed onto the projection optics (12) with differing propagation directions, a detection diffraction element (34; 28) disposed in the optical path of the test waves (30) after they have passed through the projection optics (12) and configured to produce a detection beam (36) from the test waves (30) which has a mixture of radiation portions of both test waves (30), a photo detector (38) disposed in the optical path of the detection beam (36) configured to record the radiation intensity of the detection beam (36), time resolved, and an evaluation unit configured to determine the lateral imaging stability of the projection optics (12) from the radiation intensity recorded.

Abstract: A system and a method for analyzing a light beam guided by a beam guiding optical unit. The system has a graduated neutral density filter arrangement (120, 520), which is arranged in a far field plane of the beam guiding optical unit and has at least one graduated neutral density filter (121, 521, 522, 523) having a spatially varying transmission, and a light intensity sensor arrangement having at least one light intensity sensor (140, 540), which is arranged in a near field plane of the beam guiding optical unit and is configured to measure (141, 541, 542, 543), for each graduated neutral density filter (121, 521, 522, 523) of the graduated neutral density filter arrangement (120, 520), a light intensity transmitted by each graduated neutral density filter.

Abstract: A projection exposure system (10) for microlithography. The system includes projection optics (12) configured to image mask structures into a substrate plane (16), an input diffraction element (28) which is configured to convert irradiated measurement radiation (21) into at least two test waves (30) directed onto the projection optics (12) with differing propagation directions, a detection diffraction element (34; 28) which is disposed in the optical path of the test waves (30) after the latter have passed through the projection optics (12) and is configured to produce a detection beam (36) from the test waves (30) which has a mixture of radiation portions of both test waves (30), a photo detector (38) disposed in the optical path of the detection beam (36) which is configured to record the radiation intensity of the detection beam (36), time resolved, and an evaluation unit which is configured to determine the lateral imaging stability of the projection optics (12) from the radiation intensity recorded.

Abstract: A system and a method for analyzing a light beam guided by a beam guiding optical unit. The system has a graduated neutral density filter arrangement (120, 520), which is arranged in a far field plane of the beam guiding optical unit and has at least one graduated neutral density filter (121, 521, 522, 523) having a spatially varying transmission, and a light intensity sensor arrangement having at least one light intensity sensor (140, 540), which is arranged in a near field plane of the beam guiding optical unit and is configured to measure (141, 541, 542, 543), for each graduated neutral density filter (121, 521, 522, 523) of the graduated neutral density filter arrangement (120, 520), a light intensity transmitted by each graduated neutral density filter.

Abstract: A measuring arrangement for use when determining trajectories of flying objects, wherein the measuring arrangement comprises at least one photodetector arrangement (411, 412, 421, 422, 780, 785, 880, 980) comprising a plurality of photodetector cells in a monolithic construction, wherein the photodetector arrangement is assigned exactly one imaging system (700, 750, 800, 900). During the operation of the measuring arrangement, images in each case a flying object situated in an object plane (OP) of the imaging system onto the photodetector arrangement situated in an image plane (IP) of the imaging system, and a time measuring device for measuring transit instants, wherein each of the transit instants corresponds to an instant at which an image of a flying object, generated in the image plane (IP) of the imaging system, respectively crosses a cell boundary between mutually adjacent photodetector cells in the photodetector arrangement.

Abstract: A beam propagation camera has at least one beam-splitting optical arrangement (240) configured to split a beam, which is incident on the beam-splitting optical arrangement along an optical axis (OA) of the beam propagation camera, into a multiplicity of sub-beams, and a sensor arrangement (250) configured to detect the sub-beams. The beam-splitting optical arrangement has a diffractive structure (241) configured such that at least two of the sub-beams are spatially separated from one another on the sensor arrangement and have respective foci longitudinally offset from one another along the optical axis.

Abstract: A projection exposure system (10) for microlithography. The system includes projection optics (12) configured to image mask structures into a substrate plane (16), an input diffraction element (28) which is configured to convert irradiated measurement radiation (21) into at least two test waves (30) directed onto the projection optics (12) with differing propagation directions, a detection diffraction element (34; 28) which is disposed in the optical path of the test waves (30) after the latter have passed through the projection optics (12) and is configured to produce a detection beam (36) from the test waves (30) which has a mixture of radiation portions of both test waves (30), a photo detector (38) disposed in the optical path of the detection beam (36) which is configured to record the radiation intensity of the detection beam (36), time resolved, and an evaluation unit which is configured to determine the lateral imaging stability of the projection optics (12) from the radiation intensity recorded.