Abstract: A power conversion system comprising a system controller configured to generate an input signal in response to a system input and a switch controller coupled to the system controller, the switch controller configured to control a power switch. The switch controller comprises a driver interface configured to receive the input signal that indicates whether the power switch should be ON or OFF, the driver interface further configured to transmit one or more current pulses across a galvanic isolation using an inductive coupling. The driver interface further comprises a first local power supply configured to increase an output voltage of the first local power supply when a transmission of current pulses is imminent.

Abstract: The present invention relates to a selective catalytic reduction catalyst comprising a porous wall-flow filter substrate; wherein in the pores of the porous internal walls and on the surface of the porous internal walls, the catalyst comprises a selective catalytic reduction coating comprising a selective catalytic reduction component comprising a zeolitic material comprising one or more of copper and iron. The present invention further relates to a process for preparing a selective catalytic reduction catalyst using particles of a carbon-containing additive and an aqueous mixture comprising said particles of a carbon-containing additive.

Abstract: A process for preparing a catalyst comprising a zeolitic material comprising copper, the process comprising (i) preparing an aqueous mixture comprising water, a zeolitic material comprising copper, a source of copper other than the zeolitic material comprising copper, and a non-zeolitic oxidic material selected from the group consisting of alumina, silica, titania, zirconia, ceria, a mixed oxide comprising one or more of Al, Si, Ti, Zr, and Ce and a mixture of two or more thereof; (ii) disposing the mixture obtained in (i) on the surface of the internal walls of a substrate comprising an inlet end, an outlet end, a substrate axial length extending from the inlet end to the outlet end and a plurality of passages defined by internal walls of the substrate extending therethrough; and optionally drying the substrate comprising the mixture disposed thereon; (iii) calcining the substrate obtained in (ii).

Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0?x?1, 0?y<1 and x+y?1, wherein at least one layer of the layer system includes an aluminum portion x?0.05 or an indium portion y?0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Abstract: A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.

Abstract: A selective catalytic reduction catalyst for the treatment of an exhaust gas stream of a passive ignition engine, the catalyst comprising a porous wall-flow filter substrate comprising an inlet end, an outlet end, a substrate axial length (w) extending between the inlet end and the outlet end, and a plurality of passages defined by porous internal walls of the porous wall flow filter substrate; wherein the catalyst further comprises a first coating, said first coating extending over x % of the substrate axial length from the inlet end toward the outlet end of the substrate, x being in the range of from 10 to 100, wherein the first coating comprises copper and an 8-membered ring pore zeolitic material; wherein the catalyst further comprises a second coating, the second coating extending over y % of the substrate axial length from the outlet end toward the inlet end of the substrate, y being in the range of from 20 to 90, wherein the second coating comprises copper, and optionally an 8-membered ring pore zeolit

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0?x1?1 or Alx1Iny1Ga1-x1-y1N with 0?x1?1, 0?y1<1 and x1+y1?1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min<x1max, and the second partial layer includes Alx2Ga1-x2N with 0?x2?x1min or Alx2Iny2Ga1-x2-y2N with 0?x2?x1min, 0?y2<1 and x2+y2?1.

Abstract: The present invention relates to a selective catalytic reduction catalyst for the treatment of an exhaust gas of a diesel engine comprising: a flow-through substrate comprising an inlet end, an outlet end, a substrate axial length extending from the inlet end to the outlet end and a plurality of passages defined by internal walls of the flow through substrate extending therethrough; a coating disposed on the surface of the internal walls of the substrate, wherein the coating comprises a non-zeolitic oxidic material comprising manganese and one or more of the metals of the groups 4 to 11 and 13 of the periodic table, and further comprises one or more of a vanadium oxide and a zeolitic material comprising one or more of copper and iron.

Abstract: An intelligent vital microscopy, IVM, device is described. The IVM device includes: a receiver configured to receive at least one IVM image of a human microcirculation, MC, of an organ surface; a learning processor coupled to the receiver and configured to: process the at least one IVM image and extract at least one MC variable therefrom, and identify from the extracted at least one MC variable of the at least one IVM image at least one of: an underlying cause for an observed abnormality, an intervention, a disease state, a disease diagnosis, a medical state of the human; a presence of a pathogen; and an output coupled to the learning processor and configured to output the identification.

Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0?x1?1 or Alx1Iny1Ga1-x1-y1N with 0?x1?1, 0?y1<1 and x1+y1?1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min?x1max, and the second partial layer includes Alx2Ga1-x2N with 0?x2?x1min or Alx2Iny2Ga1-x2-y2N with 0?x2?x1min, 0?y2<1 and x2+y2?1.

Abstract: A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.

Abstract: A controller for a semiconductor switch is described that includes a transmitter and a receiver that communicate across galvanic isolation using an inductive coupling. An example controller includes first circuitry referenced to a first reference potential, second circuitry referenced to a second reference potential and galvanically isolated from the first circuitry, and an inductive coupling galvanically isolating the first circuitry and the second circuitry. The inductive coupling includes a first winding referenced to the first reference potential and a second winding referenced to the second reference potential, wherein the first circuitry includes signal reception circuitry coupled to the inductive coupling, wherein the signal reception circuitry includes one or more signal receivers coupled to the first winding to receive signals transmitted over the inductive coupling.

Abstract: A power conversion system comprising a system controller configured to generate an input signal in response to a system input and a switch controller coupled to the system controller, the switch controller configured to control a power switch. The switch controller comprises a driver interface configured to receive the input signal that indicates whether the power switch should be ON or OFF, the driver interface further configured to transmit one or more current pulses across a galvanic isolation using an inductive coupling. The driver interface further comprises a first local power supply configured to increase an output voltage of the first local power supply when a transmission of current pulses is imminent.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: Signal transmission circuitry comprises a conductive transmitting coil, a first power supply, a semiconductor switch to reversibly couple the transmitting coil to the first power supply, control circuitry to control the coupling of the transmitting coil to the first power supply by the semiconductor switch, a second power supply coupled to supply power to the control circuitry.

Abstract: A controller for a semiconductor switch is described that includes a transmitter and a receiver that communicate across galvanic isolation using an inductive coupling. An example controller includes first circuitry referenced to a first reference potential, second circuitry referenced to a second reference potential and galvanically isolated from the first circuitry, and an inductive coupling galvanically isolating the first circuitry and the second circuitry. The inductive coupling includes a first winding referenced to the first reference potential and a second winding referenced to the second reference potential, wherein the first circuitry includes signal reception circuitry coupled to the inductive coupling, wherein the signal reception circuitry includes one or more signal receivers coupled to the first winding to receive signals transmitted over the inductive coupling.

Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Abstract: Methods for oxidative coupling of methane using metal oxide catalysts and a sulfur oxidant.