Abstract: A signal transmission system for communicating across galvanic isolation includes a magnetic coupling having a transmitter-side inductor and a receiver-side inductor. The transmitter is coupled to the transmitter-side inductor, is referenced to a first potential, and includes a pulse generator coupled to output to the transmitter-side inductor a first state representation that represents a first logic state with multiple transitions, and a second state representation that represents a second logic state with multiple transitions. The pulse generator in outputting the first state representation is coupled to output a first information portion that includes the multiple transitions of the first state representation, and a first initial delay portion having a duration longer than a duration of the multiple transitions of the second state representation.

Abstract: An analog receiver frontend includes a first amplification circuit coupled to receive an input signal. The first amplification stage is coupled to amplify a difference between the input signal and a threshold to generate the first signal. A second amplification circuit is coupled to receive the first signal from the first amplification circuit. The second amplification circuit is coupled to amplify the first signal to generate a second signal. An output circuit is coupled to receive the second signal from the second amplification circuit. The output circuit is coupled to output a recovered signal. The recovered signal is a pulse waveform of high and low sections. An input hysteresis circuit is coupled to the output circuit to receive the recovered signal and generate a hysteresis signal. One or both of the input signal and the threshold are level shifted by the hysteresis signal in response to the recovered signal.

Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

Abstract: A signal transmission system for communicating across galvanic isolation includes a magnetic coupling having a transmitter-side inductor and a receiver-side inductor. The transmitter is coupled to the transmitter-side inductor, is referenced to a first potential, and includes a pulse generator coupled to output to the transmitter-side inductor a first state representation that represents a first logic state with multiple transitions, and a second state representation that represents a second logic state with multiple transitions. The pulse generator in outputting the first state representation is coupled to output a first information portion that includes the multiple transitions of the first state representation, and a first initial delay portion having a duration longer than a duration of the multiple transitions of the second state representation.

Abstract: A signal transmission system for communicating across galvanic isolation. The signal transmission system includes first circuitry referenced to a first potential, the first circuitry comprising signal transmission circuitry, second circuitry referenced to a second potential and galvanically isolated from the first circuitry, the second circuitry comprising signal reception circuitry, and a magnetic coupling between the first circuitry to the second circuitry across the galvanic isolation, the magnetic coupling comprising a transmitter-side inductor and a receiver-side inductor. The signal transmission circuitry can include a source coupled to output, to the transmitter-side inductor of the magnetic coupling, a first state representation that represents a first logic state with multiple transitions, the first state representation including at least a first upward transition, a first downward transition, a second upward transition, and a second downward transition.

Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Abstract: An analog receiver frontend includes a first amplification circuit coupled to receive an input signal. The first amplification stage is coupled to amplify a difference between the input signal and a threshold to generate the first signal. A second amplification circuit is coupled to receive the first signal from the first amplification circuit. The second amplification circuit is coupled to amplify the first signal to generate a second signal. An output circuit is coupled to receive the second signal from the second amplification circuit. The output circuit is coupled to output a recovered signal. The recovered signal is a pulse waveform of high and low sections. An input hysteresis circuit is coupled to the output circuit to receive the recovered signal and generate a hysteresis signal. One or both of the input signal and the threshold are level shifted by the hysteresis signal in response to the recovered signal.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Abstract: Methods for oxidative coupling of methane using metal oxide catalysts and a sulfur oxidant.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract: A data communications receiver including a receiver coil, a first amplification stage coupled to the receiver coil, the first amplification circuitry to differentially amplify at least part of signal received by the receiver coil relative to a threshold, a second amplification stage coupled to receive the differentially amplified signal from the first amplification stage, the second amplification stage comprising a current mirror, and hysteretic level shifting circuitry to shift a level of part of the signal received by the receiver coil, the threshold or part of the signal received by the receiver coil and the threshold such that, in response to the at least part of the signal received by the receiver coil having crossed the threshold, a threshold crossing in the other direction is delayed.

Abstract: An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0<x?1, and the interlayer includes magnesium.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract: Signal transmission circuitry comprises a conductive transmitting coil, a first power supply, a semiconductor switch to reversibly couple the transmitting coil to the first power supply, control circuitry to control the coupling of the transmitting coil to the first power supply by the semiconductor switch, a second power supply coupled to supply power to the control circuitry.

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.