Abstract: A thin film transistor liquid crystal display (TFT-LCD) and fabrication method thereof. The fabrication method includes depositing a first metal layer on a transparent substrate, patterning the first metal layer to form at least two adjacent gate electrodes, forming a gate insulating layer on the gate electrodes, forming a semiconductor layer on the insulating layer, patterning the semiconductor layer into a predetermined shape, depositing a second metal layer on the transparent substrate, patterning the second metal layer to form a source/drain electrode layer, and depositing an insulating layer on the transparent substrate. A contact hole is defined via the insulating layer, source/drain electrode layer, and gate insulating layer, exposing a part of the surface of transparent substrate between the adjacent gate electrodes. A transparent conductive layer is deposited on the transparent substrate, and a light-shielding matrix is formed directly above the contact hole.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) and fabrication method thereof. The fabrication method includes depositing a first metal layer on a transparent substrate, patterning the first metal layer to form at least two adjacent gate electrodes, forming a gate insulating layer on the gate electrodes, forming a semiconductor layer on the insulating layer, patterning the semiconductor layer into a predetermined shape, depositing a second metal layer on the transparent substrate, patterning the second metal layer to form a source/drain electrode layer, and depositing an insulating layer on the transparent substrate. A contact hole is defined via the insulating layer, source/drain electrode layer, and gate insulating layer, exposing a part of the surface of transparent substrate between the adjacent gate electrodes. A transparent conductive layer is deposited on the transparent substrate, and a light-shielding matrix is formed directly above the contact hole.