Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Abstract: A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.

Abstract: A wrench support rack including a base, and at least one clamp assembly attached to the base and comprising a vertical stop spaced apart from a push member. The space in between the vertical stop and the push member forms a groove configured to receive a stem of a wrench. The vertical stop includes an upper ridge portion configured to engage a stem of a wrench and limit vertical movement of a wrench disposed in the groove. The push member includes an inward protrusion configured to press a stem of a wrench in to the vertical stop and limit horizontal movement of a wrench disposed in the groove.

Abstract: An aerosolization system includes a container that is configured to deliver a unit dosage of a liquid when squeezed a single time. The system also includes an aerosolizer that is constructed of a housing defining a mouthpiece, and an aerosol generator disposed in the housing. The aerosol generator includes a vibratable membrane having a front face and a rear face, and a vibratable element used to vibrate the membrane. Further, the housing includes an opening that is adapted to receive a unit dosage of the liquid from the container. The opening provides a liquid path to the rear face of the vibratable membrane.

Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft.

Abstract: Dry powder vancomycin compositions and methods for administering and preparing such compositions are provided.

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

Abstract: A holographic three dimensional imaging projecting medical apparatus is provided, including: a three dimensional imaging device, having a projecting mechanism and an image forming mechanism, the projecting mechanism including a housing and a projecting unit, the projecting unit projecting a plurality of projected images through the housing to the image forming mechanism, to form a three dimensional image within an image forming space of the image forming mechanism, the housing having a plurality of reflection portions, each of the plurality of reflection portions having a through hole and a plurality of light reflecting sheets disposed around the through hole, the projecting unit attached to the housing; a motion detector, detecting an operating gesture and generating a control signal corresponding to the operating gesture; and a processor, receiving the control signal and controlling the three dimensional image according to the control signal.

Abstract: A spa apparatus may comprise a cart, a magnifying lamp, a phototherapy mask, a bed, and a bathtub. A computer, a storage battery, and a communicator are electrically connected and installed inside the cart, and the cart is electrically connected to a power outlet and a display, which enables the cart to be moved and used not limited by the location of power supply. Moreover, the cart has a drawer and a spacing for the storage of beauty products and tools, and through sequentially connecting to a front arm, a rear arm, and a base, the phototherapy mask is configured to be used in different angles and to be held above or in front of a user's in a preferable height.

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract: A dry powder insulin formulation for reconstitution including insulin, a buffering agent, and a salt. The dry powder insulin formulation includes between about 70 and 95% w/w of insulin, between about 5 and 30% w/w of the buffering agent, and less than about 1% w/w of the salt. The dry powder insulin formulation has less than about 5% water content.

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Abstract: Dry powder vancomycin compositions and methods for administering and preparing such compositions are provided.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1?xAs, InxGa1?xSb, InxGa1?xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.