Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.

Abstract: A method for manufacturing a rectifier with a vertical MOS structure is provided. A first trench structure and a first mask layer are formed at a first side of the semiconductor substrate. A second trench structure is formed in the second side of the semiconductor substrate. A gate oxide layer, a polysilicon structure and a metal sputtering layer are sequentially formed on the second trench structure. The rectifier further includes a wet oxide layer and a plurality of doped regions. The wet oxide layer is formed on a surface of the first multi-trench structure and in the semiconductor substrate. The doping regions are formed on a region between the semiconductor substrate and the second trench structure, and located beside the mask layer. The metal sputtering layer is formed on the first mask layer corresponding to the first trench structure.

Abstract: A light emitting diode package including a carrier, at least one LED chip, and a light guide element. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and located above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side surface. The side surface connects the light transmissive body and the light incident surface. The reflective film is disposed on the side surface. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: A method of and apparatus for forming interconnects on a substrate includes etching patterns in ultra-low k dielectric and removing moisture from the ultra-low k dielectric using active energy assist baking. During active energy assist baking, the ultra-low k dielectric is heated and exposed to light having only wavelengths greater than 400 nm for about 1 to about 20 minutes at a temperature of about 300 to about 400 degrees Celsius. The active energy assist baking is performed after wet-cleaning or after chemical mechanical polishing, or both.

Abstract: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.

Abstract: A fabrication method of an ultra low-k dielectric layer is provided. A deposition process is performed, under the control of a temperature varying program or a pressure varying program, by reacting a dielectric matrix to form porous low-k dielectric layers with a gradient density on a barrier layer over a substrate.

Abstract: A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.

Abstract: A varnish composition includes (1) a benzoxazine resin having highly symmetric molecular structure; (2) at least one of naphthol type novolac resins, aniline type novolac resins and phenolic type novolac resins; (3) fillers. The benzoxazine resin having highly symmetric molecular structure, and the at least one of naphthol type novolac resins, aniline type novolac resins and phenolic type novolac resins contribute to increase the temperature of glass transition of the varnish composition, while decrease the coefficient of thermal expansion and moisture absorbability due to their small and highly symmetric molecular structures. A copper substrate can meet the requirement of high temperature of glass transition (TMA?200° C.) and low coefficient of thermal expansion (?1/??30/1350(?m/(m° C.). Therefore, the composition of the invention can be widely used as high-performance electronic material.

Abstract: An illumination system for providing an illumination beam to a light valve is provided. The illumination system includes a light source, a light integration rod, a color wheel, a first focusing unit and a second focusing unit. The light source is capable of generating the illumination beam, and the light integration rod is disposed on the transmission path of the illumination beam. The first focusing unit is disposed between the integration rod and the color wheel and is capable of focusing the illumination beam onto the color wheel. The second focusing unit is disposed between the color wheel and the light valve and is capable of focusing the illumination beam onto the light valve.

Abstract: A cruising aerator includes a raft, a motor mounted on the raft, a shaft driven by the motor, a first impeller mounted on the shaft, a second impeller mounted on the shaft, and a common chamber. The cruising aerator further includes a sequential controller connected to the motor for controlling the motor to rotate clockwise or counterclockwise. The motor, the shaft and impellers are installed inside of the common chamber. The common chamber has a common inlet disposed under a water surface. A first outlet and a second outlet of the common chamber are arranged to face in opposite directions. The first impeller and second impeller are assembled to have opposite normal rotating directions to each other according to a rotating direction of the motor.

Abstract: A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.

Abstract: A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.

Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.

Abstract: A color filtering device including a color filter, a plurality of polarization beam splitting units, a plurality of reflecting units, and a plurality of wave plates is provided. The color filter has a plurality of filtering parts and a plurality of light shielding parts alternately arranged thereon. Each of the polarization beam splitting units is disposed in front of one of the filtering parts and makes an angle with a corresponding filtering part. Each of the reflecting units is disposed in front of one of the light shielding parts and makes an angle with a corresponding light shielding part. Each of the wave plates is substantially parallel to one of the filtering parts. Each of the polarization beam splitting units is disposed between a pair of a wave plate and a filtering part. The color filtering device has both color filtering function and polarization conversion function.

Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.

Abstract: A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method includes turning off the reaction gas and the low-frequency power after the low-k material layer is formed, and continuing to provide the cleaning gas during a delay time.

Abstract: A cruising aerator includes a raft, a motor mounted on the raft, a shaft driven by the motor, a first impeller mounted on the shaft, a second impeller mounted on the shaft, and a common chamber. The cruising aerator further includes a sequential controller connected to the motor for controlling the motor to rotate clockwise or counterclockwise. The motor, the shaft and impellers are installed inside of the common chamber. The common chamber has a common inlet disposed under a water surface. A first outlet and a second outlet of the common chamber are arranged to face in opposite directions. The first impeller and second impeller are assembled to have opposite normal rotating directions to each other according to a rotating direction of the motor.

Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: Route planning methods and systems are provided. First, an input corresponding to a specific region is received via an input unit of a personal navigation device. Then, a first predefined location located in the specific region is determined. A first route from a first current position of the device to the first predefined location is planned.