Patents by Inventor Meng-Hung Shen
Meng-Hung Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210175876Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.Type: ApplicationFiled: February 19, 2021Publication date: June 10, 2021Inventors: Po-Chia LAI, Meng-Hung SHEN, Chi-Lin LIU, Stefan RUSU, Yan-Hao CHEN, Jerry Chang-Jui KAO
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Publication number: 20210118793Abstract: A semiconductor structure is disclosed that includes a first conductive line, a first conductive segment, a second conductive segment, and a gate. The first conductive segment is electrically coupled to the first conductive line through a conductive via. The second conductive segment is configured to electrically couple the first conductive segment with a third conductive segment disposed over an active area. The gate is disposed under the second conductive segment and disposed between first conductive segment and the third conductive segment. The first conductive line and the second conductive segment are disposed at two sides of the conductive via respectively. A length of the first conductive segment is greater than a length of the third conductive segment.Type: ApplicationFiled: December 23, 2020Publication date: April 22, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung SHEN, Chih-Liang CHEN, Charles Chew-Yuen YOUNG, Jiann-Tyng TZENG, Kam-Tou SIO, Wei-Cheng LIN
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Patent number: 10931264Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.Type: GrantFiled: June 11, 2019Date of Patent: February 23, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chia Lai, Meng-Hung Shen, Chi-Lin Liu, Stefan Rusu, Yan-Hao Chen, Jerry Chang-Jui Kao
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Patent number: 10879173Abstract: A semiconductor structure is disclosed that includes a first conductive line, a first conductive segment, a second conductive segment, and a gate. The first conductive segment is electrically coupled to the first conductive line through a conductive via. The second conductive segment is configured to electrically couple the first conductive segment with a third conductive segment disposed over an active area. The gate is disposed under the second conductive segment and disposed between first conductive segment and the third conductive segment. The first conductive line and the second conductive segment are disposed at two sides of the conductive via respectively.Type: GrantFiled: January 31, 2019Date of Patent: December 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung Shen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Wei-Cheng Lin
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Publication number: 20200320244Abstract: An integrated circuit structure includes a first, a second and a third set of conductive structures and a first and a second set of vias. The first set of conductive structures extend in a first direction, and is located at a first level. The second set of conductive structures extends in a second direction, overlaps the first set of conductive structures, and is located at a second level. The first set of vias is between, and electrically couples the first and the second set of conductive structures. The third set of conductive structures extends in the first direction, overlaps the second set of conductive structures, covers a portion of the first set of conductive structures, and is located at a third level. The second set of vias is between, and electrically couples the second and the third set of conductive structures.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Jung-Chan YANG, Ting-Wei CHIANG, Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Lee-Chung LU, Li-Chun TIEN, Meng-Hung SHEN, Shang-Chih HSIEH, Chi-Yu LU
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Patent number: 10784168Abstract: The present disclosure relates to an integrated chip. In some embodiments, the integrated chip has a first plurality of source and drain regions disposed within a substrate along a first line extending in a first direction. A plurality of gate structures are arranged over the substrate at a substantially regular pitch, and a plurality of middle-of-the-line (MOL) structures are respectively interleaved between adjacent ones of the plurality of gate structures. The plurality of MOL structures include MOL active structures that are electrically coupled to an overlying conductive interconnect and MOL dummy structures that are not electrically coupled to any overlying conductive interconnect. The plurality of MOL structures are arranged over the first plurality of source and drain regions at an irregular pitch that is larger than the substantially regular pitch.Type: GrantFiled: October 8, 2018Date of Patent: September 22, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hui-Ting Yang, Chih-Ming Lai, Chun-Kuang Chen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Meng-Hung Shen, Ru-Gun Liu, Wei-Cheng Lin
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Patent number: 10740531Abstract: An integrated circuit structure includes a set of gate structures, a first conductive structure, a first and second set of vias, and a first set of conductive structures. The set of gate structures is located at a first level. The first conductive structure extends in a first direction, overlaps the set of gate structures and is located at a second level. The first set of vias is between the set of gate structures and the first conductive structure. The first set of vias couple the set of gate structures to the first conductive structure. The first set of conductive structures extend in a second direction, overlap the first conductive structure, and is located at a third level. The second set of vias couple the first set of conductive structures to the first conductive structure, and is between the first set of conductive structures and the first conductive structure.Type: GrantFiled: October 24, 2017Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Chan Yang, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien, Meng-Hung Shen, Shang-Chih Hsieh, Chi-Yu Lu
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Publication number: 20200020588Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a plurality of gate structures over a substrate, and forming a plurality of source and drain regions along opposing sides of the plurality of gate structures. A plurality of middle-of-the-line (MOL) structures are formed at locations laterally interleaved between the plurality of gate structures. The plurality of MOL structures are redefined by getting rid of a part but not all of one or more of the plurality of MOL structures. Redefining the plurality of MOL structures results in a plurality of MOL active structures arranged over the plurality of source and drain regions at an irregular pitch.Type: ApplicationFiled: September 22, 2019Publication date: January 16, 2020Inventors: Hui-Ting Yang, Chih-Ming Lai, Chun-Kuang Chen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Meng-Hung Shen, Ru-Gun Liu, Wei-Cheng Lin
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Publication number: 20190296719Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.Type: ApplicationFiled: June 11, 2019Publication date: September 26, 2019Inventors: Po-Chia LAI, Meng-Hung SHEN, Chi-Lin LIU, Stefan RUSU, Yan-Hao CHEN, Jerry Chang-Jui KAO
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Patent number: 10326430Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.Type: GrantFiled: April 12, 2017Date of Patent: June 18, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chia Lai, Meng-Hung Shen, Chi-Lin Liu, Stefan Rusu, Yan-Hao Chen, Jerry Chang-Jui Kao
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Publication number: 20190164883Abstract: A semiconductor structure is disclosed that includes a first conductive line, a first conductive segment, a second conductive segment, and a gate. The first conductive segment is electrically coupled to the first conductive line through a conductive via. The second conductive segment is configured to electrically couple the first conductive segment with a third conductive segment disposed over an active area. The gate is disposed under the second conductive segment and disposed between first conductive segment and the third conductive segment. The first conductive line and the second conductive segment are disposed at two sides of the conductive via respectively.Type: ApplicationFiled: January 31, 2019Publication date: May 30, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung SHEN, Chih-Liang CHEN, Charles Chew-Yuen YOUNG, Jiann-Tyng TZENG, Kam-Tou SIO, Wei-Cheng LIN
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Publication number: 20190102503Abstract: A method of fabricating an integrated circuit structure includes placing a first set of conductive structure layout patterns on a first layout level, placing a second set of conductive structure layout patterns on a second layout level, placing a first set of via layout patterns between the second set of conductive structure layout patterns and the first set of conductive structure layout patterns, and manufacturing the integrated circuit structure based on at least one of the layout patterns of the integrated circuit. At least one of the layout patterns is stored on a non-transitory computer-readable medium, and at least one of the placing operations is performed by a hardware processor. The first set of conductive structure layout patterns extends in a first direction. The second set of conductive structure layout patterns extends in the second direction, and overlap the first set of conductive structure layout patterns.Type: ApplicationFiled: November 30, 2018Publication date: April 4, 2019Inventors: Jung-Chan YANG, Ting-Wei CHIANG, Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Lee-Chung LU, Li-Chun TIEN, Meng-Hung SHEN, Shang-Chih HSIEH, Chi-Yu LU
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Patent number: 10204857Abstract: A method is disclosed that includes disposing a first conductive metal segment; disposing a second conductive metal segment over an active area; disposing a local conductive segment to couple the first conductive metal segment and the second conductive metal segment; disposing a first conductive via on the first conductive metal segment; and disposing a first conductive line coupled to the first conductive metal segment through the first conductive via.Type: GrantFiled: November 17, 2017Date of Patent: February 12, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung Shen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Wei-Cheng Lin
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Publication number: 20190043759Abstract: The present disclosure relates to an integrated chip. In some embodiments, the integrated chip has a first plurality of source and drain regions disposed within a substrate along a first line extending in a first direction. A plurality of gate structures are arranged over the substrate at a substantially regular pitch, and a plurality of middle-of-the-line (MOL) structures are respectively interleaved between adjacent ones of the plurality of gate structures. The plurality of MOL structures include MOL active structures that are electrically coupled to an overlying conductive interconnect and MOL dummy structures that are not electrically coupled to any overlying conductive interconnect. The plurality of MOL structures are arranged over the first plurality of source and drain regions at an irregular pitch that is larger than the substantially regular pitch.Type: ApplicationFiled: October 8, 2018Publication date: February 7, 2019Inventors: Hui-Ting Yang, Chih-Ming Lai, Chun-Kuang Chen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Meng-Hung Shen, Ru-Gun Liu, Wei-Cheng Lin
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Patent number: 10096522Abstract: The present disclosure relates to a method of forming an integrated chip having middle-of-the-line (MOL) structures arranged at an irregular pitch, and an associated method of formation. In some embodiments, the integrated chip has a well region with a plurality of source/drain regions. A plurality of gate structures are arranged over the well region at a regular pitch. A plurality of middle-of-the-line (MOL) structures are laterally interleaved between some of the plurality of gate structures and are arranged over the well region at an irregular pitch having a first pitch that is larger than the regular pitch. Since the MOL structures have an irregular pitch with a first pitch that is larger than the regular pitch, one or more of the plurality of gate structures are spaced apart from a closest gate or MOL structure by a space that reduces parasitic capacitance.Type: GrantFiled: May 6, 2016Date of Patent: October 9, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hui-Ting Yang, Chih-Ming Lai, Chun-Kuang Chen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Meng-Hung Shen, Ru-Gun Liu, Wei-Cheng Lin
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Publication number: 20180152175Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.Type: ApplicationFiled: April 12, 2017Publication date: May 31, 2018Inventors: Po-Chia LAI, Meng-Hung Shen, Chi-Lin Liu, Stefan Rusu, Yan-Hao Chen, Jerry Chang-Jui Kao
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Publication number: 20180150589Abstract: An integrated circuit structure includes a set of gate structures, a first conductive structure, a first and second set of vias, and a first set of conductive structures. The set of gate structures is located at a first level. The first conductive structure extends in a first direction, overlaps the set of gate structures and is located at a second level. The first set of vias is between the set of gate structures and the first conductive structure. The first set of vias couple the set of gate structures to the first conductive structure. The first set of conductive structures extend in a second direction, overlap the first conductive structure, and is located at a third level. The second set of vias couple the first set of conductive structures to the first conductive structure, and is between the first set of conductive structures and the first conductive structure.Type: ApplicationFiled: October 24, 2017Publication date: May 31, 2018Inventors: Jung-Chan YANG, Ting-Wei CHIANG, Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Lee-Chung LU, Li-Chun TIEN, Meng-Hung SHEN, Shang-Chih HSIEH, Chi-Yu LU
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Publication number: 20180096930Abstract: A method is disclosed that includes disposing a first conductive metal segment; disposing a second conductive metal segment over an active area; disposing a local conductive segment to couple the first conductive metal segment and the second conductive metal segment; disposing a first conductive via on the first conductive metal segment; and disposing a first conductive line coupled to the first conductive metal segment through the first conductive via.Type: ApplicationFiled: November 17, 2017Publication date: April 5, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung SHEN, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Wei-Cheng Lin
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Patent number: 9917050Abstract: A semiconductor device includes a substrate having source and drain regions, and a channel region arranged between the source and drain regions. The device further includes a gate structure over the substrate and adjacent to the channel region. The gate structure includes a gate stack, a spacer on sidewalls of the gate stack, and a conductor over the gate stack. The device further includes a first contact feature over the substrate and electrically connecting to at least one of the source and drain regions. A top surface of the first contact feature is lower than a top surface of the gate structure. The device further includes a first dielectric layer over the first contact feature. A top surface of the first dielectric layer is below or substantially co-planar with the top surface of the gate structure. The conductor at most partially overlaps in plan view with the first dielectric layer.Type: GrantFiled: October 21, 2016Date of Patent: March 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Chih-Liang Chen, Chih-Ming Lai, Kam-Tou Sio, Ru-Gun Liu, Meng-Hung Shen, Chun-Hung Liou, Shu-Hui Sung, Charles Chew-Yuen Young
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Patent number: 9837353Abstract: A semiconductor structure is disclosed that includes a semiconductor structure includes an active area, a first conductive line, a conductive via, a first conductive metal segment coupled to the conductive line through the conductive via, a second conductive metal segment disposed over the active area, and a local conductive segment configured to couple the first conductive metal segment and the second conductive metal segment.Type: GrantFiled: March 1, 2016Date of Patent: December 5, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hung Shen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Wei-Cheng Lin