Abstract: The present disclosure relates to a method of forming an integrated chip having middle-of-the-line (MOL) structures arranged at an irregular pitch, and an associated method of formation. In some embodiments, the integrated chip has a well region with a plurality of source/drain regions. A plurality of gate structures are arranged over the well region at a regular pitch. A plurality of middle-of-the-line (MOL) structures are laterally interleaved between some of the plurality of gate structures and are arranged over the well region at an irregular pitch having a first pitch that is larger than the regular pitch. Since the MOL structures have an irregular pitch with a first pitch that is larger than the regular pitch, one or more of the plurality of gate structures are spaced apart from a closest gate or MOL structure by a space that reduces parasitic capacitance.

Abstract: A semiconductor structure is disclosed that includes a semiconductor structure includes an active area, a first conductive line, a conductive via, a first conductive metal segment coupled to the conductive line through the conductive via, a second conductive metal segment disposed over the active area, and a local conductive segment configured to couple the first conductive metal segment and the second conductive metal segment.

Abstract: A semiconductor device includes a substrate having source and drain regions, and a channel region arranged between the source and drain regions. The device further includes a gate structure over the substrate and adjacent to the channel region. The gate structure includes a gate stack, a spacer on sidewalls of the gate stack, and a conductor over the gate stack. The device further includes a first contact feature over the substrate and electrically connecting to at least one of the source and drain regions. A top surface of the first contact feature is lower than a top surface of the gate structure. The device further includes a first dielectric layer over the first contact feature. A top surface of the first dielectric layer is below or substantially co-planar with the top surface of the gate structure. The conductor at most partially overlaps in plan view with the first dielectric layer.

Abstract: Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source/drain regions and a channel region between the source/drain regions; a gate structure over the substrate and adjacent to the channel region; source/drain contacts over the source/drain regions and electrically connecting to the source/drain regions; and a contact protection layer over the source/drain contacts. The gate structure includes a gate stack and a spacer. A top surface of the source/drain contacts is lower than a top surface of the spacer, which is substantially co-planar with a top surface of the contact protection layer. The contact protection layer prevents accidental shorts between the gate stack and the source/drain regions when gate vias are formed over the gate stack. Therefore, gate vias may be formed over any portion of the gate stack, even in areas that overlap the channel region from a top view.

Abstract: A clock gating circuit includes a first transistor, a first inverter and a second transistor. A first terminal of the first transistor receives a clock input signal. A second terminal of the first transistor is coupled to a first node. The first transistor adjusts a voltage of the first node to a first voltage based on the clock input signal. The first inverter is coupled to the first node and receives the voltage of the first node, and outputs a clock output signal. A first terminal of the second transistor receives the clock input signal. A second terminal of the second transistor is coupled to the first node and a second node. The second transistor adjusts the voltage of the first node or the second node to the second voltage, based on the clock input signal.

Abstract: A clock gating circuit includes a first transistor, a first inverter and a second transistor. A first terminal of the first transistor receives a clock input signal. A second terminal of the first transistor is coupled to a first node. The first transistor adjusts a voltage of the first node to a first voltage based on the clock input signal. The first inverter is coupled to the first node and receives the voltage of the first node, and outputs a clock output signal. A first terminal of the second transistor receives the clock input signal. A second terminal of the second transistor is coupled to the first node and a second node. The second transistor adjusts the voltage of the first node or the second node to the second voltage, based on the clock input signal.

Abstract: Clock gating circuits may include: a first inverter; a first switch having a first terminal and a second terminal, the first terminal of the first switch coupled to an output of the first inverter; a feedback circuit having an input-output terminal, the input-output terminal of the feedback circuit coupled to the second terminal of the first switch; and a first logic gate having a first input terminal and a second input terminal, the first input terminal coupled to the input-output terminal of the feedback circuit, the second input terminal electrically connected to receive a master clock signal.

Abstract: Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source/drain regions and a channel region between the source/drain regions; a gate structure over the substrate and adjacent to the channel region; source/drain contacts over the source/drain regions and electrically connecting to the source/drain regions; and a contact protection layer over the source/drain contacts. The gate structure includes a gate stack and a spacer. A top surface of the source/drain contacts is lower than a top surface of the spacer, which is substantially co-planar with a top surface of the contact protection layer. The contact protection layer prevents accidental shorts between the gate stack and the source/drain regions when gate vias are formed over the gate stack. Therefore, gate vias may be formed over any portion of the gate stack, even in areas that overlap the channel region from a top view.