Abstract: A method for fabricating an array substrate includes: forming a first metal layer on a base substrate; forming an insulating layer of a silicon-containing organic material on the first metal layer; forming a second metal layer on the insulating layer; patterning the second metal layer by adopting an oxygen ion etching process to partially cover the insulating layer; and forming a silicon oxide layer, by the oxygen ion etching process, on a surface of the insulating layer not covered by the second metal layer.

Abstract: A fingerprint identification display panel includes: a substrate; a plurality of sub-pixel regions including a plurality of first, second sub-pixel regions. A first driving circuit and a first light-emitting unit electrically connected thereto are sequentially disposed on the substrate and located in the plurality of first sub-pixel regions. A light shielding layer having through holes are disposed on the substrate. A plurality of light detection units are disposed at a side of the light shielding layer adjacent to the substrate, and corresponds to through holes one by one. At least one through hole is disposed in the second sub-pixel region, and a ratio of an area of an orthographic projection of the through hole on the substrate to an area of an orthographic projection of the second sub-pixel region on the substrate is greater than or equal to 30%.

Abstract: The present disclosure teaches semiconductor devices and methods for manufacturing the same. Implementations of the semiconductor device may include: a semiconductor substrate; a semiconductor fin positioned on the semiconductor substrate; and a gate structure positioned on the semiconductor fin, where the gate structure includes a gate dielectric layer on a part of a surface of the semiconductor fin and a gate on the gate dielectric layer; where the gate includes a metal gate layer on the gate dielectric layer and a semiconductor layer on a side surface of at least one side of the metal gate layer; and where the semiconductor layer includes a dopant, where a conductivity type of the dopant is the opposite of a conductivity type of the semiconductor fin. The present disclosure can improve a work function of the device, thereby improving a current characteristic of the device during a working process, reducing the short channel effect (SCE), and lowering a leakage current.

Abstract: The present disclosure provides semiconductor devices and methods for manufacturing same and relates to the field of semiconductor technologies. Some implementations of a method may include: providing a semiconductor structure, where the semiconductor structure includes a substrate, a semiconductor fin having a first conductivity type and disposed on the substrate, and a gate structure covering a part of the semiconductor fin, where the semiconductor fin includes a first part and a second part respectively located on two sides of the gate structure; executing first doping on the first part and the second part of the semiconductor fin, where a dopant from the first doping has a second conductivity type that is opposite to the first conductivity type; and after the first doping is executed, forming a source on the first part of the semiconductor fin and forming a drain on the second part of the semiconductor fin.

Abstract: The present disclosure relates to an OLED display panel, a method for manufacturing the same and a display device. The OLED display panel includes: a substrate; a thin film transistor and a photosensitive device for fingerprint recognition on the substrate; a transparent dielectric layer on the substrate and the thin film transistor; a light-shielding-planarization single layer on the transparent dielectric layer, wherein the light-shielding-planarization single layer has a first hole exposing the transparent dielectric layer, and a projection of the first hole on the substrate overlays with a projection of the photosensitive device on the substrate; and an organic light emitting device on the light-shielding-planarization single layer, wherein the organic light emitting device is connected to a source/drain electrode of the thin film transistor through a second hole penetrating the light-shielding-planarization single layer.

Abstract: A flexible display substrate, a method for manufacturing the same, a flexible display panel, and a flexible display device. The flexible display substrate includes: a flexible base substrate including a bendable region and an unbendable region, the bendable region including a bendable edge and an unbendable edge, the unbendable edge extending in a first direction; and at least one transistor in the bendable region of the flexible base substrate, including a gate electrode, a source region, a drain region, and an active layer, wherein the active layer extends in a direction substantially parallel to the first direction.

Abstract: The present invention is directed toward a monoclonal antibody to fibroblast growth factor receptor 2, a pharmaceutical composition comprising same, and methods of treatment comprising administering such a pharmaceutical composition to a patient.

Abstract: A semiconductor device may include a semiconductor substrate. The semiconductor device may further include a gate electrode that overlaps the semiconductor substrate. The semiconductor device may further include a channel region that overlaps at least one of the gate electrode and the semiconductor substrate. The semiconductor device may further include a stress adjustment element that contacts the channel region and is positioned between the channel region and a surface of the semiconductor substrate in a direction perpendicular to the surface of the semiconductor substrate. A maximum width of the channel region in a direction parallel to the surface of the semiconductor substrate is greater than a maximum width of the stress adjustment element in the direction parallel to the surface of the semiconductor substrate in a cross-sectional view of the semiconductor device.

Abstract: Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming a dummy gate structure over the base substrate; forming source/drain regions having source/drain doping ions in the base substrate at both sides of the dummy gate structure; forming a dielectric layer on the source/drain regions and covering the side surfaces of the dummy gate structure; removing the dummy gate structure to form an opening in the dielectric layer; performing one or more of a first ion implantation process, for implanting first barrier ions in the base substrate toward the source region to form a first barrier layer under the opening, and a second ion implantation process, for implanting second barrier ions in the base substrate toward the source region to form a second barrier layer under the opening; and forming a gate structure in the opening.

Abstract: The present invention relates to a method and apparatus for controlling power distribution by a control system that only requires a broadcast medium between a controller (30) and appliances or loads (20-1 to 20-n) and information about the current total power consumption of the system to precisely reach a target consumption level in a stepwise, fast converging way without “seesaw” effects and with “fair distribution” of any power reduction.

Abstract: A semiconductor device may include a semiconductor substrate. The semiconductor device may further include a gate electrode that overlaps the semiconductor substrate. The semiconductor device may further include a channel region that overlaps at least one of the gate electrode and the semiconductor substrate. The semiconductor device may further include a stress adjustment element that contacts the channel region and is positioned between the channel region and a surface of the semiconductor substrate in a direction perpendicular to the surface of the semiconductor substrate. A maximum width of the channel region in a direction parallel to the surface of the semiconductor substrate is greater than a maximum width of the stress adjustment element in the direction parallel to the surface of the semiconductor substrate in a cross-sectional view of the semiconductor device.

Abstract: The present disclosure discloses a manufacturing method of organic light emitting device, and the steps of the manufacturing method comprises: manufacturing a bottom electrode on a base substrate; manufacturing an organic electro-emitting assembly on the bottom electrode by evaporation techniques and lithography techniques; and manufacturing a top electrode on the organic electro-emitting assembly. An organic light emitting device manufactured by the aforementioned method is further disclosed in the present invention. Hole transport layers corresponded to every emitting layers is manufactured by lithography technologies in the present disclosure; therefore, no fine metal mask is needed in use to reduce production cost and time; furthermore, properties of the organic light emitting device is increased simultaneously.

Abstract: Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming a dummy gate structure over the base substrate; forming source/drain regions having source/drain doping ions in the base substrate at both sides of the dummy gate structure; forming a dielectric layer on the source/drain regions and covering the side surfaces of the dummy gate structure; removing the dummy gate structure to form an opening in the dielectric layer; performing one or more of a first ion implantation process, for implanting first barrier ions in the base substrate toward the source region to form a first barrier layer under the opening, and a second ion implantation process, for implanting second barrier ions in the base substrate toward the source region to form a second barrier layer under the opening; and forming a gate structure in the opening.

Abstract: The present application provides an anti-OX40 human antibody. In particular, a human antibody specifically binding to OX40 is obtained with yeast display screening, and the affinity of the antibody is improved with affinity maturation. The present application also provides a use of the antibody for the prevention or treatment of tumors.

Abstract: The present invention is directed toward a monoclonal antibody to fibroblast growth factor receptor 2, a pharmaceutical composition comprising same, and methods of treatment comprising administering such a pharmaceutical composition to a patient.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure having a semiconductor substrate and a gate structure on the semiconductor substrate. The gate structure includes a gate dielectric layer on the semiconductor substrate, a gate on the gate dielectric layer, and a spacer layer on opposite sides of the gate. The method also includes etching the semiconductor substrate to form first and second recesses, etching a portion of the spacer layer to expose a surface portion of the semiconductor substrate, and forming a source filling the first recess and a drain filling the second recess. The source (drain) includes a first source (drain) portion in the first (second) recess and a second source (drain) portion on the first source (drain) portion. The second source portion or the second drain portion covers the exposed surface portion of the semiconductor substrate.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; a semiconductor fin on the semiconductor substrate; a gate structure on the semiconductor fin; a first recess and a second recess in the semiconductor fin and respectively at two sides of the gate structure; a diffusion barrier layer located at a bottom portion and a side wall of at least one recess of the first recess and the second recess; and an electrode on the diffusion barrier layer.

Abstract: A method, a base station (BS), and a user terminal are provided for implementing uplink resource indication. The method includes carrying an uplink resource index in an uplink resource grant (UL Grant), in which an uplink resource index corresponds to at least one uplink resource in terms of indication; and sending the UL Grant. The BS includes an index carrying module and an instruction sending module. The user terminal includes an instruction receiving module, an instruction resolving module, and an execution module.

Abstract: Disclosed are a fully human monoclonal antibody specifically binding to a CD137 or an antigen binding portion thereof. On one hand, provided are a CDR/variable region sequence of the antibody and an encoding nucleic acid sequence thereof; on the other hand, provided is a method for treating diseases using the antibody or the antigen binding portion thereof. a fully human monoclonal antibody specifically binding to a CD137 or an antigen binding portion thereof. On one hand, provided are a CDR/variable region sequence of the antibody and an encoding nucleic acid sequence thereof; on the other hand, provided is a method for treating diseases using the antibody or the antigen binding portion thereof.

Abstract: The present disclosure discloses a manufacturing method of organic light emitting device, and the steps of the manufacturing method comprises: manufacturing a bottom electrode on a base substrate; manufacturing an organic electro-emitting assembly on the bottom electrode by evaporation techniques and lithography techniques; and manufacturing a top electrode on the organic electro-emitting assembly. An organic light emitting device manufactured by the aforementioned method is further disclosed in the present invention. Hole transport layers corresponded to every emitting layers is manufactured by lithography technologies in the present disclosure; therefore, no fine metal mask is needed in use to reduce production cost and time; furthermore, properties of the organic light emitting device is increased simultaneously.