Abstract: An integrated circuit for protecting against transient electrical stress events includes a rail clamp device, and a trigger circuit including a resistive-capacitive (RC) filter, a drive circuit including a first inverter stage receiving an input signal from the RC filter, the drive circuit is configured to enable the rail clamp device during a transient electrical stress event, and a stress event detection circuit coupled to the RC filter. The drive circuit includes a configurable activation voltage which is controlled by the stress event detection circuit, wherein the activation voltage is reduced when the transient electrical stress event is detected.

Abstract: An integrated circuit with protection against transient electrical stress events includes a trigger circuit having a first detection circuit coupled to a first supply voltage, a second detection circuit coupled to a second supply voltage, and a rail clamp device. During a first type of electrical stress event, the rail clamp device is activated in response to a first output signal provided by the first detection circuit. During a second type of electrical stress event, the rail clamp device is activated in response to a second output signal provided by the second detection circuit.

Abstract: An integrated circuit includes an I/O pad and a protection device coupled to the I/O pad and a first supply node. A transient event detector includes a latch; a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to a first supply node, and a second current electrode coupled to a data input of the latch, wherein the latch is configured to store an indication that a transient event occurred. An event level sensor includes a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to the protection device, and a second current electrode coupled to a load circuit; a rectifier device coupled between the second current electrode and a capacitor; a second transistor having a control electrode coupled to the capacitor; and an output circuit configured to place a current on a first sense bus proportional to a current through the load circuit.

Abstract: This disclosure describes an approach to create a library of pre-marked circuit element objects and use the pre-marked circuit element object library to design and fabricate an integrated circuit. Each of the circuit element objects are “pre-marked” and include embedded voltage markers having independent pre-assigned voltage values for each terminal in the circuit element object. When a circuit designer inserts a pre-marked circuit element object in a schematic design, the design tool determines whether each of the circuit element object terminal's pre-assigned voltage values match their corresponding nets to which they are connected. When the circuit designer completes the schematic design that includes valid nets throughout the schematic design, the design tool generates a layout design from the schematic design. The design tool, in turn, generates mask layer data from the layout design when the layout design passes verification testing.

Abstract: An integrated circuit including ESD circuitry that is shared among more than one terminal segment of the integrated circuit to discharge current from an ESD event on any of the terminal segments. The shared ESD circuitry includes a clamp circuit that is coupled to power buses of each segment to discharge current from ESD events on each segment. The shared ESD circuitry includes a trigger circuit that is coupled to nodes coupled to terminals of each segment to detect an ESD event on each segment.

Abstract: A transmission gate circuit includes a pass gate and a control circuit and provides High Voltage protection to a flash memory in a characterization mode and a low resistive path with true open-drain functionality in a normal mode. A native NMOSFET in series with the pass gate provides overvoltage protection for additional circuitry. Well biasing, gate tracking and internal node clamping circuits ensure that all of the devices of the pass gate and control circuit operated within safe operational voltage levels. The two modes of operation can be selected by an enable signal. The transmission gate circuit can support up to a 5.5 volts input in a true open drain mode while an input/output supply voltage of 3.3 volts is supplied.

Abstract: A trigger circuit detects a transient voltage increase on an integrated circuit. The trigger circuit controls a conductivity state of a clamping device to limit the transient voltage increase. The trigger circuit comprises a common capacitive element having a capacitive value, wherein a first time value and a second time value are dependent upon the capacitive value of the common capacitive element, the first time value applicable to an unpowered state of the integrated circuit and the second time value applicable to a powered state of the integrated circuit. The first time value and the second time value control a trigger circuit parameter which may include a detection range within which a rate of transient voltage increase causes the trigger circuit to become active or an “on” time upon which an active duration of control of the conductivity state of the clamping device depends.

Abstract: An integrated circuit including ESD circuitry that is shared among more than one terminal segment of the integrated circuit to discharge current from an ESD event on any of the terminal segments. The shared ESD circuitry includes a clamp circuit that is coupled to power buses of each segment to discharge current from ESD events on each segment. The shared ESD circuitry includes a trigger circuit that is coupled to nodes coupled to terminals of each segment to detect an ESD event on each segment.

Abstract: This disclosure describes an approach to create a library of pre-marked circuit element objects and use the pre-marked circuit element object library to design and fabricate an integrated circuit. Each of the circuit element objects are “pre-marked” and include embedded voltage markers having independent pre-assigned voltage values for each terminal in the circuit element object. When a circuit designer inserts a pre-marked circuit element object in a schematic design, the design tool determines whether each of the circuit element object terminal's pre-assigned voltage values match their corresponding nets to which they are connected. When the circuit designer completes the schematic design that includes valid nets throughout the schematic design, the design tool generates a layout design from the schematic design. The design tool, in turn, generates mask layer data from the layout design when the layout design passes verification testing.

Abstract: An integrated circuit electrical protection device includes a semiconductor substrate, and first, second, and third doped regions of a first polarity in the semiconductor substrate. The first and second doped regions are separated from one another by a first body region having a second polarity and the second and third doped regions are separated from one another by a second body region having the second polarity. The first and second polarities are different from one another. A fourth doped region of the second polarity directly abutting and in contact with the third doped region. A first gate structure is formed over the first body region between the first and second doped regions. A second gate structure is formed over the second body region between the second and third doped regions.

Abstract: A tamper detector has tamper detection logic connected to tamper detection ports through a tamper detection interface. A real-time clock (RTC) provides a clock signal and has a battery. A processor is powered by an external power supply in a powered operational mode and has a power-off mode. In a wake-up configuration, a wake-up signal on a specific I/O port awakens the external power supply from the power-off mode to supply power to the RTC and the tamper detection interface when power from the battery is unavailable. The tamper detection ports continue to function despite removal or discharge of the battery without ESD concerns. The specific I/O port optionally may be configured for passive tamper detection.

Abstract: An integrated circuit ESD protection circuit (270) is formed with a combination device consisting of a gated diode (271) and an output buffer MOSFET (272) where the body tie fingers of a first conductivity type (307) are formed in the substrate (301, 302) and isolated from the drain regions of a second conductivity type (310) using a plurality of diode poly fingers (231, 232) which are interleaved with a plurality of poly gate fingers (204, 205) forming the output buffer MOSFET (272).

Abstract: An integrated circuit electrical protection device is disclosed that includes a semiconductor substrate and a plurality of transistor fingers partitioned into a plurality of segments. The segments are distinguished from one another by well-ties spaced apart from each other within a source/drain region that is shared by adjacent segments.

Abstract: A tamper detector has tamper detection logic connected to tamper detection ports through a tamper detection interface. A real-time clock (RTC) provides a clock signal and has a battery. A processor is powered by an external power supply in a powered operational mode and has a power-off mode. In a wake-up configuration, a wake-up signal on a specific I/O port awakens the external power supply from the power-off mode to supply power to the RTC and the tamper detection interface when power from the battery is unavailable. The tamper detection ports continue to function despite removal or discharge of the battery without ESD concerns. The specific I/O port optionally may be configured for passive tamper detection.

Abstract: An integrated circuit electrical protection device is disclosed that includes a semiconductor substrate and a plurality of transistor fingers partitioned into a plurality of segments. The segments are distinguished from one another by well-ties spaced apart from each other within a source/drain region that is shared by adjacent segments.

Abstract: Boosted Electrostatic Discharge (ESD) clamp circuit with high effective holding voltage. In some embodiments, an integrated circuit may include a trigger circuit operably coupled to a first voltage bus and to a reference bus; a diode including an anode terminal operably coupled to a second voltage bus, the second voltage bus distinct from the first voltage bus; a transistor including a gate operably coupled to an output terminal of the trigger circuit, a drain operably coupled to a cathode terminal of the diode, and a source operably coupled to the reference bus; and an input/output (I/O) cell operably coupled to the first voltage bus, the second voltage bus, and the reference bus.

Abstract: A first circuit design is entered in an electronic design automation (EDA) computer system. The first circuit design includes a first feature with a first node. A marker is associated with the first node and represents a voltage associated with the first node as an algebraic expression of a numerical value representing a property of the circuit design. The marker is used to determine if the component of the circuit design violates a design rule.

Abstract: Boosted Electrostatic Discharge (ESD) clamp circuit with high effective holding voltage. In some embodiments, an integrated circuit may include a trigger circuit operably coupled to a first voltage bus and to a reference bus; a diode including an anode terminal operably coupled to a second voltage bus, the second voltage bus distinct from the first voltage bus; a transistor including a gate operably coupled to an output terminal of the trigger circuit, a drain operably coupled to a cathode terminal of the diode, and a source operably coupled to the reference bus; and an input/output (I/O) cell operably coupled to the first voltage bus, the second voltage bus, and the reference bus.

Abstract: An integrated circuit electrical protection device includes a semiconductor substrate, and first, second, and third doped regions of a first polarity in the semiconductor substrate. The first and second doped regions are separated from one another by a first body region having a second polarity and the second and third doped regions are separated from one another by a second body region having the second polarity. The first and second polarities are different from one another. A fourth doped region of the second polarity directly abutting and in contact with the third doped region. A first gate structure is formed over the first body region between the first and second doped regions. A second gate structure is formed over the second body region between the second and third doped regions.

Abstract: A trigger circuit detects a transient voltage increase on an integrated circuit. The trigger circuit controls a conductivity state of a clamping device to limit the transient voltage increase. The trigger circuit comprises a common capacitive element having a capacitive value, wherein a first time value and a second time value are dependent upon the capacitive value of the common capacitive element, the first time value applicable to an unpowered state of the integrated circuit and the second time value applicable to a powered state of the integrated circuit. The first time value and the second time value control a trigger circuit parameter which may include a detection range within which a rate of transient voltage increase causes the trigger circuit to become active or an “on” time upon which an active duration of control of the conductivity state of the clamping device depends.