Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: Conductive apparatus having minimized AC resistance. The conductive apparatus comprises a planar rectangular conductor having top and bottom surfaces, and opposed end surfaces that are smaller in dimension than the top and bottom surfaces. Magnetic material is disposed adjacent to each of the end surfaces of the rectangular conductor that is formed in a "C" shape to provide end caps that are symmetrical and enclose the end surfaces and portions of the top and bottom surfaces to overlap the conductor in its corners. A method of fabricating the conductive apparatus is also disclosed.

Abstract: Frequency regulating apparatus comprising a high power, voltage variable dielectric varactor or capacitor (or ferroelectric voltage variable dielectric capacitor) for use as a control element in the regulation circuit that actively tunes a resonant network to modulate power delivered to a load. The voltage variable dielectric capacitor comprises a substrate having a bottom electrode 33 formed thereon. A dielectric material is disposed on the substrate is a crystallized ceramic material that preferably comprises a barium, strontium, and titanium mixture. A top electrode is disposed on top of the crystallized ceramic material. Methods of fabricating the voltage variable dielectric varactor (capacitor) are also disclosed.

Abstract: An approach that minimizes ground plane effects affecting planar inductors is disclosed. A magnetic disk is inserted between an inductor and a ground plane to isolate the magnetic field of the inductor and preserve its magnetic characteristics. The present invention isolates the inductor from the ground plane to maintain or improve inductor electrical performance. The magnetic material serves to increase the inductance to its original value (prior to adding the ground plane) with only a slight degradation in Q due to an increase in AC resistance. This approach permits development of higher current, higher power printed networks, components and circuits whose circuit designs have decreased volume, weight, and cost.

Abstract: A semiconductor device assembly with a gap to be filled has thermal vias formed in the supporting substrate. After the semiconductor device is connected to the substrate and fill material positioned about the gap to create a seal, a vacuum is drawn through the thermal vias and a pressure applied to the fill material to urge the fill material into the interior of the gap.

Abstract: Circuits for modulating an RF input signal applied to an RF high power amplifier to produce a modulated RF output signal. The present invention employs a VHF power supply or converter with a modulation control circuit that enables the power supply to be pulsed at frequencies commensurate with a radar in which it is employed, for example. Modulation of the high power amplifier is accomplished by applying a pulsed voltage output signal to a DC bias input of the high power amplifier. More particularly, the modulation control circuit receives a logic control signal, generates a pulse control signal in response thereto, and modulates a DC input signal processed by the converter. The VHF converter receives and modulates the DC input signal in response to the pulse control signal to cause the pulsed voltage output signal from the converter to pulse at a rate and duty cycle determined by the logic control signal. The output signal modulates the RF input signal amplified by the RF high power amplifier.