Abstract: An apparatus for processing a wafer, the apparatus comprising: a rotatable chuck for receiving and rotating a wafer; a heating device arranged to heat a wafer received by the rotatable chuck; a plate that is transparent to radiation emitted by the heating device; and a plate holder that holds an outer periphery of the plate, so as to mount the plate in the plate holder; wherein the plate holder is mountable in the apparatus to position the plate between the heating device and a wafer when the wafer is received by the rotatable chuck.

Abstract: Apparatus for processing a wafer-shaped article, the apparatus comprising a support configured to support the wafer-shaped article during a processing operation; wherein: the support comprises a support body and a plurality of gripping pin assemblies adapted and positioned relative to the support body for gripping the wafer-shaped article, wherein each of the gripping pin assemblies is rotatable relative to the support body between a gripping configuration in which the gripping pin assemblies grip the wafer-shaped article, and a non-gripping configuration in which the gripping pin assemblies do not grip the wafer-shaped article; each of the gripping pin assemblies protrudes from a respective hole in the support body; and a sealing member is positioned between at least one of the gripping pin assemblies and the respective hole, the sealing member being configured to restrict infiltration of a processing liquid used in the processing operation into the hole.

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

Abstract: A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.

Abstract: A gas dispenser in a process module for wet processing of wafer-shaped articles is substantially smaller than the article to be processed and is movable laterally of the article as it dispenses inert gas above the article.

Abstract: An apparatus for treating a wafer-shaped article comprises a spin chuck configured to hold a wafer-shaped article of a predetermined diameter in a position wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A treatment assembly is mounted above the upper surface of the spin chuck and underlying a wafer-shaped article when mounted on the spin chuck. The treatment assembly extends parallel to the upper surface from an axis of rotation of the spin chuck radially to a distance that is at least half the predetermined diameter. The spin chuck comprises upwardly projecting gripping pins configured to hold a wafer-shaped article in position, wherein the gripping pins do not pass through the treatment assembly.

Abstract: Apparatus for treating a substrate includes a stationary plate assembly including liquid nozzles to direct liquid at an edge of the substrate during treatment. A chuck assembly includes a chuck body arranged below and radially outside of the stationary plate assembly and rotatable relative to the stationary plate assembly. An edge ring is attached to the chuck body and defines a radially inner surface extending in an axial direction above and below a plane including the substrate. The edge ring is located radially outside of a radially outer edge of the substrate along an entire surface of the edge ring. A plurality of pins is movable between a clamping position to engage the radially outer edge of the substrate and an idle position.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck having a series of contact elements surrounding a wafer-shaped article when mounted on the rotary chuck. A non-rotating plate is positioned interiorly of the series of contact elements. The plate includes a gas supply that is configured to supply gas so as to support a wafer-shaped article without contacting the non-rotating plate according to the Bernoulli principle.

Abstract: A rotary chuck for processing wafer-shaped articles comprises a chuck body having a series of gripping pins that are movable by sliding horizontally and in unison relative to the chuck body from a first position in which the gripping pins are relatively more retracted into the chuck body to a second position in which the gripping pins are relatively more extended from the chuck body and in which the gripping pins are positioned so as to support a wafer-shaped article of a predetermined diameter.

Abstract: An apparatus for treating a wafer-shaped article comprises a spin chuck configured to hold a wafer-shaped article of a predetermined diameter in a position wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A treatment assembly is mounted above the upper surface of the spin chuck and underlying a wafer-shaped article when mounted on the spin chuck. The treatment assembly extends parallel to the upper surface from an axis of rotation of the spin chuck radially to a distance that is at least half the predetermined diameter. The spin chuck comprises upwardly projecting gripping pins configured to hold a wafer-shaped article in position, wherein the gripping pins do not pass through the treatment assembly.

Abstract: A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.

Abstract: A rotary chuck for processing wafer-shaped articles comprises a chuck body having a series of gripping pins that are movable by sliding horizontally and in unison relative to the chuck body from a first position in which the gripping pins are relatively more retracted into the chuck body to a second position in which the gripping pins are relatively more extended from the chuck body and in which the gripping pins are positioned so as to support a wafer-shaped article of a predetermined diameter.

Abstract: An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer shaped article thereon. The rotary chuck includes a peripheral series of pins configured to contact an edge region of a wafer-shaped article. Each of the pins projects upwardly from the rotary chuck, and each of the pins is individually secured to the rotary chuck by a respective connecting mechanism. Any selected one of the pins can be removed from the rotary chuck by disconnecting its corresponding connecting mechanism without removing any structure of the rotary chuck that surrounds any others of the pins.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto.

Abstract: Improved reduction of static charge in spin chucks is achieved by providing one or more pin assemblies which are formed from chemically inert material and which include an electrically conductive inlay.

Abstract: In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, at least one upper nozzle for dispensing a treatment fluid onto an upwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and at least one lower nozzle arm comprising a series of lower nozzles extending from a central region of the spin chuck to a peripheral region of the spin chuck. The series of nozzles comprises a smaller nozzle in a central region of the spin chuck and a larger nozzle in a peripheral region of the spin chuck. In the method according to the invention, a heated liquid is supplied through the series of nozzles so as to supply more heat to peripheral regions of a wafer than to central regions.