Abstract: Three dimensional optical structures are described that can have various integrations between optical devices within and between layers of the optical structure. Optical turning elements can provide optical pathways between layers of optical devices. Methods are described that provide for great versatility on contouring optical materials throughout the optical structure. Various new optical devices are enabled by the improved optical processing approaches.

Abstract: The invention relates to manual shaving razors. Particularly, the present invention relates to a shaving razor with a handle with a shaving razor head at each of opposite ends of the razor handle.

Abstract: A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a selected pressure to the substrate. A compliant pad of selected elastic resistance provides support to the substrate while allowing the substrate to expand during the cleaving process. Bringing the two halves of the tool together also compresses an edge seal against the perimeter of the substrate. A thin tube connected to a high-pressure gas source extends through the edge seal and provides a burst of gas to separate the substrate into at least two sheets. In a further embodiment, the perimeter of the substrate is struck with an edge prior to applying the gas pressure.

Abstract: A method of forming substrates. The method includes providing a donor substrate; and forming a particle accumulation region at a selected depth in the donor substrate. The method includes diffusing a plurality of particles into the particle accumulation region to add stress to the particle accumulation region; and separating a thickness of material above the selected depth in the donor substrate.

Abstract: Structures include a substrate with a release layer on the surface of the substrate and a uniform material over the release layer. The release layer generally includes powders or partly sintered powders. In some embodiments the uniform material is an optical material, which can be a glass. The optical material can be mechanically decoupled fro the substrate such that the optical material is stress free. The release layer can function as a transfer layer for transferring the uniform material to another substrate of separating the uniform material to create a freestanding structure. The release layer can be formed by the deposition of a material with a higher sintering temperature than powders used to form the uniform material. In other embodiments, a heating step is performed to preserve the release layer while consolidating powders on top into the uniform material.

Abstract: An apparatus and method for mixing at least two reactants is taught wherein a first reactant is delivered to a reaction zone through a first annular flow path and a second reactant is delivered to the reaction zone through a second annular flow path. The first and second annular flow paths are concentric with one another and the two reactants intermix with one another in the reaction zone. There is a rotating disc having a surface, defining one boundary of the reaction zone. The flow of the first and second reactants across the rotating disc and through the reaction zone is generally radial and has a residence time in the reaction zone of not more than about 100 msec, and preferably not more than about 50 msec. The reaction zone resides in a main reactor vessel and there is a driven agitator residing in the main reactor vessel to stir the contents thereof.

Abstract: A cleaving tool provides pressurized gas to the edge of a substrate in combination with a sharpened edge to cleave the substrate at a selected interface. The edge of the tool is tapped against the perimeter of a substrate, such as a bonded substrate, and a burst of gas pressure is then applied at approximately the point of contact with the edge of the tool. The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, such as a weakened layer in a donor wafer.

Abstract: The invention relates to manual shaving razors. Particularly, the present invention relates to a shaving razor with a handle with a shaving razor head at each of opposite ends of the razor handle.

Abstract: Gradient index lenses are described that are integrated within a planar optical structure. The gradient index lens is optically coupled to a planar optical waveguide. In some embodiments, the gradient index lens with variation in index-of-refraction n one dimension is within an optical fiber. The optical fiber includes cladding at least along the edges of the central plane of the gradient index lens. Methods for forming the integrated structures are described. Further optical structures involving the gradient index lenses are also described.

Abstract: An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.

Abstract: An apparatus and method for mixing at least two reactants is taught wherein a first reactant is delivered to a reaction zone through a first annular flow path and a second reactant is delivered to the reaction zone through a second annular flow path. The first and second annular flow paths are concentric with one another and the two reactants intermix with one another in the reaction zone. There is a rotating disc having a surface, defining one boundary of the reaction zone. The flow of the first and second reactants across the rotating disc and through the reaction zone is generally radial and has a residence time in the reaction zone of not more than about 100 msec, and preferably not more than about 50 msec. The reaction zone resides in a main reactor vessel and there is a driven agitator residing in the main reactor vessel to stir the contents thereof.

Abstract: An apparatus and method for mixing at least two reactants is taught wherein a first reactant is delivered to a reaction zone through a first annular flow path and a second reactant is delivered to the reaction zone through a second annular flow path. The first and second annular flow paths are concentric with one another and the two reactants intermix with one another in the reaction zone. There is a rotating disc having a surface, defining one boundary of the reaction zone. The flow of the first and second reactants across the rotating disc and through the reaction zone is generally radial and has a residence time in the reaction zone of not more than about 100 msec, and preferably not more than about 50 msec. The reaction zone resides in a main reactor vessel and there is a driven agitator residing in the main reactor vessel to stir the contents thereof.

Abstract: An apparatus and method for mixing at least two reactants is taught wherein a first reactant is delivered to a reaction zone through a first annular flow path and a second reactant is delivered to the reaction zone through a second annular flow path. The first and second annular flow paths are concentric with one another and the two reactants intermix with one another in the reaction zone. There is a rotating disc having a surface, defining one boundary of the reaction zone. The flow of the first and second reactants across the rotating disc and through the reaction zone is generally radial and has a residence time in the reaction zone of not more than about 100 msec, and preferably not more than about 50 msec. The reaction zone resides in a main reactor vessel and there is a driven agitator residing in the main reactor vessel to stir the contents thereof.

Abstract: A wafer processing apparatus and method of processing a wafer utilizing a processing slurry are provided. The wafer processing disk comprises a processing disk body and a plurality of processing teeth secured to the processing disk body. The plurality of processing teeth project from the disk body to define respective processing surfaces. The plurality of processing teeth include at least one pair of spaced adjacent teeth defining a processing channel there between. The processing channel is shaped such that the cross sectional area of the processing channel decreases as a function of its distance from the processing disk body.

Abstract: A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.

Abstract: A cleaving tool provides pressurized gas to the edge of a substrate in combination with a sharpened edge to cleave the substrate at a selected interface. The edge of the tool is tapped against the perimeter of a substrate, such as a bonded substrate, and a burst of gas pressure is then applied at approximately the point of contact with the edge of the tool. The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, such as a weakened layer in a donor wafer.

Abstract: A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.

Abstract: A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor.

Abstract: A cleaving tool provides pressurized gas to the edge of a substrate in combination with a sharpened edge to cleave the substrate at a selected interface. The edge of the tool is tapped against the perimeter of a substrate, such as a bonded substrate, and a burst of gas pressure is then applied at approximately the point of contact with the edge of the tool. The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, such as a weakened layer in a donor wafer.

Abstract: A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor.