Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric material structures for LED packages and related methods are disclosed. Cover structures with predefined color points for LED packages may include multiple lumiphoric material structures that are bonded together and arranged within LED packages. Lumiphoric material structures may include preformed and hardened structures, such as phosphor-in-glass or phosphor-in-ceramic, that are bonded together to form cover structures. Certain lumiphoric material structures include multiple sublayers of varying quantities and/or compositions of lumiphoric materials. Lumiphoric material structures with targeted color points may also be reduced to powder form and mixed within a binder for application in LED packages.

Abstract: Lighting-emitting devices and more particularly light-emitting diode (LED) chips with multiple wavelength emissions and related methods are disclosed. LED chips include separately formed active LED structures that are bonded together to form a single LED chip capable of emitting multiple wavelengths. Each active LED structure may be separately patterned into a number of individual light-emitting junctions such that after bonding, a single LED chip includes multiple light-emitting junctions from multiple active LED structures. Patterns of individual light-emitting junctions may be selected so that when bonded together, emissions from different active LED structures may pass through LED chips with reduced interactions with one another. Certain aspects include vertical and horizontal offset positions for light-emitting junctions formed from different active LED structures.

Abstract: Light-emitting diode (LED) devices and more particularly submount structures in LED devices and related methods are disclosed. Submount structures include submounts with sidewall connectors along perimeter sidewalls that electrically couple chip bonding pads on top submount surfaces to package bonding pads on submount bottom surfaces. LED devices include LED packages, such as chip-scale LED packages, with reduced footprints where electrically conductive paths are provided as one or more metal layers on the perimeter sidewalls. Exemplary methods include various sequences for depositing the sidewall connectors.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

Abstract: Light-emitting diode (LED) devices, and more particularly selectable-color LED chips are disclosed. An exemplary LED chip includes arrangements of p-contacts and an n-contact for a continuous active LED structure that provides selectable injection of current. Various combinations of wavelength conversion elements may be positioned on different regions configured for selectable injection of current so that color mixing in aggregate emissions is controlled by selectively changing current injection across the various regions of the active LED structure. Exemplary LED chip structures and corresponding arrangements of wavelength conversion elements are disclosed for a variety of selectable-color applications.

Abstract: Light-emitting diode (LED) devices and, more particularly, self-folding lead frames in LED packages are disclosed. Exemplary lead frame structures are provided that include relief lines formed in the lead frame structure that, in response to a force being applied to the lead frame structure, for example, when an LED chip is placed on the lead frame structure, cause the lead frame to self-fold into a predefined shape. The self-folding lead frame can provide the LED package with better manipulation of light control from the package itself than conventional lead frames, while simplifying the manufacturing process.

Abstract: Light-emitting diode (LED) components, and more particularly, LED components that have substrates with recessed cavities are disclosed for LED matrix applications. LED matrix applications involve an array of LEDs closely spaced together, resulting in conventional applications, an undesired level of crosstalk where light from one LED chip excites the phosphors and/or epitaxial layers on a neighboring LED chip. The present disclosure describes LED components with recessed cavities on a substrate, where the LED chips can be placed in the cavities, enabling the sidewalls of the cavities to prevent cross-talk between the LED chips in the LED matrix. The recessed cavities in the substrate can be used for flip-chip mounted chips or LED chips with vertical geometry. Additionally, an LED matrix can have recesses with varying depths to enable customized emission patterns.

Abstract: Light-emitting devices, and more particularly, LED chips that have pillars or pillar-like structures for plugged substrates are disclosed. Pillars can be formed of metal that plug into hollow vias of a substrate, enabling the LED chip to have electrical contact with a submount on which the substrate is mounted. The pillars can facilitate easier mounting of the LED chips to the submount in a surface mount device (SMD) context. The pillars can also serve as alignment pins to improve the die attach process. The substrate can include back-side metal contacts to facilitate the electrical contact between the pillars and the submount. In other embodiments, the hollow vias can extend all the way through the substrate allowing the pillars to make direct electrical contact with the submount.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly microparticle arrangements in LED packages are disclosed. Microparticles and corresponding microparticle layers are structured to internally recirculate light received from an LED chip and/or a recipient lumiphoric material layer to promote increased color mixing and color over angle uniformity. Microparticles are structured with particle sizes that exceed wavelengths of light provided by LED chips and/or lumiphoric materials to elicit internal recirculating of light. Arrangements and/or particle sizes of microparticles are disclosed that tailor light recycling and color mixing to various applications with targeted emission patterns. Related methods include forming microparticles and corresponding microparticle layers before encapsulants of LED packages.

Abstract: Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly identification markers for LED packages and related methods are disclosed. Identification markers may include materials incorporated within LED packages that are transparent in a visible spectrum but detectable when illuminated with light outside the visible spectrum. When radiated with light outside the visible spectrum, identification markers may provide light in the visible spectrum. Alternatively, identification markers may provide light outside the visible spectrum that is detectable with equipment capable of detecting nonvisible light. Identification markers are generally configured to not be readily visible under inspection as a way to make LED packages more difficult for copying in counterfeit products.

Abstract: Solid-state lighting devices and more particularly infrared light-emitting diodes (LEDs) with filter structures are disclosed. Filter structures include long-pass filters configured to pass wavelength-converted light while reflecting light from underlying LED chips. Filter structures further include various dual band-pass filters and multiple band-pass filters in combination with long-pass filters that provide targeted emissions in specific infrared wavelength bands. Filter structures may be provided as part of cover structures over LED chips as various multiple-layer dielectric layer sequences. Infrared light-absorbing particles may be provided in combination with filter structures to provide further targeted emissions.

Abstract: Light-emitting diode (LED) devices and more particularly LED chips with optically pumped quantum well structures are disclosed. LED chips include electrically pumped quantum well structures positioned proximate p-n junctions, and optically pumped quantum well structures positioned to receive photons of light generated by the electrically pumped quantum well structures and re-emit light having longer peak wavelengths. Aggregate emissions may include broader emission spectrums. Moreover, aggregate emissions may predominately be provided by light from the electrically pumped quantum well structures while light from the optically pumped quantum well structures may provide wavelengths that appear brighter to the human eye to increase luminous flux.

Abstract: Light-emitting diode (LED) devices and more particularly coefficient of thermal expansion (CTE) structures in submounts of LEDs are disclosed. Thermal expansion structures include arrangements of vias within submounts that provide variable CTE values across submount surfaces and/or within thicknesses of submounts. Vias may comprise air-filled vias and/or vias filled with various materials that provide variable CTE values. Vias may further be formed with variable thicknesses within submounts to further tailor CTE values. Submounts may include flexible submounts adept for mounting to irregular surfaces with vias structure to provide CTE compensation. Further aspects are described in the context of chip-scale packaging.

Abstract: Light-emitting diode (LED) devices and more particularly lens structures in multiple-chip LED packages are disclosed. Lens structures include separate lenses positioned to reduce optical decoupling from corresponding LED chips. Individual lenses for each individual LED chip provide flexibility in tailoring each lens to provide a portion of aggregate emissions with a targeted profile. Multiple lenses may be integrally formed from a common encapsulant material. Other lens structures include separate lenses provided on or through encapsulant materials. Combinations of different LED chip structures and different lens structures within a common LED package are disclosed.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips with metallic dimming layers and related methods are disclosed. Metallic dimming layers are formed over top surfaces and mesa sidewalls in LED chips to absorb and/or reflect light generated by the LED chips. Resulting LED chips have light outputs that may be reduced in a controlled manner to target various lighting applications where specific brightness levels are targeted. Metallic dimming layers are disclosed that extend past mesa sidewalls without extending all the way to perimeter edges of LED chips. Metallic dimming layers may be embedded within passivation layers for electrical isolation, particularly at the perimeter edges. Related methods are disclosed where LED chips with metallic dimming layers are fabricated with as few as three photolithography steps.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures and related methods are disclosed. LED chip structures include arrangements of current spreading layers and dielectric reflective layers relative to active LED structures. Current spreading layers may be positioned to provide electron path steering toward bulk portions of active LED structures and away from associated mesa sidewalls. Dielectric reflective layers may cover current spreading layers while also extending to cover the mesa sidewalls. Dielectric reflective layers include etch stop layers followed by one or more dielectric layers. The etch stop layers allow over-etching of the dielectric layers to ensure integrity of openings for various electrical interconnects formed through the dielectric reflective layer in related methods. Arrangements of electrical interconnects are also provided that provide tailored current balancing for LED chips.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

Abstract: Light-emitting diode (LED) chips and, more particularly, structures of LED chips with electrically insulating substrates and related methods are disclosed. LED chips include at least one opening that extends through a substrate to provide an electrical pathway to an active LED structure. Another electrical connection may be provided on the active LED structure in a position that forms a vertical contact arrangement. The at least one opening may extend through the substrate and into a portion of the active LED structure to provide increased surface area for the electrical connection. Additional LED chip structures include another opening on the active LED structure that is registered with the opening in the substrate, and electrical connections to a same layer of the active LED structure may be provided within each opening. Related methods include laser drilling the at least one opening in the substrate.

Abstract: A light emitting device comprises a light emitting diode (LED) chip having a dominant wavelength in a range from about 390 nm to about 560 nm, an encapsulant in optical communication with the LED chip, and coated phosphor particles dispersed in the encapsulant. Each of the coated phosphor particles comprises (a) a luminescent particle having a first refractive index at the dominant wavelength, and (b) an optical coating on the luminescent particle, where the optical coating has a second refractive index at the dominant wavelength. The second refractive index is between the first refractive index and a refractive index of the encapsulant at the dominant wavelength.