Abstract: Light-emitting devices including solid-state light-emitting devices, light-emitting diode (LED) devices, and LED packages with support elements for improved near-field and far-field emissions are disclosed. LED chips may be mounted to support elements in a manner that directs light through the support elements in desired emission directions. Support elements include optical structures that spread and mix light laterally within the support element. Optical structures include various light-altering layers, such as light-diffusing layers or light-reflective layers, that are arranged to effectively increase internal reflections for lateral spreading of light. Patterned arrangements of light-altering layers include portions that mask direct emissions for LED chips, thereby redistributing emissions laterally to increase near-field and/or far-field uniformity across an increased portion of emitting surfaces.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and, more particularly, reflectors for support structures in LED packages are disclosed. Support structures include arrangements of dielectric reflectors relative to LED chips and electrically conductive traces that are patterned on a submount. Dielectric reflectors include multiple dielectric layer structures that form a distributed Bragg reflector or, in some instances, an aperiodic Bragg reflector. Such dielectric reflectors may be arranged one or more of the electrically conductive traces and on portions of the submount uncovered by the electrically conducive traces to provide increased reflectivity across a variety of wavelengths provided by LED chips, including wavelengths in the ultraviolet spectrum.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

Abstract: Light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures include arrangements of one or more contacts, interconnects, contact structures, and/or reflective layers that effectively route electrically conductive paths while also reducing instances of closely spaced electrically charged metals of opposing polarities. Certain LED chip structures include electrically isolated metal-containing layers in various chip locations that allow for the presence of n-contact interconnects that are vertically arranged under or proximate to a p-contact. Certain contact structures include various arrangements, including segmented contact structures, that extend laterally to electrically couple groups of n-contact interconnects across various LED chip portions.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Light-emitting devices and more particularly wafer level fabrication for multiple chip light-emitting devices is disclosed. Light-emitting devices include certain LED package structures, such as LED chips, submounts, and electrical connections that are formed by wafer level fabrication before individual light-emitting devices are separated. Methods include joining LED wafers with multiple LED chips formed thereon to submount wafers that include corresponding metallization patterns, followed by separating individual light-emitting devices. Each light-emitting device includes arrays of LED chips that are already bonded to a submount with electrical connections. The arrays of LED chips may be electrically coupled in a variety of electrical configurations based on arrangements of the metallization patterns.

Abstract: Light-emitting diode (LED) packages, and more particularly broad electromagnetic spectrum LED packages are disclosed. Individual LED packages are disclosed that are capable of emitting various combinations of peak wavelengths across a broad electromagnetic spectrum, including one or more combinations of ultraviolet, visible, and infrared peak wavelengths. Such LED packages may also be broadly tunable across portions of the electromagnetic spectrum ranging from ultraviolet to infrared wavelengths. By providing such capabilities within a single light source provided by a single LED package, larger and more complex systems for broadband emissions that include multiple light sources, complex optical systems, mirrors, filters, and additional components may be avoided. LED chip arrangements, control schemes, and encapsulant arrangements are also disclosed for such broad electromagnetic spectrum LED packages.

Abstract: Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly light-extraction features for LED chips and related methods are disclosed. Light-extraction features include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. Dimensions include certain height to width ratios for various substrate thicknesses. Additional light-extraction features with smaller dimensions may be formed along portions or side surfaces of larger light-extraction features.

Abstract: Methods and related systems for transfer of semiconductor die and more particularly for mass transfer of semiconductor die, such as light-emitting diodes, using transfer elements are disclosed. Certain aspects relate to methods of continuous mass transfer using roller feed loops. Two carrier bars move in opposite directions, one with die and one with a substrate. The die stick to a roller and transfer from a die carrier to the substrate on a substrate carrier. In certain aspects, transfer elements may include rollers, flexible rollers, or expandable rollers. Transfer elements may further include alignment features, such as alignment pockets, that provide enhanced die alignment. In certain aspects, transfer elements may include one or more planar surfaces that rotate positions relative to the die carrier and the substrate carrier.

Abstract: A light emitting device comprises a light emitting diode (LED) chip having a dominant wavelength in a range from about 390 nm to about 560 nm, an encapsulant in optical communication with the LED chip, and coated phosphor particles dispersed in the encapsulant. Each of the coated phosphor particles comprises (a) a luminescent particle having a first refractive index at the dominant wavelength, and (b) an optical coating on the luminescent particle, where the optical coating has a second refractive index at the dominant wavelength. The second refractive index is between the first refractive index and a refractive index of the encapsulant at the dominant wavelength.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current spreading layer structures for LED chips are disclosed. LED chips include active LED structures with current spreading layer arrangements relative to reflective structures that provide efficient current injection into the active LED structures while also providing improved light extraction. Current spreading layers include openings that allow portions of dielectric reflector layers to form interfaces with active LED structures adjacent the current spreading layers. Metal reflector layers are provided on the dielectric reflector layers, and reflective layer interconnects are formed through the dielectric reflector layers to contact portions of the current spreading layer.

Abstract: Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly passivation structures for LED chips are disclosed. LED chips include active LED structures, typically formed of epitaxial semiconductor layers, that include mesas with mesa sidewalls. Passivation structures include a passivation layer that bounds the mesa sidewalls. The passivation layer includes a material that is robust to etchants of active LED structures when forming the mesas to reduce damage in underlying portions of the LED chip. The passivation layer effectively forms a seal along the mesa sidewalls that reduces unwanted undercutting or erosion during etching, thereby providing improved reliability, reduced moisture ingress, and the flexibility to enable additional chip structures, such as light extraction features.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips with interconnect structures are disclosed. LED chips are provided that include first interconnects electrically coupled to an n-type layer and second interconnects electrically connected to a p-type layer. Configurations of the first and second interconnects are provided that may improve current spreading by reducing localized areas of current crowding within LED chips. Various configurations are disclosed that include collectively formed symmetric patterns of the first and second interconnects, diameters of certain ones of either the first or second interconnects that vary based on their relative positions in LED chips, and spacings of the second interconnects that vary based on their distances from the first interconnects. In this regard, LED chips are disclosed with improved current spreading as well as higher lumen outputs and efficiencies.

Abstract: Light-emitting diode (LED) chips and, more particularly, structures of LED chips with electrically insulating substrates and related methods are disclosed. LED chips include at least one opening that extends through a substrate to provide an electrical pathway to an active LED structure. Another electrical connection may be provided on the active LED structure in a position that forms a vertical contact arrangement. The at least one opening may extend through the substrate and into a portion of the active LED structure to provide increased surface area for the electrical connection. Additional LED chip structures include another opening on the active LED structure that is registered with the opening in the substrate, and electrical connections to a same layer of the active LED structure may be provided within each opening. Related methods include laser drilling the at least one opening in the substrate.

Abstract: Light-emitting diodes (LEDs), and more particularly contact structures of LED chips for improved current injection are disclosed. Exemplary LED chips include an n-contact structure that forms part of a cathode connection. N-contact structures are provided that form a grid structure that is electrically coupled at an n-type layer across the LED chip so that current is coupled to and spread along the n-type layer. N-contact structures are provided that reside along streets formed between active LED structure mesas. N-contact structures are provided that are embedded within one or more layers of an LED chip, including reflective layers and/or dielectric layers. By providing such n-contact structures along the n-type layer, increased contact between the n-type layer and the n-contact structure may promote improved current spreading and/or current injection while also providing increased thermal spreading in LED chips.

Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.

Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.