Abstract: Light-emitting diode (LED) chips and, more particularly, LED chips with light extraction films and related methods are disclosed. Light extraction films include antireflective structures that are integrated within LED chip structures. Antireflective structures include one or more antireflective layers positioned to reduce internal reflections at various internal interfaces of LED chips. Certain LED chip structures include antireflective structures positioned between epitaxially grown active LED structures and carrier substrates on which the active LED structures are supported. Wafer level bonding sequences with one or more bonding layers are disclosed that facilitate integration of antireflective structures within LED chip structures.

Abstract: Semiconductor devices and more particularly multiple junction light-emitting diode (LED) chips and related methods are disclosed. LED chips include multiple active LED structures that are bonded together. The active LED structures may be vertically bonded within the LED chip. Bonding layers are provided between active LED structures with sufficient thicknesses to maintain mechanical integrity within the LED chip. Bonding layers may be formed of electrically insulating materials with electrically conductive vias formed therethrough to provide electrically conductive paths between active LED structures. Active LED structures may be connected in series for high voltage applications. Emissions from the active LED structures may have same emission colors, multiple distinct emission colors, and/or variations in peak wavelengths within a same color range.

Abstract: Solid-state lighting devices, and more particularly, wire grid polarization structure for current spreading and polarization control for light emitting diode (LED) package, and a method for making the same are disclosed. The wire grid polarization structure can be configured to both polarize light emitted by an LED chip of the LED package as well as spread current on a layer of the LED chip, resulting in more even light emission across the LED chip. The wire grid polarization structure can be formed on a top surface of the LED chip, and be electrically coupled to an electrode to spread the current across the top surface of the LED chip. In an embodiment, the wire grid polarization structure can include interdigitated fingers that are coupled to both an anode and an electrode.

Abstract: Semiconductor devices and more particularly mounting structures for edge-emitting semiconductor devices are disclosed. Exemplary edge-emitting semiconductor devices include light-emitting diode (LED) edge emitters. Mounting structures include submounts with recesses configured to receive edge-emitting semiconductor devices such that emitting edges are positioned toward desired emission directions. Submount recesses are disclosed that include corresponding electrical connections for edge-emitting semiconductor devices. Multiple edge-emitting semiconductor devices are mechanically supported and electrically connected within a single recess or with multiple recesses. Corresponding devices are disclosed that include arrays of edge-emitting semiconductor devices in one or more recesses.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current injection structures for LED chips are disclosed. Current injection structures include integrated layers or materials with high work functions as part of contact structures for epitaxial layers of active LED structures. Exemplary structures provide high work function contact layers for p-type epitaxial layers to enhance hole mobility and transport. Further contact structures include combinations of high work function layers with other current spreading layers. Exemplary materials for high work function layers include transition metal oxides.

Abstract: Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

Abstract: Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact interconnect structures for LED chips and related methods are disclosed. Contact interconnect structures include arrangements of contact plugs and various interconnect segments that provide electrical connections to certain layers of active LED structures. Exemplary interconnect structures include contact plugs at interfaces of the active LED structure for facilitating ohmic contact behavior, followed by multiple interconnect segments that extend through one or more insulating layers of LED chips. By providing multiple interconnect segments, materials used for the overall interconnect structure may be positionally varied. Interconnect segments proximate the contact plug may have a same material as metal reflective layers used in other parts of the LED chip for increased reflectivity and improved reliability.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: A LED chip has integrated capacitor and inductor structures, wherein a capacitor structure is coupled to an active LED structure of the LED chip, the inductor structure is coupled to the capacitor structure, and the inductor structure is configured to harvest power from an externally supplied radio frequency (RF) signal. At least portions of the inductor and capacitor are arranged in or on ceramic passivation material. A LED chip may have a footprint of no greater than 2.5 mm×2.5 mm, and/or a top area of no greater than 6.25 mm2. A resistor element or memristor element may be coupled between the capacitor structure and the active region. Methods of fabricating such LED chips are also provided.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly material arrangements in cover structures for LEDs that tailor light emissions are disclosed. Material arrangements include light-filtering particles or ionic species that are integrated within materials of covers structures that cover LED chips within LED packages. Light-filtering materials may be configured to selectively filter one or more portions of light provided by LED chips and/or lumiphoric materials within LED packages. Dispersing light-filtering materials within covers structures provides protection and mechanical support for the light-filtering materials. Additionally, arrangements and concentrations of light-filtering materials within cover structures may be varied horizontally and/or vertically to tailor emission patterns of corresponding LED packages. Material arrangements include light-filtering species incorporated at an atomic level within cover structures.

Abstract: Lighting-emitting devices and more particularly light-emitting diode (LED) chips with multiple wavelength emissions and related methods are disclosed. LED chips include separately formed active LED structures that are bonded together to form a single LED chip capable of emitting multiple wavelengths. Each active LED structure may be separately patterned into a number of individual light-emitting junctions such that after bonding, a single LED chip includes multiple light-emitting junctions from multiple active LED structures. Patterns of individual light-emitting junctions may be selected so that when bonded together, emissions from different active LED structures may pass through LED chips with reduced interactions with one another. Certain aspects include vertical and horizontal offset positions for light-emitting junctions formed from different active LED structures.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric particle structures in wavelength conversion elements for LEDs and related methods are disclosed. Lumiphoric particle structures include coatings that provide improved optical, mechanical, and/or thermal characteristics when distributed within host materials of wavelength conversion elements. Coatings are pre-formed on lumiphoric particles before the lumiphoric particles are integrated with wavelength conversion elements. Heat treatments associated with firing wavelength conversion elements may diffuse coating materials within wavelength conversion elements to form graded material structures for further improvements to optical, mechanical, and/or thermal characteristics.

Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions.

Abstract: The present disclosure relates to solid-state lighting devices including light-emitting diodes (LEDs) and more particularly to light-extraction features for LED chips and packages and methods of forming the light-extraction features on a cover structure over the LED chip to improve light extraction from the LED chip. A number of sublayers that are embedded with lumiphoric materials can be pressed in a mold that includes texturing that imprints the light-extraction features in the sublayers. The sublayers can then be baked to form a cover structure that can be placed over the LED chip. In other embodiments, the sublayers can be baked to form the cover structure, which can then be heated to above a transition temperature of the cover structure, then pressed in a textured mold to form the light-extraction features, and then placed over the LED chip.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

Abstract: Lumiphoric materials and corresponding light-emitting devices, and more particularly localized surface plasmon resonance for enhanced photoluminescence of lumiphoric materials are disclosed. Plasmonic materials are disclosed that are configured to induce localized surface plasmon resonance and excite a corresponding localized surface plasmon enhanced electric field in response to incident light. An increase in photoluminescence of lumiphoric materials may be realized when the lumiphoric materials are arranged within the localized surface plasmon enhanced electric field. Plasmonic materials are disclosed that include various arrangements of nanoparticles and/or patterned structures with corresponding dielectric materials that are collectively arranged in close proximity to lumiphoric materials.